Formation of silicon-on-insulator layers by electron beam recrystallization

This paper outlines the development of the electron beam recrystallization approach to the formation of silicon-on-insulator layers. The technique of recrystallizing seeded layers by a line electron beam has been widely adopted. Present practice in electron beam recrystallization is reviewed, both from materials and process points of view. Applications of silicon-on-insulator substrates formed in this way are described, particularly in three-dimensional integration. © 1988.