Evidence of quantum lateral confinement in side-gated resonant tunnelling diodes formed by patterned substrate regrowth

MBE regrowth on patterned np-GaAs wafers has been used to fabricate GaAs/AlGaAs double barrier resonant tunnel diodes with a side-gate in the plane of the quantum well. The physical diameters vary from 1 to 20 μm. For a nominally 1 μm diameter diode the peak current is reduced by more than 95% at a side-gate voltage of -2 V at 1.5 K, which we estimate corresponds to an active tunnel region diameter of 75 nm ± 10 nm. At high gate biases additional structure appears in the conductance data. Differential I-V measurements show a linear dependence of the spacing of subsidiary peaks on gate bias indicating lateral quantum confinement. © 1996 American Institute of Physics.

Forcing of self-excited round jet diffusion flames

In this experimental and numerical study, two types of round jet are examined under acoustic forcing. The first is a non-reacting low density jet (density ratio 0.14). The second is a buoyant jet diffusion flame at a Reynolds number of 1100 (density ratio of unburnt fluids 0.5). Both jets have regions of strong absolute instability at their base and this causes them to exhibit strong self-excited bulging oscillations at welldefined natural frequencies. This study particularly focuses on the heat release of the jet diffusion flame, which oscillates at the same natural frequency as the bulging mode, due to the absolutely unstable shear layer just outside the flame. The jets are forced at several amplitudes around their natural frequencies. In the non-reacting jet, the frequency of the bulging oscillation locks into the forcing frequency relatively easily. In the jet diffusion flame, however, very large forcing amplitudes are required to make the heat release lock into the forcing frequency. Even at these high forcing amplitudes, the natural mode takes over again from the forced mode in the downstream region of the flow, where the perturbation is beginning to saturate non-linearly and where the heat release is high. This raises the possibility that, in a flame with large regions of absolute instability, the strong natural mode could saturate before the forced mode, weakening the coupling between heat release and incident pressure perturbations, hence weakening the feedback loop that causes combustion instability. © 2009 The Combustion Institute. Published by Elsevier Inc. All rights reserved.

Lateral field emitters fabricated using carbon nanotubes

We report on the fabrication of lateral emitters using carbon nanotubes (CNTs) grown via plasma enhanced chemical vapour deposition (PECVD). Carbon nanotubes are dispersed randomly onto a substrate, mapped, contacted with metal, and by etching the substrate, a suspended lateral emitter structure is formed. Field emission measurements from the lateral emitters show a turn-on voltage as low as 12 V. The emission characteristics showed good fits to the Fowler-Nordheim (FN) theory indicating that conventional field emission was indeed observed from these devices. © 2003 Elsevier Science B.V. All rights reserved.

Fabrication of carbon nanotube lateral field emitters

We report on the fabrication and field emission of carbon nanotube lateral field emitters. Due to its high aspect ratio and mechanical strength, we use vertically aligned multi-wall carbon nanotubes prepared by plasma-enhanced chemical vapour deposition as cathodes, which makes the fabrication of cantilever type lateral field emitters possible. The emission characteristics show that the field emission initiates at 11-17 V. The device has high geometrical enhancement factors (9.3 × 106 cm-1) compared to standard Spindt tips, which may be due to increased field concentration at the nanotube tip and the close proximity of the anode (<1 μm). The relative ease of fabrication compared to vertical field emitters and enhanced field emission characteristics observed makes the carbon nanotube lateral field emitter a good candidate for future integrated nano-electronic devices.

Study of lateral mode SOI-MEMS resonators for reduced anchor loss

MEMS resonators fabricated in silicon-on-insulator (SOI) technology must be clamped to the substrate via anchoring stems connected either from within the resonator or through the sides, with the side-clamped solution often employed due to manufacturing constraints. This paper examines the effect of two types of commonly used side-clamped, anchoring-stem geometries on the quality factor of three different laterally-driven resonator topologies. This study employs an analytical framework which considers the relative distribution of strain energies between the resonating body and clamping stems. The ratios of the strain energies are computed using ANSYS FEA and used to provide an indicator of the expected anchor-limited quality factors. Three MEMS resonator topologies have been fabricated and characterized in moderate vacuum. The associated measured quality factors are compared against the computed strain energy ratios, and the trends are shown to agree well with the experimental data. © 2011 IOP Publishing Ltd.