Market-pull and technology-push in manufacturing start-ups in emerging industries

Purpose - As traditional manufacturing, previously vital to the UK economy, is increasingly outsourced to lower-cost locations, policy makers seek leadership in emerging industries by encouraging innovative start-up firms to pursue competitive opportunities. Emerging industries can either be those where a technology exists but the corresponding downstream value chain is unclear, or a new technology may subvert the existing value chain to satisfy existing customer needs. Hence, this area shows evidence of both technology-push and market-pull forces. The purpose of this paper is to focus on market-pull and technology-push orientations in manufacturing ventures, specifically examining how and why this orientation shifts during the firm's formative years. Design/methodology/approach - A multiple case study approach of 25 UK start-ups in emerging industries is used to examine this seldom explored area. The authors offer two models of dynamic business-orientation in start-ups and explain the common reasons for shifts in orientation and why these two orientations do not generally co-exist during early firm development. Findings - Separate evolution paths were found for strategic orientation in manufacturing start-ups and separate reasons for them to shift in their early development. Technology-push start-ups often changed to a market-pull orientation because of new partners, new market information or shift in management priorities. In contrast, many of the start-ups beginning with a market-pull orientation shifted to a technology-push orientation because early market experiences necessitated a focus on improving processes in order to increase productivity or meet partner specifications, or meet a demand for complementary products. Originality/value - While a significant body of work exists regarding manufacturing strategy in established firms, little work has been found that investigates how manufacturing strategy emerges in start-up companies, particularly those in emerging industries. © Emerald Group Publishing Limited.

Liquid crystalline chromophores for photonic band-edge laser devices

We present results on laser action from liquid crystal compounds whereby one sub-unit of the molecular structure consists of the cyano-substituted chromophore, {phenylene-bis (2-cyanopropene)}, similar to the basic unit of the semiconducting polymer structure poly(cyanoterephthalylidene). These compounds were found to exhibit nematic liquid crystal phases. In addition, by virtue of the liquid crystalline properties, the compounds were found to be highly miscible in wide temperature range commercial nematogen mixtures. When optically excited at λ = 355 nm, laser emission was observed in the blue/green region of the visible spectrum (480-530 nm) and at larger concentrations by weight than is achievable using conventional laser dyes. Upon increasing the concentration of dye from 2 to 5 wt.% the threshold was found to increase from Eth = 0.42 ± 0.02 μJ/pulse (≈20 mJ/cm2) to Eth = 0.66 ± 0.03 μJ/pulse (≈34 mJ/cm2). Laser emission was also observed at concentrations of 10 wt.% but was less stable than that observed for lower concentrations of the chromophore. © 2012 Elsevier B.V. All rights reserved.

The fracture energy of metal fibre reinforced ceramic composites (MFCs)

A model is presented for prediction of the fracture energy of ceramic-matrix composites containing dispersed metallic fibres. It is assumed that the work of fracture comes entirely from pull-out and/or plastic deformation of fibres bridging the crack plane. Comparisons are presented between these predictions and experimental measurements made on a commercially-available composite material of this type, containing stainless steel (304) fibres in a matrix predominantly comprising alumina and alumino-silicate phases. Good agreement is observed, and it's noted that there is scope for the fracture energy levels to be high (~20kJm-2). Higher toughness levels are both predicted and observed for coarser fibres, up to a practical limit for the fibre diameter of the order of 0.5mm. Other deductions are also made concerning strategies for optimisation of the toughness of this type of material. © 2010 Elsevier Ltd.

First-principles prediction of doped graphane as a high-temperature electron-phonon superconductor.

We predict by first-principles calculations that p-doped graphane is an electron-phonon superconductor with a critical temperature above the boiling point of liquid nitrogen. The unique strength of the chemical bonds between carbon atoms and the large density of electronic states at the Fermi energy arising from the reduced dimensionality give rise to a giant Kohn anomaly in the optical phonon dispersions and push the superconducting critical temperature above 90 K. As evidence of graphane was recently reported, and doping of related materials such as graphene, diamond, and carbon nanostructures is well established, superconducting graphane may be feasible.

The effect of shape on the adhesion of fibrillar surfaces.

Experimental data have demonstrated that mushroom-shaped fibrils adhere much better to smooth substrates than punch-shaped fibrils. We present a model that suggests that detachment processes for such fibrils are controlled by defects in the contact area that are confined to its outer edge. Stress analysis of the adhered fibril, carried out for both punch and mushroom shapes with and without friction, suggests that defects near the edge of the adhesion area are much more damaging to the pull-off strength in the case of the punch than for the mushroom. The simulations show that the punch has a higher driving force for extension of small edge defects compared with the mushroom adhesion. The ratio of the pull-off force for the mushroom to that of the punch can be predicted from these simulations to be much greater than 20 in the friction-free case, similar to the experimental value. In the case of sticking friction, a ratio of 14 can be deduced. Our analysis also offers a possible explanation for the evolution of asymmetric mushroom shapes (spatulae) in the adhesion organ of geckos.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.

Algorithm-based continuous pulse duration tuning and performance control of a mode-locked laser diode.

A control algorithm is presented that addresses the stability issues inherent to the operation of monolithic mode-locked laser diodes. It enables a continuous pulse duration tuning without any onset of Q-switching instabilities. A demonstration of the algorithm performance is presented for two radically different laser diode geometries and continuous pulse duration tuning between 0.5 ps to 2.2 ps and 1.2 ps to 10.2 ps is achieved. With practical applications in mind, this algorithm also facilitates control over performance parameters such as output power and wavelength during pulse duration tuning. The developed algorithm enables the user to harness the operational flexibility from such a laser with 'push-button' simplicity.

Auto-calibration of a camera system using Image Alignment

Calibration of a camera system is a necessary step in any stereo metric process. It correlates all cameras to a common coordinate system by measuring the intrinsic and extrinsic parameters of each camera. Currently, manual calibration of a camera system is the only way to achieve calibration in civil engineering operations that require stereo metric processes (photogrammetry, videogrammetry, vision based asset tracking, etc). This type of calibration however is time-consuming and labor-intensive. Furthermore, in civil engineering operations, camera systems are exposed to open, busy sites. In these conditions, the position of presumably stationary cameras can easily be changed due to external factors such as wind, vibrations or due to an unintentional push/touch from personnel on site. In such cases manual calibration must be repeated. In order to address this issue, several self-calibration algorithms have been proposed. These algorithms use Projective Geometry, Absolute Conic and Kruppa Equations and variations of these to produce processes that achieve calibration. However, most of these methods do not consider all constraints of a camera system such as camera intrinsic constraints, scene constraints, camera motion or varying camera intrinsic properties. This paper presents a novel method that takes all constraints into consideration to auto-calibrate cameras using an image alignment algorithm originally meant for vision based tracking. In this method, image frames are taken from cameras. These frames are used to calculate the fundamental matrix that gives epipolar constraints. Intrinsic and extrinsic properties of cameras are acquired from this calculation. Test results are presented in this paper with recommendations for further improvement.

700V smart trench IGBT with monolithic over-voltage and over-current protecting functions

An advanced 700V Smart Trench IGBT with monolithically integrated over-voltage and over-current protecting circuits is presented in this paper. The proposed Smart IGBT comprises a sense IGBT, a low voltage lateral n-channel MOSFET (M 1), an avalanche diode (D av), and poly-crystalline Zener diodes (ZD) and resistor (R poly). Mix-mode transient simulations with MEDICI have proven the functionalities of the protecting circuits when the device is operating under abnormal conditions, such as Unclamped Inductive Switching (UIS) and Short Circuit (SC) condition. A Trench IGBT process is used to fabricate this device with total 11 masks including one metal mask only. The characterizations of the fabricated device exhibit the clamping capability of the avalanche diode and voltage pull-down ability of the MOSFET. © 2012 IEEE.