33 resultados para laser-acceleration. high intensity lasers, radiation-pressure acceleration

em Cambridge University Engineering Department Publications Database


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Multimode sound radiation from hard-walled semi-infinite ducts with uniform subsonic flow is investigated theoretically. An analytic expression, valid in the high frequency limit, is derived for the multimode directivity function in the forward arc for a general family of mode distribution functions. The multimode directivity depends on the amplitude and directivity function of each individual mode. The amplitude of each mode is expressed as a function of cut-off ratio for a uniform distribution of incoherent monopoles, a uniform distribution of incoherent axial dipoles and for equal power per mode. The modes' directivity functions are obtained analytically by applying a Lorentz transformation to the zero flow solution. The analytic formula for the multimode directivity with flow is derived assuming total transmission of power at the open-end of the duct. This formula is compared to the exact numerical result for an unflanged duct, computed utilizing a Wiener-Hopf solution. The agreement is shown to be excellent. Copyright © 2008 by the American Institute of Aeronautics and Astronautics, Inc. All rights reserved.

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Simultaneous high modulation speed and high modulation efficiency operation of a two-electrode tapered laser is reported. 1Gb/s direct data modulation is achieved with 68mA applied current swing for a 0.95W output optical modulation amplitude. © 2009 Optical Society of America.

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Dense arrays of high aspect ratio Si micro-pyramids have been formed by cumulative high intensity laser irradiation of doped Si wafers in an SF6 environment. A comparative study using nanosecond (XeCl, 308 nm) and femtosecond (Ti: Sapphire, 800 nm and KrF, 248 nm) laser pulses has been performed in this work. The influence of pulse duration and ambient gas pressure (SF6) is also presented. Scanning electron microscopy has shown that upon laser irradiation conical features appear on the Si surface in a rather homogenous distribution and with a spontaneous self alignment into arrays. Their lowest tip diameter is 800 nm; while their height reaches up to 90 mum. Secondary tip decoration appears on the surface of the formed spikes. Areas of 2 X 2 mm(2) covered with Si cones have been tested as cold cathode field emitters. After several conditioning cycles, the field emission threshold for the studied Si tips is as low as 2 V/mum, with an emission current of 10(-3) A/cm(2) at 4 V/mum. Even though these structures have smaller aspect ratios than good quality carbon nanotubes, their field emission properties are similar. The simple and direct formation of field emission Si arrays over small pre-selected areas by laser irradiation could lead to a novel approach for the development of electron sources. (C) 2003 Elsevier B.V. All rights reserved.