109 resultados para maximum-intensity projection

em Cambridge University Engineering Department Publications Database


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Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a colorless WDM-PON incorporating a semiconductor optical amplifier (SOA) intensity modulator and a reflective SOA (RSOA) intensity modulator in the optical line termination and optical network unit, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5 Gb/s. It is shown that the RB noise and crosstalk effects are dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10 Gb/s downstream and 6 Gb/s upstream over 40 km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing in-line optical amplification and chromatic dispersion compensation. In particular, the aforementioned transmission performance can be improved to 23 Gb/s downstream and 8 Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems.

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The feasibility of utilising low-cost, un-cooled vertical cavity surface-emitting lasers (VCSELs) as intensity modulators in real-time optical OFDM (OOFDM) transceivers is experimentally explored, for the first time, in terms of achievable signal bit rates, physical mechanisms limiting the transceiver performance and performance robustness. End-to-end real-time transmission of 11.25 Gb/s 64-QAM-encoded OOFDM signals over simple intensity modulation and direct detection, 25 km SSMF PON systems is experimentally demonstrated with a power penalty of 0.5 dB. The low extinction ratio of the VCSEL intensity-modulated OOFDM signal is identified to be the dominant factor determining the maximum obtainable transmission performance. Experimental investigations indicate that, in addition to the enhanced transceiver performance, adaptive power loading can also significantly improve the system performance robustness to variations in VCSEL operating conditions. As a direct result, the aforementioned capacity versus reach performance is still retained over a wide VCSEL bias (driving) current (voltage) range of 4.5 mA to 9 mA (275 mVpp to 320 mVpp). This work is of great value as it demonstrates the possibility of future mass production of cost-effective OOFDM transceivers for PON applications.

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Detailed numerical investigations are undertaken of wavelength reused bidirectional transmission of adaptively modulated optical OFDM (AMOOFDM) signals over a single SMF in a WDM-PON incorporating a SOA intensity modulator and a RSOA intensity modulator in the OLT and ONU, respectively. A comprehensive theoretical model describing the performance of such network scenarios is, for the first time, developed, taking into account dynamic optical characteristics of SOA and RSOA intensity modulators as well as the effects of Rayleigh backscattering (RB) and residual downstream signal-induced crosstalk. The developed model is rigorously verified experimentally in RSOA-based real-time end-to-end OOFDM systems at 7.5Gb/s. It is shown that the RB noise and crosstalk effects are the dominant factors limiting the maximum achievable downstream and upstream transmission performance. Under optimum SOA and RSOA operating conditions as well as practical downstream and upstream optical launch powers, 10Gb/s downstream and 6Gb/s upstream over 40km SMF transmissions of conventional double sideband AMOOFDM signals are feasible without utilizing inline optical amplification and chromatic dispersion compensation. In particular, the transmission performance can be improved to 23Gb/s downstream and 8Gb/s upstream over 40 km SMFs when single sideband subcarrier modulation is adopted in the downstream systems. Copyright © 2010 The authors.

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One of the key technologies to evolve in the displays market in recent years is liquid crystal over silicon (LCOS) microdisplays. Traditional LCOS devices and applications such as rear projection televisions, have been based on intensity modulation electro-optical effects, however, recent developments have shown that multi-level phase modulation from these devices is extremely sought after for applications such as holographic projectors, optical correlators and adaptive optics. Here, we propose alternative device geometry based on the flexoelectric-optic effect in a chiral nematic liquid crystal. This device is capable of delivering a multilevel phase shift at response times less than 100 microsec which has been verified by phase shift interferometry using an LCOS test device. The flexoelectric on silicon device, due to its remarkable characteristics, enables the next generation of holographic devices to be realized.

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The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation in the deposition and film characteristics such as the deposition rate, optical band gap and IR absorption as a function of the hydrogen dilution is investigated. The deposition rate increases to a maximum value of about 250 Å min-1 at a hydrogen dilution ratio of about 20 (hydrogen flow (sccm)/acetylene + silane flow (sccm)) and decreases in response to a further increase in the hydrogen dilution. There is no strong dependence of the optical band gap on the hydrogen dilution within the dilution range investigated (10-60) and the optical band gap calculated from the E04 method varied marginally from about 2.85 to 3.17 eV. The room temperature photoluminescence (PL) peak energy and intensity showed a prominent shift to a maximum value of about 2.17 eV corresponding to maximum PL intensity at a moderate hydrogen dilution of about 30. The PL intensity showed a strong dependence on the hydrogen dilution variation.

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We show that the sensor localization problem can be cast as a static parameter estimation problem for Hidden Markov Models and we develop fully decentralized versions of the Recursive Maximum Likelihood and the Expectation-Maximization algorithms to localize the network. For linear Gaussian models, our algorithms can be implemented exactly using a distributed version of the Kalman filter and a message passing algorithm to propagate the derivatives of the likelihood. In the non-linear case, a solution based on local linearization in the spirit of the Extended Kalman Filter is proposed. In numerical examples we show that the developed algorithms are able to learn the localization parameters well.

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