Study of lateral mode SOI-MEMS resonators for reduced anchor loss

MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data. © 2011 IOP Publishing Ltd.

200-V lateral superjunction LIGBT on partial SOI

This letter presents a novel lateral superjunction lateral insulated-gate bipolar transistor (LIGBT) in partial silicon-on-insulator (SOI) technology in 0.18-μm partial-SOI (PSOI) high-voltage (HV) process. For an n-type superjunction LIGBT, the p-layer in the superjunction drift region not only helps in achieving uniform electric field distribution but also contributes to the on-state current. The superjunction LIGBT successfully achieves a breakdown voltage (BV) of 210 V with an R dson of 765 mΩ ̇ mm 2. It exhibits half the value of specific on-state resistance R dson and three times higher saturation current (I dsat) for the same BV, compared to a comparable lateral superjunction laterally diffused metal-oxide-semiconductor fabricated in the same technology. It also performs well in higher temperature dc operation with 38.8% increase in R dson at 175°C, compared to the room temperature without any degradation in latch-up performance. To realize this device, it only requires one additional mask layer into X-FAB 0.18-μm PSOI HV process. © 2012 IEEE.

The lateral superjunction PSOI LIGBT and LDMOSFET

This paper presents a comparison between the superjunction LIGBT and the LDMOSFET in partial silicon-on-insulator (PSOI) technology in 0.18μm PSOI HV process. The superjunction drift region helps in achieving uniform electric field distribution in both structures but also contributes to the on-state current in the LIGBT. The superjunction LIGBT successfully achieves breakdown voltage (BV) of 210V with Rdson of 765mΩ.mm2. It exhibits reduced specific on-state resistance Rdson and higher saturation current (Idsat) for the same BV compared to a compatible lateral superjunction LDMOS in the same technology. © 2012 IEEE.

200V superjunction lateral IGBT fabricated on partial SOI

A 200V lateral insulated gate bipolar transistor (LIGBT) was successfully developed using lateral superjunction (SJ) in 0.18μm partial silicon on insulator (SOI) HV process. The results presented are based on extensive experimental measurements and numerical simulations. For an n-type lateral SJ LIGBT, the p layer in the SJ drift region helps in achieving uniform electric field distribution. Furthermore, the p-pillar contributes to the on-state current. Furthermore, the p-pillar contributes to sweep out holes during the turn-off process, thus leading to faster removal of plasma. To realize this device, one additional mask layer is required in the X-FAB 0.18μm partial SOI HV process. © 2013 IEEE.

A dynamic view of the spread and intracellular distribution of Salmonella enterica.

The events that determine the dynamics of proliferation, spread and distribution of microbial pathogens within their hosts are surprisingly heterogeneous and poorly understood. We contend that understanding these phenomena at a sophisticated level with the help of mathematical models is a prerequisite for the development of truly novel, targeted preventative measures and drug regimes. We describe here recent studies of Salmonella enterica infections in mice which suggest that bacteria resist the antimicrobial environment inside host cells and spread to new sites, where infection foci develop, and thus avoid local escalation of the adaptive immune response. We further describe implications for our understanding of the pathogenic mechanism inside the host.

Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Lateral field emitters fabricated using carbon nanotubes

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. © 2003 Elsevier Science B.V. All rights reserved.

Fabrication of carbon nanotube lateral field emitters

We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 106 cm-1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.