A MIMO-OFDM testbed for wireless local area networks

We describe the design steps and final implementation of a MIMO OFDM prototype platform developed to enhance the performance of wireless LAN standards such as HiperLAN/2 and 802.11, using multiple transmit and multiple receive antennas. We first describe the channel measurement campaign used to characterize the indoor operational propagation environment, and analyze the influence of the channel on code design through a ray-tracing channel simulator. We also comment on some antenna and RF issues which are of importance for the final realization of the testbed. Multiple coding, decoding, and channel estimation strategies are discussed and their respective performance-complexity trade-offs are evaluated over the realistic channel obtained from the propagation studies. Finally,we present the design methodology, including cross-validation of the Matlab, C++, and VHDL components, and the final demonstrator architecture. We highlight the increased measured performance of the MIMO testbed over the single-antenna system. £.

Analytical model and experimental validation of friction laws for composites under low loads

In order to account for interfacial friction of composite materials, an analytical model based on contact geometry and local friction is proposed. A contact area includes several types of microcontacts depending on reinforcement materials and their shape. A proportion between these areas is defined by in-plane contact geometry. The model applied to a fibre-reinforced composite results in the dependence of friction on surface fibre fraction and local friction coefficients. To validate this analytical model, an experimental study on carbon fibrereinforced epoxy composites under low normal pressure was performed. The effects of fibre volume fraction and fibre orientation were studied, discussed and compared with analytical model results. © Springer Science+Business Media, LLC 2012.

Local hydrogen reactions of H*2 in a-Si:H

Hydrogen rearrangements at the H*2 complex are used as a model of low energy, local transitions in the two-hydrogen density of states of hydrogenated amorphous silicon (a-Si:H). These are used to account for the low activation energy motion of H observed by nuclear magnetic resonance, the low energy defect annealing of defects formed by bias stress in thin film transistors, and the elimination of hydrogen from the growth zone during the low temperature plasma deposition of a-Si:H. © 1998 Elsevier Science B.V. All rights reserved.