Application of a laminar flamelet model to confined explosion hazards

The majority of computational studies of confined explosion hazards apply simple and inaccurate combustion models, requiring ad hoc corrections to obtain realistic flame shapes and often predicting an order of magnitude error in the overpressures. This work describes the application of a laminar flamelet model to a series of two-dimensional test cases. The model is computationally efficient applying an algebraic expression to calculate the flame surface area, an empirical correlation for the laminar flame speed and a novel unstructured, solution adaptive numerical grid system which allows important features of the solution to be resolved close to the flame. Accurate flame shapes are predicted, the correct burning rate is predicted near the walls, and an improvement in the predicted overpressures is obtained. However, in these fully turbulent calculations the overpressures are still too high and the flame arrival times too low, indicating the need for a model for the early laminar burning phase. Due to the computational expense, it is unrealistic to model a laminar flame in the complex geometries involved and therefore a pragmatic approach is employed which constrains the flame to propagate at the laminar flame speed. Transition to turbulent burning occurs at a specified turbulent Reynolds number. With the laminar phase model included, the predicted flame arrival times increase significantly, but are still too low. However, this has no significant effect on the overpressures, which are predicted accurately for a baffled channel test case where rapid transition occurs once the flame reaches the first pair of baffles. In a channel with obstacles on the centreline, transition is more gradual and the accuracy of the predicted overpressures is reduced. However, although the accuracy is still less than desirable in some cases, it is much better than the order of magnitude error previously expected.

A discretized proportional base driver for Silicon Carbide Bipolar Junction Transistors

Silicon Carbide Bipolar Junction Transistors require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200V/40A SiC BJT in a DC-DC boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 63 %. The total reduction of the driver consumption is 2816 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.

A discretized proportional base driver for silicon carbide bipolar junction transistors

Silicon carbide (SiC) bipolar junction transistors (BJTs) require a continuous base current in the on-state. This base current is usually made constant and is corresponding to the maximum collector current and maximum junction temperature that is foreseen in a certain application. In this paper, a discretized proportional base driver is proposed which will reduce, for the right application, the steady-state power consumption of the base driver. The operation of the proposed base driver has been verified experimentally, driving a 1200-V/40-A SiC BJT in a dc-dc boost converter. In order to determine the potential reduction of the power consumption of the base driver, a case with a dc-dc converter in an ideal electric vehicle driving the new European drive cycle has been investigated. It is found that the steady-state power consumption of the base driver can be reduced by approximately 60%. The total reduction of the driver consumption is 3459 J during the drive cycle, which is slightly more than the total on-state losses for the SiC BJTs used in the converter. © 2013 IEEE.