Low-cost PCB-integrated 10-Gb/s optical transceiver built with a novel integration method

A novel integration method for the production of cost-effective optoelectronic printed circuit boards (OE PCBs) is presented. The proposed integration method allows fabrication of OE PCBs with manufacturing processes common to the electronics industry while enabling direct attachment of electronic components onto the board with solder reflow processes as well as board assembly with automated pick-and-place tools. The OE PCB design is based on the use of polymer multimode waveguides, end-fired optical coupling schemes, and simple electro-optic connectors, eliminating the need for additional optical components in the optical layer, such as micro-mirrors and micro-lenses. A proof-of-concept low-cost optical transceiver produced with the proposed integration method is presented. This transceiver is fabricated on a low-cost FR4 substrate, comprises a polymer Y-splitter together with the electronic circuitry of the transmitter and receiver modules and achieves error-free 10-Gb/s bidirectional data transmission. Theoretical studies on the optical coupling efficiencies and alignment tolerances achieved with the employed end-fired coupling schemes are presented while experimental results on the optical transmission characteristics, frequency response, and data transmission performance of the integrated optical links are reported. The demonstrated optoelectronic unit can be used as a front-end optical network unit in short-reach datacommunication links. © 2011-2012 IEEE.

Quantum dots and nanowires for optoelectronic device applications

InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour deposition on GaAs (100) and (111)B substrates, respectively. InGaAs QD lasers were fabricated and characterised. Results show ground-state lasing at about 1150 nm in devices with lengths greater than 2.5 mm. We also observed a strong influence of nanowire density on nanowire height specific to nanowires with high indium composition. This dependency was attributed to the large difference of diffusion length on (111)B surfaces between In and Ga reaction species, with In being the more mobile species. Selective area epitaxy for applications in quantum-dot optoelectronic device integration is also discussed in this paper. ©2006 IEEE.

Network integration for international mergers and Acquisitions

Business activities are increasingly taking place across geographical and ownership boundaries. Post-Merger & Acquisition Integration (PMI) processes are more challenging in network organisations due to the extra complexity and interdependency associated with networks. However, network integration issues are not well addressed in the traditional M&A literature or the network organisation literature. Based on ten in-depth case studies across key industry sectors, this research identifies the essential network integration issues for international M&As with a configuration concept, and demonstrates different network integration patterns according to M&A objectives for growth and efficiency. This paper extends the theoretical understanding of PMI for network organisations. It can also provide practical guidance for managers to assess the feasibility of an M&A transition or to go through the PMI process successfully. Copyright © 2010 Inderscience Enterprises Ltd.

A comparative study of plasma-enhanced chemical vapor gate dielectrics for solution-processed polymer thin-film transistor circuit integration

This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

Integration of holographic sensors into microfluidics for the real-time pH sensing of L. casei metabolism

We describe developments in the integration of analyte specific holographic sensors into PDMS-based microfluidic devices for the purpose of continuous, low-impact monitoring of extra-cellular change in micro-bioreactors. Holographic sensors respond to analyte concentration via volume change, which makes their reduction in size and integration into spatially confined fluidics difficult. Through design and process modification many of these constraints have been addressed, and a microfluidics-based device capable of real-time monitoring of the pH change caused by Lactobacillus casei fermentation is presented as a general proof-of-concept for a wide array of possible devices.

Laser micromachining of thin films for optoelectronic devices and packages

Focused laser micromachining in an optical microscope system is used to prototype packages for optoelectronic devices and to investigate new materials with potential applications in packaging. Micromachined thin films are proposed as mechanical components to locate fibres and other optical and electrical components on opto-assemblies. This paper reports prototype structures which are micromachined in silicon carbide to produce beams 5 μm thick by (i) laser cutting a track in a SiC coated Si wafer, (ii) undercutting by anisotropic silicon etching using KOH in water, and (iii) trimming if necessary with the laser system. This approach has the advantage of fast turn around and proof of concept. Mechanical test data are obtained from the prototype SiC beam package structures by testing with a stylus profilometer. The Youngs modulus obtained for chemical vapour deposited silicon carbide is 360 +/- 50 GPa indicating that it is a promising material for packaging applications.