Self-regulating casing treatment for axial compressor stability enhancement

The operating range of an axial compressor is often restricted by a safety imposed stall margin. One possible way of regaining operating range is with the application of casing treatment. Of particular interest here is the type of casing treatment which extracts air from a high pressure location in the compressor and re-injects it through discrete loops into the rotor tip region. Existing re-circulation systems have the disadvantage of reducing compressor efficiency at design conditions because worked flow is unnecessarily re-circulated at these operating conditions. Re-circulation is really only needed near stall. This paper proposes a self-regulating casing treatment in which the re-circulated flow is minimized at compressor design conditions and maximized near stall. The self-regulating capability is achieved by taking advantage of changes which occur in the tip clearance velocity and pressure fields as the compressor is throttled toward stall. In the proof-of-concept work reported here, flow is extracted from the high pressure region over the rotor tips and re-injected just upstream of the same blade row. Parametric studies are reported in which the flow extraction and re-injection ports are optimized for location, shape and orientation. The optimized design is shown to compare favorably with a circumferential groove tested in the same compressor. The relationship between stall inception type and casing treatment effectiveness is also investigated. The self-regulating aspect of the new design works well: stall margin improvements from 2.2 to 6.0% are achieved for just 0.25% total air re-circulated near stall and half that near design conditions. The self-regulating capability is achieved by the selective location and orientation of the extraction hole; a simple model is discussed which predicts the optimum axial location. Copyright © 2011 by ASME.

Switching speed enhancement of the LDMOSFETs using partial-SOI technology

To overcome reduced breakdown voltage and self-heating effects inherent in silicon-on-insulator (SOI) power integrated circuits while still maintaining good isolation between low power CMOS circuits and the high power cells, partial SOI (PSOI) technology has been proposed. PSOI devices make use of both buried oxide and substrate depletion to support the breakdown voltage. 2D analyses and modeling of parasitic capacitances in PSOI structures show that PSOI-lightly doped MOSFETs can increase the switching speed by as much as four times compared to conventional SOI structures, making them very attractive for high switching applications.