Trial by market: the Brightstar incubation experiment

Established firms accumulate a significant body of knowledge, expertise and capabilities that are often secondary to their central revenue generating activities. How do they leverage this expertise in non-core technology into future value creation opportunities? In this paper we examine an attempt by the telecommunications firm BT to create value from the accumulated knowledge within its laboratories by setting up an incubator. While conceived by the board as a mechanism for leveraging the value of non-core technology into the workplace, corporate support for the incubator was withdrawn after only three years and prompted the incubator to partner with a venture capital firm, NVP, in the spin-out of ventures. Through analysis of this single case we observe how entering into such a relationship reduces the transaction costs of accessing complementary resources, capabilities and competences, while simultaneously reducing a number of the risks associated with venturing for both parties. Partnering with the venture capitalist allows the established firm to get its intellectual property into the market, for it to be tested by the market and further developed. © 2010 Inderscience Enterprises Ltd.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Mechanism And Selectivity In The Epoxidation Of Ethylene Over Silver: The Results Of Single Crystal Measurements

The silver-catalysed oxidation of ethylene has been examined on the (III) face of a single crystal by a combination of electron spectroscopy and kinetic measurements at pressures of up to 50 Torr. The necessary and sufficient conditions for ethylene oxide formation are established, reaction intermediates are identified, kinetic isotope effects are observed and the role of Cs in modifying reaction selectivity is examined. It is shown that surface alkali exhibits opposite effects on the reactions which lead to the further oxidation of ethylene oxide and on the direct combustion of ethylene. © 1984.