Partial soi power LDMOS with a variable low-kappa; Dielectric buried layer and a buried P layer

A power LDMOS on partial silicon on insulator (PSOI) with a variable low-κ dielectric (VLKD) buried layer and a buried p (BP) layer is proposed (VLKD BPSOI). At a low κ value, the electric field strength in the buried dielectric (EI) is enhanced, and a Si window makes the substrate share the vertical voltage drop, leading to a high vertical breakdown voltage (BV). Moreover, three interface field peaks are introduced by the BP, the Si window, and the VLKD, which modulate the fields in the SOI layer, the VLKD layer, and the substrate; consequently, a high BV is obtained. Furthermore, the BP reduces the specific on-resistance (Ron), and the Si window alleviates the self-heating effect (SHE). The BV for VLKD BPSOI is enhanced by 34.5%, and Ron is decreased by 26.6%, compared with those for the conventional PSOI, and VLKD BPSOI also maintains a low SHE. © 2006 IEEE.

Efficient topological localization using orientation adjacency coherence histograms

This paper describes an efficient vision-based global topological localization approach that uses a coarse-to-fine strategy. Orientation Adjacency Coherence Histogram (OACH), a novel image feature, is proposed to improve the coarse localization. The coarse localization results are taken as inputs for the fine localization which is carried out by matching Harris-Laplace interest points characterized by the SIFT descriptor. Computation of OACHs and interest points is efficient due to the fact that these features are computed in an integrated process. We have implemented and tested the localization system in real environments. The experimental results demonstrate that our approach is efficient and reliable in both indoor and outdoor environments. © 2006 IEEE.