76 resultados para privileges prevail over UCPR pleading rules

em Cambridge University Engineering Department Publications Database


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One of the key technologies to evolve in the displays market in recent years is liquid crystal over silicon (LCOS) microdisplays. Traditional LCOS devices and applications such as rear projection televisions, have been based on intensity modulation electro-optical effects, however, recent developments have shown that multi-level phase modulation from these devices is extremely sought after for applications such as holographic projectors, optical correlators and adaptive optics. Here, we propose alternative device geometry based on the flexoelectric-optic effect in a chiral nematic liquid crystal. This device is capable of delivering a multilevel phase shift at response times less than 100 microsec which has been verified by phase shift interferometry using an LCOS test device. The flexoelectric on silicon device, due to its remarkable characteristics, enables the next generation of holographic devices to be realized.

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The Chinese language is based on characters which are syllabic in nature. Since languages have syllabotactic rules which govern the construction of syllables and their allowed sequences, Chinese character sequence models can be used as a first level approximation of allowed syllable sequences. N-gram character sequence models were trained on 4.3 billion characters. Characters are used as a first level recognition unit with multiple pronunciations per character. For comparison the CU-HTK Mandarin word based system was used to recognize words which were then converted to character sequences. The character only system error rates for one best recognition were slightly worse than word based character recognition. However combining the two systems using log-linear combination gives better results than either system separately. An equally weighted combination gave consistent CER gains of 0.1-0.2% absolute over the word based standard system. Copyright © 2009 ISCA.

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Experiments with N//2O were carried out with a view to obtaining additional information about the reactivity of oxygen surface species. On clean Ag, N//2O decomposition was found to be an activated process which led exclusively to the deposition of O(a) species. The presence of preadsorbed oxygen or subsurface oxygen served to enhance the deposition rate of O(a). Subsequent dosing with ethylene at 300 K of such an oxygen-populated surface followed by TPR examination showed it to be active for ethylene oxide formation. Control experiments established that adventitious decomposition of N//2O at the reactor walls or specimen supports followed by possible re-absorption of O//2(a) was an entirely negligible process. ) The oxidation activity of N//2O was also investigated at elevated pressures in the batch reactor.