Fabrication of test structures for 4×4 InP/InGaAsP integrated optical matrix

A novel optical switching matrix measuring 1×2 mm2 in size is fabricated. The switching matrix is composed of waveguides, four 1×4 multimode interference (MMI) splitters, 32 total internal refraction mirrors and four 4×1 MMI combiners with the extremely compact size of 1×2 mm2. This integrated device are assessed and loss contribution measured from test structure is presented.

Process development on the monolithic fabrication of an ultra-compact 4×4 optical switch matrix on InP/InGaAsP material

We have fabricated an ultra-compact 4×4 optical matrix on InP/InGaAsP material. 1×4 MMI couplers and TIR mirrors are employed to produce a compact 1×2 mm2 device. A CH4/H2/O2 RIE dry etch process has been used to realize two-level dry etching: deep-etch for both the MMI couplers and the mirrors and shallow-etch for the rest of the routing waveguides. It was found that a metal/dielectric bilayer mask is essential for multi-dry-etch processes and high profile verticality. We have found a Ti intermediate mask for the deep-etch process which is removable by SF6 dry-etch before the following shallow process. Dry-etch removal of the intermediate mask is necessary to protect the deep-etched mirror sidewall.

Smooth thin film C/diamond membranes with controllable optical band gaps

Mixed phase carbon-diamond films which consist of small grain diamond in an a:C matrix were deposited on polished Si using a radio frequency CH4 Ar plasma CVD deposition process. Ellipsometry, surface profilometry, scanning electron microscopy (SEM) and spectrophotometry were used to analyse these films. Film thicknesses were typically 50-100 nm with a surface roughness of ± 30 A ̊ over centimetre length scans. SEM analysis showed the films were smooth and pinhole free. The Si substrate was etched using backside masking and a directional etch to give taut carbon-diamond membranes on a Si grid. Spectrophotometry was used to analyse the optical properties of these membranes. Band gap control was achieved by varying the dc bias of the deposition process. Band gaps of 1.2 eV to 4.0 eV were achieved in these membranes. A technique for controlling the compressive stress in the films, which can range from 0.02 to 7.5 GPa has been employed. This has allowed the fabrication of thin, low stress, high band gap membranes that are extremely tough and chemically inert. Such carbon-diamond membranes seem promising for applications as windows in analytical instruments. © 1992.

Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Large port count high-speed optical switch fabric for use within datacenters [Invited]

This paper reviews advances in the technology of integrated semiconductor optical amplifier based photonic switch fabrics, with particular emphasis on their suitability for high performance network switches for use within a datacenter. The key requirements for large port count optical switch fabrics are addressed noting the need for switches with substantial port counts. The design options for a 16×16 port photonic switch fabric architecture are discussed and the choice of a Clos-tree design is described. The control strategy, based on arbitration and scheduling, for an integrated switch fabric is explained. The detailed design and fabrication of the switch is followed by experimental characterization, showing net optical gain and operation at 10 Gb/s with bit error rates lower than 10-9. Finally improvements to the switch are suggested, which should result in 100 Gb/s per port operation at energy efficiencies of 3 pJ/bit. © 2011 Optical Society of America.

Polymer-based board-level optical interconnects

This paper provides an overview of the rationale behind the significant interest in polymer-based on-board optical links together with a brief review of recently reported work addressing certain challenges in this field. Polymer-based optical links have garnered considerable research attention due to their important functional attributes and compelling cost-benefit advantages in on-board optoelectronic systems as they can be cost-effectively integrated on conventional printed circuit boards. To date, significant work on the polymer materials, their fabrication process and their integration on standard board substrates have enabled the demonstration of numerous high-speed on-board optical links. However, to be deployed in real-world systems, these optoelectronic printed circuit boards (OE PCBs) must also be cost-effective. Here, recent advances in the integration process focusing on simple direct end-fire coupling schemes and the use of low-cost FR4 PCB substrates are presented. Performance of two proof-of-principle 10 Gb/s systems based on this integration method are summarised while work in realising more complex yet compact planar optical components is outlined. © 2011 IEEE.

Optical properties of silicon rich oxides

Thermally treated silicon rich oxides (SRO) used as starting material for the fabrication of silicon nanodots represent the basis of tunable bandgap nanostructured materials for optoelectronic and photonic applications. The optical modelization of such materials is of great interest, as it allows the simulation of reflectance and transmittance (R&T) spectra, which is a powerful non destructive tool in the determination of phase modifications (clustering, precipitation of new phases, crystallization) upon thermal treatments. In this paper, we study the optical properties of a variety of as-deposited and furnace annealed SRO materials. The different phases are treated by means of the effective medium approximation. Upon annealing at low temperature, R&T spectra show the precipitation of amorphous silicon nanoparticles, while the crystallization occurring at temperatures higher than 1000 °C is also clearly identified, in agreement with structural results. The existing literature on the optical properties of the silicon nanocrystals is reviewed, with attention on the specificity of the compositional and structural characteristics of the involved material. © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Low-cost PCB-integrated 10-Gb/s optical transceiver built with a novel integration method

A novel integration method for the production of cost-effective optoelectronic printed circuit boards (OE PCBs) is presented. The proposed integration method allows fabrication of OE PCBs with manufacturing processes common to the electronics industry while enabling direct attachment of electronic components onto the board with solder reflow processes as well as board assembly with automated pick-and-place tools. The OE PCB design is based on the use of polymer multimode waveguides, end-fired optical coupling schemes, and simple electro-optic connectors, eliminating the need for additional optical components in the optical layer, such as micro-mirrors and micro-lenses. A proof-of-concept low-cost optical transceiver produced with the proposed integration method is presented. This transceiver is fabricated on a low-cost FR4 substrate, comprises a polymer Y-splitter together with the electronic circuitry of the transmitter and receiver modules and achieves error-free 10-Gb/s bidirectional data transmission. Theoretical studies on the optical coupling efficiencies and alignment tolerances achieved with the employed end-fired coupling schemes are presented while experimental results on the optical transmission characteristics, frequency response, and data transmission performance of the integrated optical links are reported. The demonstrated optoelectronic unit can be used as a front-end optical network unit in short-reach datacommunication links. © 2011-2012 IEEE.

Fabrication of high-aspect-ratio polymer microstructures and hierarchical textures using carbon nanotube composite master molds

Scalable and cost effective patterning of polymer structures and their surface textures is essential to engineer material properties such as liquid wetting and dry adhesion, and to design artificial biological interfaces. Further, fabrication of high-aspect-ratio microstructures often requires controlled deep-etching methods or high-intensity exposure. We demonstrate that carbon nanotube (CNT) composites can be used as master molds for fabrication of high-aspect-ratio polymer microstructures having anisotropic nanoscale textures. The master molds are made by growth of vertically aligned CNT patterns, capillary densification of the CNTs using organic solvents, and capillary-driven infiltration of the CNT structures with SU-8. The composite master structures are then replicated in SU-8 using standard PDMS transfer molding methods. By this process, we fabricated a library of replicas including vertical micro-pillars, honeycomb lattices with sub-micron wall thickness and aspect ratios exceeding 50:1, and microwells with sloped sidewalls. This process enables batch manufacturing of polymer features that capture complex nanoscale shapes and textures, while requiring only optical lithography and conventional thermal processing. © 2011 The Royal Society of Chemistry.

PCB-integrated optical waveguide sensors: An ammonia gas sensor

This paper presents a novel platform for the formation of cost-effective PCB-integrated optical waveguide sensors. The sensor design relies on the use of multimode polymer waveguides that can be formed directly on standard PCBs and commercially-available chemical dyes, enabling the integration of all essential sensor components (electronic, photonic, chemical) on low-cost substrates. Moreover, it enables the detection of multiple analytes from a single device by employing waveguide arrays functionalised with different chemical dyes. The devices can be manufactured with conventional methods of the PCB industry, such as solder-reflow processes and pick-and-place assembly techniques. As a proof of principle, a PCB-integrated ammonia gas sensor is fabricated on a FR4 substrate. The sensor operation relies on the change of the optical transmission characteristics of chemically functionalised optical waveguides in the presence of ammonia molecules. The fabrication and assembly of the sensor unit, as well as fundamental simulation and characterisation studies, are presented. The device achieves a sensitivity of approximately 30 ppm and a linear response up to 600 ppm at room temperature. Finally, the potential to detect multiple analytes from a single device is demonstrated using principal-component analysis. © 1983-2012 IEEE.

Precursor flow rate manipulation for the controlled fabrication of twin-free GaAs nanowires on silicon substrates

Vertically oriented GaAs nanowires (NWs) are grown on Si(111) substrates using metal-organic chemical vapor deposition. Controlled epitaxial growth along the 111 direction is demonstrated following the deposition of thin GaAs buffer layers and the elimination of structural defects, such as twin defects and stacking faults, is found for high growth rates. By systematically manipulating the AsH 3 (group-V) and TMGa (group-III) precursor flow rates, it is found that the TMGa flow rate has the most significant effect on the nanowire quality. After capping the minimal tapering and twin-free GaAs NWs with an AlGaAs shell, long exciton lifetimes (over 700ps) are obtained for high TMGa flow rate samples. It is observed that the Ga adatom concentration significantly affects the growth of GaAs NWs, with a high concentration and rapid growth leading to desirable characteristics for optoelectronic nanowire device applications including improved morphology, crystal structure and optical performance. © 2012 IOP Publishing Ltd.

Compact multimode polymer waveguide bends for board-level optical interconnects

Multimode polymer waveguides are promising for use in board-level optical interconnects. In recent years, various on-board optical interconnection architectures have been demonstrated making use of passive routing waveguide components. In particular, 90° bends have played important roles in complex waveguide layouts enabling interconnection between non co-linear points on a board. Due to the dimensions and index step of the waveguides typically used in on-board optical interconnects, low-loss bends are typically limited to a radius of ∼ 10 mm. This paper therefore presents the design and fabrication of compact low-loss waveguide bends with reduced radii of curvature, offering significant reductions in the required areas for on-board optical circuits. The proposed design relies on the exposure of the bend section to the air, achieving tighter light confinement along the bend and reduced bending losses. Simulation studies carried out with ray tracing tools and experimental results from polymer samples fabricated on FR4 are presented. Low bending losses are achieved from the air-exposed bends up to 4 mm of radius of curvature, while an improvement of 14 μm in the 1 dB alignment tolerances at the input of these devices (fibre to waveguide coupling) is also obtained. Finally, the air-exposed bends are employed in an optical bus structure, offering reductions in insertion loss of up to 3.8 dB. © 2013 IEEE.

Nanoscale plasmonic memristor with optical readout functionality.

We experimentally demonstrate for the first time a nanoscale resistive random access memory (RRAM) electronic device integrated with a plasmonic waveguide providing the functionality of optical readout. The device fabrication is based on silicon on insulator CMOS compatible approach of local oxidation of silicon, which enables the realization of RRAM and low optical loss channel photonic waveguide at the same fabrication step. This plasmonic device operates at telecom wavelength of 1.55 μm and can be used to optically read the logic state of a memory by measuring two distinct levels of optical transmission. The experimental characterization of the device shows optical bistable behavior between these levels of transmission in addition to well-defined hysteresis. We attribute the changes in the optical transmission to the creation of a nanoscale absorbing and scattering metallic filament in the amorphous silicon layer, where the plasmonic mode resides.