Visualization of turbulent wedges under favourable pressure gradients using both shear-sensitive and temperature-sensitive liquid crystals

Turbulent wedges induced by a 3D surface roughness placed in a laminar boundary layer over a flat plate were visualised for the first time using both shear-sensitive and temperature-sensitive liquid crystals. The experiments were carried out at three different levels of favourable pressure gradients. The purpose of this investigation was to examine the spreading angles of the turbulent wedges indicated by their associated surface shear stresses and heat transfer characteristics and hence obtain further insight about the difference in the behaviour of transitional momentum and thermal boundary layers when a streamwise pressure gradient exists. It was shown that under a zero pressure gradient the spreading angles indicated by the two types of liquid crystals are the same, but the difference increases as the level of favourable pressure gradient increases. The result from the present study could have an important implication to the transition modelling of thermal boundary layers over gas turbine blades.

Polarization and temperature dependence of photoluminescence from zincblende and wurtzite InP nanowires

We use polarization-resolved and temperature-dependent photoluminescence of single zincblende (ZB) (cubic) and wurtzite (WZ) (hexagonal) InP nanowires to probe differences in selection rules and bandgaps between these two semiconductor nanostructures. The WZ nanowires exhibit a bandgap 80 meV higher in energy than the ZB nanowires. The temperature dependence of the PL is similar but not identical for the WZ and ZB nanowires. We find that ZB nanowires exhibit strong polarization parallel to the nanowire axis, while the WZ nanowires exhibit polarized emission perpendicular to the nanowire axis. This behavior is interpreted in terms of the different selection rules for WZ and ZB crystal structures. © 2007 American Institute of Physics.

Electroluminescence analysis and simulation of the effects of injection and temperature on carrier distribution in InGaN-based light-emitting diodes with color-coded quantum wells

This paper reports on an extensive analysis of the electroluminescence characteristics of InGaN-based LEDs with color-coded structure, i.e., with a triple quantum well structure in which each quantum well has a different indium content. The analysis is based on combined electroluminescence measurements and two-dimensional simulations, carried out at different current and temperature levels. Results indicate that (i) the efficiency of each of the quantum wells strongly depends on device operating conditions (current and temperature); (ii) at low current and temperature levels, only the quantum well closer to the p-side has a significant emission; (iii) emission from the other quantum wells is favored at high current levels. The role of carrier injection, hole mobility, carrier density and non-radiative recombination in determining the relative intensity of the quantum wells is discussed in the text. © 2013 The Japan Society of Applied Physics.