Local lifetime engineering in 600V pin diode using mix-mode simulation

This paper reports a detailed analysis of the effect of local lifetime killing (LLK) within the drift region on the reverse recovery (RR) characteristics and on-state performance of 600V Silicon PiN diodes. The paper also discusses the influence of the measurement circuit on the reverse recovery of the high voltage diodes and it proposes a simple and effective mix-mode simulation tool for an accurate assessment of the diode performance in reverse recovery mode. © 2013 IEEE.

Mode I crack growth resistance of metallic foams

A Dugdale-type cohesive zone model is used to predict the mode I crack growth resistance (R-curve) of metallic foams, with the fracture process characterized by an idealized traction-separation law that relates the crack surface traction to crack opening displacement. A quadratic yield function, involving the von Mises effective stress and mean stress, is used to account for the plastic compressibility of metallic foams. Finite element calculations are performed for the crack growth resistance under small scale yielding and small scale bridging in plane strain, with K-field boundary conditions. The following effects upon the fracture process are quantified: material hardening, bridging strength, T-stress (the non-singular stress acting parallel to the crack plane), and the shape of yield surface. To study the failure behaviour and notch sensitivity of metallic foams in the presence of large scale yielding, a study is made for panels embedded with either a centre-crack or an open hole and subjected to tensile stressing. For the centre-cracked panel, a transition crack size is predicted for which the fracture response switches from net section yielding to elastic-brittle fracture. Likewise, for a panel containing a centre-hole, a transition hole diameter exists for which the fracture response switches from net section yielding to a local maximum stress criterion at the edge of the hole.

Enhancing parametric sensitivity using mode localization in electrically coupled mems resonators

We use vibration localization as a sensitive means of detecting small perturbations in stiffness in a pair of weakly coupled micromechanical resonators. For the first time, the variation in the eigenstates is studied by electrostatically coupling nearly identical resonators to allow for stronger localization of vibrational energy due to perturbations in stiffness. Eigenstate variations that are orders of magnitude greater than corresponding shifts in resonant frequency for an induced stiffness perturbation are experimentally demonstrated. Such high, voltagetunable parametric sensitivities together with the added advantage of intrinsic common mode rejection pave the way to a new paradigm of mechanical sensing. ©2009 IEEE.

The shear mode of multilayer graphene

The quest for materials capable of realizing the next generation of electronic and photonic devices continues to fuel research on the electronic, optical and vibrational properties of graphene. Few-layer graphene (FLG) flakes with less than ten layers each show a distinctive band structure. Thus, there is an increasing interest in the physics and applications of FLGs. Raman spectroscopy is one of the most useful and versatile tools to probe graphene samples. Here, we uncover the interlayer shear mode of FLGs, ranging from bilayer graphene (BLG) to bulk graphite, and suggest that the corresponding Raman peak measures the interlayer coupling. This peak scales from ∼43cm -1 in bulk graphite to ∼31cm -1 in BLG. Its low energy makes it sensitive to near-Dirac point quasiparticles. Similar shear modes are expected in all layered materials, providing a direct probe of interlayer interactions. © 2012 Macmillan Publishers Limited. All rights reserved.