Fertile-free annular fuel for plutonium recycling

Up to 50% increase in the power density of the existing pressurized water reactor (PWR)-type reactors can be achieved by the use of internally and externally cooled annular fuel geometry. As a result, the accumulated stock-piles of Pu, especially if incorporated infertile-free inert matrix, can be burnt at a substantially higher rate as compared with the conventional mixed oxide-fueled reactors operating at standard power density. In this work, we explore the basic feasibility of a PWR core fully loaded with Pu incorporated infertile-free fuel of annular internally and externally cooled geometry and operating at 150% of nominal power density. We evaluate basic burnable poison designs, fuel management strategies, and reactivity feedback coefficients. The three-dimensional full core neutronic analysis performed with Studsvik Core Management System showed that the design of such a Pu-loaded annular fuel core is feasible but significantly more challenging than the Pu fertile-free core with solid fuel pins operating at nominal power density. The main difficulty arises from the fact that the annular fuel core requires at least 50% higher initial Pu loading in order to maintain the standard fuel cycle length of 18 months. Such a high Pu loading results in hardening of the neutron spectrum and consequent reduction in reactivity worth of all reactivity control mechanisms and, in some cases, positive moderator temperature coefficient (MTC). The use of isotopically enriched Gd and Er burnable poisons was found to be beneficial with respect to maximizing Pu burnup and reducing power peaking factors. Overall, the annular fertile-free Pu-loaded high-power-density core appears to be feasible, although it still has relatively high power peaking and potential for slightly positive MTC at beginning of cycle. However, we estimate that limiting the power density to 140% of the nominal case would assure acceptable core power peaking and negative MTC at all times during the cycle.

Low temperature (< 100 °c) deposited P-type cuprous oxide thin films: Importance of controlled oxygen and deposition energy

With the emergence of transparent electronics, there has been considerable advancement in n-type transparent semiconducting oxide (TSO) materials, such as ZnO, InGaZnO, and InSnO. Comparatively, the availability of p-type TSO materials is more scarce and the available materials are less mature. The development of p-type semiconductors is one of the key technologies needed to push transparent electronics and systems to the next frontier, particularly for implementing p-n junctions for solar cells and p-type transistors for complementary logic/circuits applications. Cuprous oxide (Cu2O) is one of the most promising candidates for p-type TSO materials. This paper reports the deposition of Cu2O thin films without substrate heating using a high deposition rate reactive sputtering technique, called high target utilisation sputtering (HiTUS). This technique allows independent control of the remote plasma density and the ion energy, thus providing finer control of the film properties and microstructure as well as reducing film stress. The effect of deposition parameters, including oxygen flow rate, plasma power and target power, on the properties of Cu2O films are reported. It is known from previously published work that the formation of pure Cu2O film is often difficult, due to the more ready formation or co-formation of cupric oxide (CuO). From our investigation, we established two key concurrent criteria needed for attaining Cu2O thin films (as opposed to CuO or mixed phase CuO/Cu2O films). First, the oxygen flow rate must be kept low to avoid over-oxidation of Cu2O to CuO and to ensure a non-oxidised/non-poisoned metallic copper target in the reactive sputtering environment. Secondly, the energy of the sputtered copper species must be kept low as higher reaction energy tends to favour the formation of CuO. The unique design of the HiTUS system enables the provision of a high density of low energy sputtered copper radicals/ions, and when combined with a controlled amount of oxygen, can produce good quality p-type transparent Cu2O films with electrical resistivity ranging from 102 to 104 Ω-cm, hole mobility of 1-10 cm2/V-s, and optical band-gap of 2.0-2.6 eV. These material properties make this low temperature deposited HiTUS Cu 2O film suitable for fabrication of p-type metal oxide thin film transistors. Furthermore, the capability to deposit Cu2O films with low film stress at low temperatures on plastic substrates renders this approach favourable for fabrication of flexible p-n junction solar cells. © 2011 Elsevier B.V. All rights reserved.