Nanometer scale thermal drift of 4Gbit/s uncooled laser for tight-channel-spacing low-cost WDM

A 4Gbit/s directly modulated DBR laser is demonstrated with nanometre scale thermal tuning over an extended 20-70°C temperature range. >40dB side mode suppression over the entire temperature range is achieved. © 2005 Optical Society of America.

A novel heavily doped drift-auxiliary cathode lateral insulated gate transistor structure

A novel CMOS-compatible, heavily doped drift auxiliary cathode lateral insulated gate transistor (HDD-ACLIGT) structure is analyzed using two-dimensional device simulation techniques. Simulation results indicate that low on-resistance and a fast turn-off time of less than 50 ns can be achieved by incorporating an additional n+ region which is self-aligned to the gate between the p+ auxiliary cathode and the p well, together with an extended p buried layer in an anode-shorted modified lateral insulated gate transistor (MLIGT) structure. The on-state and its transient performance are analyzed in detail. The on-state performances of the HDD-ACLIGT and the MLIGT are compared and discussed. The results indicate that the HDD-ACLIGT structure is well suited for HVICs. The device is also well suited for integration with self-aligned digital CMOS.

Investigation of biotin-streptavidin binding interactions using microcantilever sensors

We report the investigation of biotin-streptavidin binding interactions using microcantilever sensors. A symmetric cantilever construction is employed to minimize the effects of thermal drift and the control of surface chemistry on the backside of the cantilever is demonstrated to reduce the effects of non-specific binding interactions on the cantilever. Three structurally different biotin modified cantilever surfaces are used as a model system to study the binding interaction with streptavidin. The cantilever response to the binding of streptavidin on these biotin sensing monolayers is compared. The lowest detection limit of streptavidin using biotin-HPDP is found to be between 1 and 10 nM limited by the optical measurement setup. Surface characterization using quartz crystal microbalance (QCM) and high-resolution atomic force microscope (AFM) is used to benchmark the cantilever sensor response. In addition, the QCM and AFM studies reveal that the surface density of bound streptavidin on biotin modified surfaces was low, thereby implying that effects other than steric hindrance are responsible for defining cantilever response. (c) 2006 Elsevier B.V. All rights reserved.

Directly-modulated DS-DBR tunable laser for uncooled C-band WDM system

A tunable DS-DBR laser is demonstrated for uncooled WDM C-band channel generation with tight spacing (SOGHz) and low thermal drift (±2.5GHz) up to 70°C. 2.5Gb/s direct modulation with transmission over a 75km link is achieved. © 2000 Optical Society of America.

Static and dynamic properties of uncooled 3-section tunable DBR laser

We present for the first time a comprehensive study of the static and dynamic properties of a coolerless tunable three-section DBR laser. Wavelength tuning and thermal drift under uncooled conditions are investigated. Variance of modulation bandwidth with temperature rise and wavelength control is studied, and then verified by uncooled direct modulation performance with clear open eye diagrams. Satisfactory direct modulation is demonstrated at bit rate of up to 6Gbit/s, which is believed to be the fastest out of devices of similar structure so far.

Uncooled DBR laser directly modulated at 3.125 Gb/s as athermal transmitter for low-cost WDM systems

An uncooled three-section tunable distributed Bragg reflector laser is demonstrated as an athermal transmitter for low-cost uncooled wavelength-division-multiplexing (WDM) systems with tight channel spacing. A ±0.02-nm thermal wavelength drift is achieved under continuous-wave operation up to 70 °C. Dynamic sidemode suppression ratio of greater than 35 dB is consistently obtained under 3.125-Gb/s direct modulation over a 20 °C-70 °C temperature range, with wavelength variation of as low as ±0.2 nm. This indicates that more than an order of magnitude reduction in coarse WDM channel spacing is possible using this source. © 2005 IEEE.

Athermal colourless C-band optical transmitter for passive optical networks

A new control algorithm with reduced mode-hopping is demonstrated for uncooled WDM C-band channel generation from a DS-DBR laser with 100GHz spacing and low thermal drift up to 70°C. 10Gb/s external modulation with transmission over a 25km link is achieved. ©2010 IEEE.

Trench MOS-gated power devices

MOS gated power devices are now available for power switching applications with voltage blocking requirements up to 1 kV and current ratings up to 300A. This is due to the invention of the IGBT, a device in which MOS gate turn-on leads to minority carrier injection to modulate the high resistance drift region required for voltage blocking. The paper presents current technologies being developed in order to expand the applications of MOS gated power devices. Also explained is the available trench gate technology that can be used to fabricate power devices.

A study of frequency response in silicon heterojunction bipolar transistors with amorphous silicon emitters

A detailed physical model of amorphous silicon (aSi:H) is incorporated into a twodimensional device simulator to examine the frequency response limits of silicon heterojunction bipolar transistors (HBT's) with aSi:H emitters. The cutoff frequency is severely limited by the transit time in the emitter space charge region, due to the low electron drift mobility in aSi:H, to 98 MHz which compares poorly with the 37 GHz obtained for a silicon homojunction bipolar transistor with the same device structure. The effects of the amorphous heteroemitter material parameters (doping, electron drift mobility, defect density and interface state density) on frequency response are then examined to find the requirements for an amorphous heteroemitter material such that the HBT has better frequency response than the equivalent homojunction bipolar transistor. We find that an electron drift mobility of at least 100 cnr'V"'"1 is required in the amorphous heteroemitter and at a heteroemitter drift mobility of 350 cm2 · V1· s1 and heteroemitter doping of 5×1017 cm3, a maximum cutoff frequency of 52 GHz can be expected. © 1996 IEEE.