Nanoscale plasmonic memristor with optical readout functionality.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.

Optimization of efficiency-loss figure of merit in carrier-depletion silicon Mach-Zehnder optical modulator.

In this paper we study the optimization of interleaved Mach-Zehnder silicon carrier depletion electro-optic modulator. Following the simulation results we demonstrate a phase shifter with the lowest figure of merit (modulation efficiency multiplied by the loss per unit length) 6.7 V-dB. This result was achieved by reducing the junction width to 200 nm along the phase-shifter and optimizing the doping levels of the PN junction for operation in nearly fully depleted mode. The demonstrated low FOM is the result of both low V(π)L of ~0.78 Vcm (at reverse bias of 1V), and low free carrier loss (~6.6 dB/cm for zero bias). Our simulation results indicate that additional improvement in performance may be achieved by further reducing the junction width followed by increasing the doping levels.

Low loss and low crosstalk multimode polymer waveguide crossings for high-speed optical interconnects

Multimode polymer waveguide crossings exhibiting the lowest reported excess loss of 0.006dB/crossing and crosstalk values as low as -30dB are presented. Their potential for use in high-speed dense optical interconnection architectures is demonstrated. © 2007 Optical Society of America.

Calculation of the electronic structure of carbon films using electron energy loss spectroscopy.

The detailed understanding of the electronic properties of carbon-based materials requires the determination of their electronic structure and more precisely the calculation of their joint density of states (JDOS) and dielectric constant. Low electron energy loss spectroscopy (EELS) provides a continuous spectrum which represents all the excitations of the electrons within the material with energies ranging between zero and about 100 eV. Therefore, EELS is potentially more powerful than conventional optical spectroscopy which has an intrinsic upper information limit of about 6 eV due to absorption of light from the optical components of the system or the ambient. However, when analysing EELS data, the extraction of the single scattered data needed for Kramers Kronig calculations is subject to the deconvolution of the zero loss peak from the raw data. This procedure is particularly critical when attempting to study the near-bandgap region of materials with a bandgap below 1.5 eV. In this paper, we have calculated the electronic properties of three widely studied carbon materials; namely amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C) and C60 fullerite crystal. The JDOS curve starts from zero for energy values below the bandgap and then starts to rise with a rate depending on whether the material has a direct or an indirect bandgap. Extrapolating a fit to the data immediately above the bandgap in the stronger energy loss region was used to get an accurate value for the bandgap energy and to determine whether the bandgap is direct or indirect in character. Particular problems relating to the extraction of the single scattered data for these materials are also addressed. The ta-C and C60 fullerite materials are found to be direct bandgap-like semiconductors having a bandgaps of 2.63 and 1.59eV, respectively. On the other hand, the electronic structure of a-C was unobtainable because it had such a small bandgap that most of the information is contained in the first 1.2 eV of the spectrum, which is a region removed during the zero loss deconvolution.

Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.

Wavelength conversion using semiconductor optical amplifiers

This paper reports a detailed theoretical study of the dynamics of wavelength conversion using cross-gain and cross-phase modulation in semiconductor optical amplifiers (SOA's) involving a large signal, multisection rate equation model. Using this model, recently reported experimental results have been correctly predicted and the effects of electrical and optical pumping on the conversion speed, modulation index, and phase variation of the converted signal have been considered. The model predicts, in agreement with experimental data, that recovery rates as low as 12 ps are possible if signal and pump powers in excess of 14 dBm are used. It also indicates that conversion speeds up to 40 Gb/s may be achieved with less than 3 dB dynamic penalty. The employment of cross-phase modulation increases the speed allowing, for example, an improvement to 60 Gb/s with an excess loss penalty less than 1 dB.

Efficient InGaAsP/InP multiple quantum well optical phase modulator for the 1.5-1.55μm fiber band

We report an InGaAsP/InP MQW phase modulator operating over the entire 1.55μm fiber band with high phase modulation efficiency and low loss modulation. The spectral dependence of the electro-refraction in a MQW structure is measured for the first time.

Numerical modelling of dynamic response of loss modulated monolithic multisection mode-locked semiconductor lasers

Monolithic multisection mode-locked semiconductor lasers with an integrated distributed Bragg reflector (DBR) have recently been demonstrated to generate stable picosecond pulses at high repetition rates suitable for optical communication systems. However, there has been very little theoretical work on understanding the physical mechanisms of the device and on optimisation of the absorber modulator design. This article presents numerical modeling of the loss modulated mode-locking process in these lasers. The model predicts most aspects experimentally observed within this type of device, and the results show the output waveform, optical spectrum, instantaneous frequency chirp, and stable operating range.

Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Improved transmission performance of adaptively modulated optical OFDM signals over directly modulated DFB laser-based IMDD links using adaptive cyclic prefix.

The impact of Adaptive Cyclic Prefix (ACP) on the transmission performance of Adaptively Modulated Optical OFDM (AMOOFDM) is explored thoroughly in directly modulated DFB laser-based, IMDD links involving Multimode Fibres (MMFs)/Single-Mode Fibres (SMFs). Three ACP mechanisms are identified, each of which can, depending upon the link properties, affect significantly the AMOOFDM transmission performance. In comparison with AMOOFDM having a fixed cyclic prefix duration of 25%, AMOOFDM with ACP can not only improve the transmission capacity by a factor of >2 (>1.3) for >1000 m MMFs (<80 km SMFs) with 1 dB link loss margin enhancement, but also relax considerably the requirement on the DFB bandwidth.

Cost-effective 10 Gb/s polymer-based chip-to-chip optical interconnect

Board-level optical links are an attractive alternative to their electrical counterparts as they provide higher bandwidth and lower power consumption at high data rates. However, on-board optical technology has to be cost-effective to be commercially deployed. This study presents a chip-to-chip optical interconnect formed on an optoelectronic printed circuit board that uses a simple optical coupling scheme, cost-effective materials and is compatible with well-established manufacturing processes common to the electronics industry. Details of the link architecture, modelling studies of the link's frequency response, characterisation of optical coupling efficiencies and dynamic performance studies of this proof-of-concept chip-to-chip optical interconnect are reported. The fully assembled link exhibits a -3 dBe bandwidth of 9 GHz and -3 dBo tolerances to transverse component misalignments of ±25 and ±37 μm at the input and output waveguide interfaces, respectively. The link has a total insertion loss of 6 dBo and achieves error-free transmission at a 10 Gb/s data rate with a power margin of 11.6 dBo for a bit-error-rate of 10 -12. The proposed architecture demonstrates an integration approach for high-speed board-level chip-to-chip optical links that emphasises component simplicity and manufacturability crucial to the migration of such technology into real-world commercial systems. © 2012 The Institution of Engineering and Technology.

Ferroelectric liquid crystal mixture integrated into optical waveguides

We report an on-chip integrated ferroelectric liquid crystal (FLC) waveguide structure suitable for telecommunication applications. Single gaps with different widths of 5, 10, and 20 μ m inside individual silica waveguides were filled with an FLC mixture. The waveguide devices operate as a binary switch or an attenuator in a temperature range from 30 °C to 60 °C. The FLC mixture exhibited a good alignment quality in these gaps without alignment layers. A good extinction ratio of up to 33.9 dB and a low insertion loss of <4.3 dB at λ = 1550 nm were observed. Switching times of <100 μs were obtained for the low electric fields applied in this experiment. © 2012 IEEE.