Solid-state memories based on ferroelectric tunnel junctions.

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10(6) A cm(-2)). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10(4) A cm(-2) at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism.

Solid-state memories based on ferroelectric tunnel junctions

Ferroic-order parameters are useful as state variables in non-volatile information storage media because they show a hysteretic dependence on their electric or magnetic field. Coupling ferroics with quantum-mechanical tunnelling allows a simple and fast readout of the stored information through the influence of ferroic orders on the tunnel current. For example, data in magnetic random-access memories are stored in the relative alignment of two ferromagnetic electrodes separated by a non-magnetic tunnel barrier, and data readout is accomplished by a tunnel current measurement. However, such devices based on tunnel magnetoresistance typically exhibit OFF/ON ratios of less than 4, and require high powers for write operations (>1 × 10 6 A cm -2). Here, we report non-volatile memories with OFF/ON ratios as high as 100 and write powers as low as ∼1 × 10 4A cm -2 at room temperature by storing data in the electric polarization direction of a ferroelectric tunnel barrier. The junctions show large, stable, reproducible and reliable tunnel electroresistance, with resistance switching occurring at the coercive voltage of ferroelectric switching. These ferroelectric devices emerge as an alternative to other resistive memories, and have the advantage of not being based on voltage-induced migration of matter at the nanoscale, but on a purely electronic mechanism. © 2012 Macmillan Publishers Limited. All rights reserved.

Programmable ZnO nanowire transistors using switchable polarization of ferroelectric liquid crystal

We demonstrate modulations of electrical conductance and hysteresis behavior in ZnO nanowire transistors via electrically polarized switching of ferroelectric liquid crystal (FLC). After coating a nanowire channel in the transistors with FLCs, we observed large increases in channel conductance and hysteresis width, and a strong dependence of hysteresis loops on the polarization states associated with the orientation of electric dipole moments along the direction of the gate electric field. Furthermore, the reversible switching and retention characteristics provide the feasibility of creating a hybrid system with switch and memory functions. © 2013 American Institute of Physics.

Fast Hands-free Writing by Gaze Direction

We describe a method for text entry based on inverse arithmetic coding that relies on gaze direction and which is faster and more accurate than using an on-screen keyboard. These benefits are derived from two innovations: the writing task is matched to the capabilities of the eye, and a language model is used to make predictable words and phrases easier to write.

Liquid crystal based continuous phase retarder: From optically neutral to a quarter waveplate in 200 microseconds

Liquid crystal variable phase retarders have been incorporated into prototype devices for optical communications system applications, both as endless polarization controllers 1,2,3, and as holographic beam steerers 4. Nematic liquid crystals allow continuous control of the degree of retardation induced at relatively slow switching speeds, while ferroelectric liquid crystal based devices allow fast (sub millisecond) switching, but only between two bistable states. The flexoelectro-optic effect 5,6 in short-pitch chiral nematic liquid crystals allows both fast switching of the optic axis and continuous, electric field dependent control of the degree of rotation of the optic axis. A novel geometry for the flexoelectro-optic effect is presented here, in which the helical axis of the chiral nematic is perpendicular to the cell walls (grandjean texture) and the electric field is applied in the plane of the cell. This facilitates deflection of the optic axis of the uniaxial negatively birefringent material from lying along the direction of propagation to having some component in the polarization plane of the light. The device is therefore optically neutral at zero field for telecommunications wavelengths (1550nm), and allows a continuously variable degree of phase excursion to be induced, up to 2π/3 radians achieved so far in a 40μm thick cell. The retardation has been shown both to appear, on application of the field, and disappear on removal, at speeds of 100-500 μs. The direction of deflection of the optic axis is also dependent on the direction of the field, allowing the possibility, in a converging electrode "cartwheel cell", of endless rotation of the liquid crystal waveplate at a higher rate than achievable through dielectric coupling to plain nematic materials.