Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Doping mechanism in tetrahedral amorphous carbon

Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

Mechanism And Selectivity In The Epoxidation Of Ethylene Over Silver: The Results Of Single Crystal Measurements

The silver-catalysed oxidation of ethylene has been examined on the (III) face of a single crystal by a combination of electron spectroscopy and kinetic measurements at pressures of up to 50 Torr. The necessary and sufficient conditions for ethylene oxide formation are established, reaction intermediates are identified, kinetic isotope effects are observed and the role of Cs in modifying reaction selectivity is examined. It is shown that surface alkali exhibits opposite effects on the reactions which lead to the further oxidation of ethylene oxide and on the direct combustion of ethylene. © 1984.