Transient thermal analysis of power devices based on Fourier-series thermal model

A new thermal model based on Fourier series expansion method has been presented for dynamic thermal analysis on power devices. The thermal model based on the Fourier series method has been programmed in MATLAB SIMULINK and integrated with a physics-based electrical model previously reported. The model was verified for accuracy using a two-dimensional Fourier model and a two-dimensional finite difference model for comparison. To validate this thermal model, experiments using a 600V 50A IGBT module switching an inductive load, has been completed under high frequency operation. The result of the thermal measurement shows an excellent match with the simulated temperature variations and temperature time-response within the power module. ©2008 IEEE.

Vibration of fluid loaded conical shells.

An analytical model is presented to describe the vibration of a truncated conical shell with fluid loading in the low frequency range. The solution for the dynamic response of the shell is presented in the form of a power series. Fluid loading is taken into account by dividing the shell into narrow strips which are considered to be locally cylindrical. Analytical results are presented for different boundary conditions and have been compared with the computational results from a boundary element model. Limitations of the model to the low frequency range are discussed.

Vibrations of coupled cylindrical-conical shells

The free vibrational characteristics of coupled conical-cylindrical shells is presented. The equations of motion for the cylindrical shell are solved using a wave approach while the equations of motion for the conical shells are solved using a power series solution. The use of both Donnell-Mushtari and Flügge equations of motion are investigated and their limitations are discussed. Results are presented in terms of natural frequencies for different boundary conditions and the purely torsional mode solution is described. The results from the analytical model presented are compared with those obtained from a finite element model solved with Nastran and other data available in literature.

Microwave power effects on the properties of phosphorus-doped SiC:H films prepared using ECR-CVD

There has been a growing interest in hydrogenated silicon carbide films (SiC:H) prepared using the electron cyclotron resonance-chemical vapour deposition (ECR-CVD) technique. Using the ECR-CVD technique, SiC:H films have been prepared from a mixture of methane, silane and hydrogen, with phosphine as the doping gas. The effects of changes in the microwave power (from 150 to 900 W) on the film properties were investigated in a series of phosphorus-doped SiC:H films. In particular, the changes in the deposition rate, optical bandgap, activation energy and conductivity were investigated in conjunction with results from Raman scattering and Fourier transform infra-red (FTIR) analysis. It was found that increase in the microwave power has the effect of enhancing the formation of the silicon microcrystalline phase in the amorphous matrix of the SiC:H films. This occurs in correspondence to a rapid increase in the conductivity and a reduction in the activation energy, both of which exhibit small variations in samples deposited at microwave powers exceeding 500 W. Analysis of IR absorption results suggests that hydrogen is bonded to silicon in the Si-H stretching mode and to carbon in the sp3 CHn rocking/wagging and bending mode in films deposited at higher microwave powers.