Bimesogenic liquid crystals: New materials for high performance flexoelectric and blue phase displays

In this paper we will describe new bimesogenic nematic liquid crystals that have high flexoelectro-optic coefficients (e/K),of the order of 1.5 CN 1 m-1, high switching angles, up to 100° and fast response times, of the order of 100μs or less. We will describe devices constructed, using the ULH texture that may be switched to the optimum angle of 45° for a birefringence based device with the fields of 4Vμm-1 over a wide temperature range. Such devices use an "in plane" optical switching mode, have gray scale capability and a wide viewing angle. We will describe devices using the USH or Grandjean texture that have an optically isotropic "field off" black state, uses "in plane" switching E fields, to give an induced birefringence phase device, with switching times of the order of 20μs. We will briefly describe new highly reflective Blue Phase devices stable over a 50V temperature range in which an electric field is used to switch the reflection from red to green, for example. Full RGB reflections may be obtained with switching times of a few milliseconds. Finally we will briefly mention potential applications including high efficiency RGB liquid crystal laser sources. © 2006 SID.

Durability and photo-electric characteristics of a mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film

A mille-feuille structured amorphous selenium (a-Se)-arsenic selenide (As2Se3) multi-layered thin film and a mixed amorphous Se-As2Se3 film is compared from a durability perspective and photo-electric perspective. The former is durable to incident laser induced degradation after numerous laser scans and does not crystallise till 105 of annealing, both of which are improved properties from the mixed evaporated film. In terms of photo-electric properties, the ratio between the photocurrent and the dark current improved whereas the increase of the dark current was higher than that of As2Se3 due to the unique current path developed within the mille-feuille structure. Implementing this structure into various amorphous semiconductors may open up a new possibility towards structure-sensitive amorphous photoconductors. © 2013 Elsevier B.V.

Light induced instability mechanism in amorphous InGaZn oxide semiconductors

A model of the negative bias illumination stress instability in InGaZn oxide is presented, based on the photo-excitation of electrons from oxygen interstitials. The O interstitials are present to compensate hydrogen donors. The O interstitials are found to spontaneously form in O-rich conditions for Fermi energies at the conduction band edge, much more easily that in related oxides. The excited electrons give rise to a persistent photoconductivity due to an energy barrier to recombination. The formation energy of the O interstitials varies with their separation from the H donors, which leads to a voltage stress dependence on the compensation. © 2014 AIP Publishing LLC.