Comparison between granular pillared, organo- and inorgano-organo-bentonites for hydrocarbon and metal ion adsorption

Granular reactive materials have higher permeability and are therefore desirable for in situ groundwater pollution control. Three granular bentonites were prepared: an Al-pillared bentonite (PBg), an organo-bentonite (OBg) using a quaternary ammonium cation (QAC), and an inorgano-organo-bentonite (IOBg), using both the pillaring agent and the QAC. Powdered IOB (IOBp) was also prepared to test the effect of particle size. The modified bentonites were characterised with X-ray diffraction (XRD), Fourier transform infrared spectrometry (FT-IR), thermal gravimetric analysis (TGA) and uniaxial compression tests. The d-spacing increased only with QAC intercalation. The Young's modulus of IOBg was twice as high as OBg. Batch adsorption tests were performed with aqueous multimetal solutions of Pb2+, Cu2+, Cd2+, Zn2+ and Ni2+ ions, with liquid dodecane and with aqueous dodecane solutions. Metal adsorption fit the Langmuir isotherm. Adsorption occurred within 30min for PBg, while the granular organo-bentonite needed at least 12h to reach equilibrium. IOBp had the maximum adsorption capacity at higher metal concentration and lower adsorbent content (Cu2+: 2.2, Ni2+: 1.7, Zn2+: 1.4, Cd2+: 0.9 and Pb2+: 0.7 all in mmolg-1). The dual pillaring of the QAC and Al hydroxide increased the adsorption. The adsorption of liquid dodecane was in the order IOBg>OBg>PBg (3.2>2.7>1.7mmolg-1). Therefore IOBg has potential for the removal of toxic compounds found in soil, groundwater, storm water and wastewater. © 2012 Elsevier B.V.

Zinc oxide nanowire based hydrogen sensor on SOI CMOS platform

Here we report on the successful low-temperature growth of zinc oxide nanowires (ZnONWs) on silicon-on-insulator (SOI) CMOS micro-hotplates and their response, at different operating temperatures, to hydrogen in air. The SOI micro-hotplates were fabricated in a commercial CMOS foundry followed by a deep reactive ion etch (DRIE) in a MEMS foundry to form ultra-low power membranes. The micro-hotplates comprise p+ silicon micro-heaters and interdigitated metal electrodes (measuring the change in resistance of the gas sensitive nanomaterial). The ZnONWs were grown as a post-CMOS process onto the hotplates using a CMOS friendly hydrothermal method. The ZnONWs showed a good response to 500 to 5000 ppm of hydrogen in air. We believe that the integration of ZnONWs with a MEMS platform results in a low power, low cost, hydrogen sensor that would be suitable for handheld battery-operated gas sensors. © 2011 Published by Elsevier Ltd.

A thermopile based SOI CMOS MEMS wall shear stress sensor

In this paper we present for the first time, a novel silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) MEMS thermal wall shear stress sensor based on a tungsten hot-film and three thermopiles. These devices have been fabricated using a commercial 1 μm SOI-CMOS process followed by a deep reactive ion etch (DRIE) back-etch step to create silicon oxide membranes under the hot-film for effective thermal isolation. The sensors show an excellent repeatability of electro-thermal characteristics and can be used to measure wall shear stress in both constant current anemometric as well as calorimetric modes. The sensors have been calibrated for wall shear stress measurement of air in the range of 0-0.48 Pa using a suction type, 2-D flow wind tunnel. The calibration results show that the sensors have a higher sensitivity (up to four times) in calorimetric mode compared to anemometric mode for wall shear stress lower than 0.3 Pa. © 2013 IEEE.

A novel, sensitive potentiometric hydrocarbon sensor for high-vacuum applications.

A potentiometric device based on interfacing a solid electrolyte oxygen ion conductor with a thin platinum film acts as a robust, reproducible sensor for the detection of hydrocarbons in high- or ultrahigh-vacuum environments. Sensitivities in the order of approximately 5 x 10(-10) mbar are achievable under open circuit conditions, with good selectivity for discrimination between n-butane on one hand and toluene, n-octane, n-hexane, and 1-butene on the other hand. The sensor's sensitivity may be tuned by operating under constant current (closed circuit) conditions; injection of anodic current is also a very effective means of restoring a clean sensing surface at any desired point. XPS data and potentiometric measurements confirm the proposed mode of sensing action: the steady-state coverage of Oa, which sets the potential of the Pt sensing electrode, is determined by the partial pressure and dissociative sticking probability of the impinging hydrocarbon. The principles established here provide the basis for a viable, inherently flexible, and promising means for the sensitive and selective detection of hydrocarbons under demanding conditions.

Smart chemical sensor application of ZnO nanowires grown on CMOS compatible SOI microheater platform

Smart chemical sensor based on CMOS(complementary metal-oxide- semiconductor) compatible SOI(silicon on insulator) microheater platform was realized by facilitating ZnO nanowires growth on the small membrane at the relatively low temperature. Our SOI microheater platform can be operated at the very low power consumption with novel metal oxide sensing materials, like ZnO or SnO2 nanostructured materials which demand relatively high sensing temperature. In addition, our sol-gel growth method of ZnO nanowires on the SOI membrane was found to be very effective compared with ink-jetting or CVD growth techniques. These combined techniques give us the possibility of smart chemical sensor technology easily merged into the conventional semiconductor IC application. The physical properties of ZnO nanowire network grown by the solution-based method and its chemical sensing property also were reported in this paper.

Thermal characterization of SOI CMOS micro hot-plate gas sensors

This work reports on thermal characterization of SOI (silicon on insulator) CMOS (complementary metal oxide semiconductor) MEMS (micro electro mechanical system) gas sensors using a thermoreflectance (TR) thermography system. The sensors were fabricated in a CMOS foundry and the micro hot-plate structures were created by back-etching the CMOS processed wafers in a MEMS foundry using DRIE (deep reactive ion etch) process. The calibration and experimental details of the thermoreflectance based thermal imaging setup, used for these micro hot-plate gas sensor structures, are presented. Experimentally determined temperature of a micro hot-plate sensor, using TR thermography and built-in silicon resistive temperature sensor, is compared with that estimated using numerical simulations. The results confirm that TR based thermal imaging technique can be used to determine surface temperature of CMOS MEMS devices with a high accuracy. © 2010 EDA Publishing/THERMINIC.

Complementary metal-oxide-semiconductor-compatible and self-aligned catalyst formation for carbon nanotube synthesis and interconnect fabrication

We have for the first time developed a self-aligned metal catalyst formation process using fully CMOS (complementary metal-oxide-semiconductor) compatible materials and techniques, for the synthesis of aligned carbon nanotubes (CNTs). By employing an electrically conductive cobalt disilicide (CoSi 2) layer as the starting material, a reactive ion etch (RIE) treatment and a hydrogen reduction step are used to transform the CoSi 2 surface into cobalt (Co) nanoparticles that are active to catalyze aligned CNT growth. Ohmic contacts between the conductive substrate and the CNTs are obtained. The process developed in this study can be applied to form metal nanoparticles in regions that cannot be patterned using conventional catalyst deposition methods, for example at the bottom of deep holes or on vertical surfaces. This catalyst formation method is crucially important for the fabrication of vertical and horizontal interconnect devices based on CNTs. © 2012 American Institute of Physics.