54 resultados para low noise amplifier (LNA)

em Cambridge University Engineering Department Publications Database


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In this presentation, we report excellent electrical and optical characteristics of a dual gate photo thin film transistor (TFT) with bi-layer oxide channel, which was designed to provide virgin threshold voltage (V T) control, improve the negative bias illumination temperature stress (NBITS) reliability, and offer high photoconductive gain. In order to address the photo-sensitivity of phototransistor for the incoming light, top transparent InZnO (IZO) gate was employed, which enables the independent gate control of dual gate photo-TFT without having any degradation of its photosensitivity. Considering optimum initial V T and NBITS reliability for the device operation, the top gate bias was judiciously chosen. In addition, the speed and noise performance of the photo-TFT is competitive with silicon photo-transistors, and more importantly, its superiority lies in optical transparency. © 2011 IEEE.

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Antenna-coupled field effect transistors have been developed as plasma-wave THz detectors in both InAs nanowire and graphene channel materials. Room temperature operation has been achieved up to 3 THz, with noise equivalent power levels < 10-10 W/Hz1/2, and high-speed response already suitable for large area THz imaging applications. © 2013 IEEE.

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We investigate how sensitive Gallager's codes are, when decoded by the sum-product algorithm, to the assumed noise level. We have found a remarkably simple function that fits the empirical results as a function of the actual noise level at both high and low noise levels. © 2004 Elsevier B.V.

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We investigate how sensitive Gallager's codes are, when decoded by the sum-product algorithm, to the assumed noise level. We have found a remarkably simple function that fits the empirical results as a function of the actual noise level at both high and low noise levels. ©2003 Published by Elsevier Science B. V.