Ultrafast sputtered ZnO thin films with high kT for acousticwave device applications

The fabrication of high frequency acoustic wave devices requires thedevelopment of thin films of piezoelectric materials with improved morphologicaland electro-acoustical properties. In particular, the crystalline orientationof the films, surface morphology, film stress and electrical resistivity are keyissues for the piezoelectric response. In the work reported here, ZnO thinfilms were deposited at high rates (>50 nm/min) using a novel process knownas the High Target Utilisation Sputtering (HiTUS). The films deposited possessexcellent crystallographic orientation, high resistivity (>109ωm), and exhibit surface roughness and film stress one order of magnitudelower than films grown with standard magnetron sputtering. The electromechanicalcoupling coefficient of the films, kT, was precisely calculated byimplementing the resonant spectrum method, and was found to be at least 6%higher than any previously reported kT of magnetron sputtered filmsto the Authors' knowledge. The low film stress of the film is deemed as one ofthe most important factors responsible for the high k T valueobtained. © 2010 IEEE.

On applications of high-frequency asymptotics in aeroacoustics.

The aim of this paper is to survey a range of applications of high-frequency asymptotic methods in aeroacoustics. Specifically, we are concerned with problems associated with noise generation, propagation and scattering as found in large modern aeroengines. With regard to noise generation, we consider the interaction between high-frequency vortical waves and thin aerofoils, with particular emphasis being placed on the way in which the vortical waves act on the non-uniform mean flow around the aerofoil. A ray-theoretic description of the resulting sound as it propagates along the engine intake is then presented, followed by consideration of the diffraction of these rays by the (possibly asymmetric) intake lip to produce sound in the far field. A range of more detailed possible extensions is also presented.

Nanopillar junctions.

The fabrication of nanopillar devices has been essential to the understanding and development of metallic spin electronics. This paper discusses the processes that can be used for the fabrication of such structures and the challenges in which they present, with particular emphasis on extreme sub-micrometre pillar structures suitable for the study of spin-transfer torque effects.