27 resultados para large truck crash causation study

em Cambridge University Engineering Department Publications Database


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A Dugdale-type cohesive zone model is used to predict the mode I crack growth resistance (R-curve) of metallic foams, with the fracture process characterized by an idealized traction-separation law that relates the crack surface traction to crack opening displacement. A quadratic yield function, involving the von Mises effective stress and mean stress, is used to account for the plastic compressibility of metallic foams. Finite element calculations are performed for the crack growth resistance under small scale yielding and small scale bridging in plane strain, with K-field boundary conditions. The following effects upon the fracture process are quantified: material hardening, bridging strength, T-stress (the non-singular stress acting parallel to the crack plane), and the shape of yield surface. To study the failure behaviour and notch sensitivity of metallic foams in the presence of large scale yielding, a study is made for panels embedded with either a centre-crack or an open hole and subjected to tensile stressing. For the centre-cracked panel, a transition crack size is predicted for which the fracture response switches from net section yielding to elastic-brittle fracture. Likewise, for a panel containing a centre-hole, a transition hole diameter exists for which the fracture response switches from net section yielding to a local maximum stress criterion at the edge of the hole.

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This paper considers plasma-enhanced chemical vapor deposited (PECVD) silicon nitride (SiNx) and silicon oxide (SiOx) as gate dielectrics for organic thin-film transistors (OTFTs), with solution-processed poly[5, 5′ -bis(3-dodecyl-2-thienyl)-2, 2′ -bithiophene] (PQT-12) as the active semiconductor layer. We examine transistors with SiNx films of varying composition deposited at 300 °C as well as 150 °C for plastic compatibility. The transistors show over 100% (two times) improvement in field-effect mobility as the silicon content in SiNx increases, with mobility (μFE) up to 0.14 cm2 /V s and on/off current ratio (ION / IOFF) of 108. With PECVD SiOx gate dielectric, preliminary devices exhibit a μFE of 0.4 cm2 /V s and ION / IOFF of 108. PQT-12 OTFTs with PECVD SiNx and SiOx gate dielectrics on flexible plastic substrates are also presented. These results demonstrate the viability of using PECVD SiN x and SiOx as gate dielectrics for OTFT circuit integration, where the low temperature and large area deposition capabilities of PECVD films are highly amenable to integration of OTFT circuits targeted for flexible and lightweight applications. © 2008 American Institute of Physics.

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Discusses a study conducted to determine the best development path for large wind turbine rotor design. Shape and number of blades, degrees of freedom allowed, and control strategy are considered. Manufacture and costs are also discussed. Two-bladed, stall-regulated, teetered rotors are more cost effective than three-bladed rotors. Single-bladed rotors can be even more cost-effective. No new manufacturing techniques are required. The most cost-effective rotor includes a hub constructed in wood/composite materials, bonded to the blades. There is strong incentive for the blade manufacturer to supply the complete rotor. (from author's abstract)

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High quality large grain high Tc superconducting ceramics offer enormous potential as 'permanent' magnets and in magnetic screening applications at 77K. This requires sample dimensions -cm with uniform high critical current densities of the order 105 A/cm2 in applied magnetic fields of IT. We report a study of the magnetic characterisation of a typical large YBa2Cu3O7-δ grain, prepared by seeded peritectic solidification, and correlate the magnetically determined critical current density, Jc, with microstuctural features from different regions of the bulk sample. From this data we extract the temperature, field and positional dependence of the critical current density of the samples and the irreversibility line. We find that whilst the bulk sample exhibits a good Jc of order 104 A/cm2 (77K, 1T), the local Jc is strongly correlated with the sample microstructure towards the edge of the sample and more severely at the centre of the sample by the presence of SmBa2Cu3O7-δ seed crystal. © 1997 IEEE.

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Nano-phase (5-20 nm) particles of YBa2(Cu0.5M 0.6)O6 [where M = Nb, Ta, Mo, W, Zr and Hf] have been introduced successfully into RE-Ba-Cu-O single grain superconductors. A study to enlarge the size of a single grain containing these particles has been carried out involving measurement of the growth rate as a function of YBa 2(Cu0.5M0.6)O6 phase concentration and degree of un-dercooling. The influence of the change in YBa2 (Cu0.8M0.5)O6 concentration on microstructural features is also investigated and the superconducting properties of these large grain superconductors are presented. © 2005 IEEE.

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This paper discusses the application of Discrete Event Simulation (DES) in modelling the complex relationship between patient types, case-mix and operating theatre allocation in a large National Health Service (NHS) Trust in London. The simulation model that was constructed described the main features of nine theatres, focusing on operational processes and patient throughput times. The model was used to test three scenarios of case-mix and to demonstrate the potential of using simulation modelling as a cost effective method for understanding the issues of healthcare operations management and the role of simulation techniques in problem solving. The results indicated that removing all day cases will reduce patient throughput by 23.3% and the utilization of the orthopaedic theatre in particular by 6.5%. This represents a case example of how DES can be used by healthcare managers to inform decision making. © 2008 IEEE.

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A combined experimental and numerical study of a transonic shock wave in a parallel walled duct subject to downstream pressure perturbations has been conducted. Experiments and simulations have been carried out with a shock strength of M∞ = 1.4 for pressure perturbation frequencies in the range 16-90 Hz. The dynamics of unsteady shock motion and the interaction structure between the unsteady transonic shock wave and the turbulent tunnel floor boundary layer have been investigated. It is found that the (experimentally measured) dynamics of shock motion are generally well predicted by the computational scheme, especially at relatively low (≈ 40 Hz) frequencies. However, at higher frequencies (≈ 90 Hz), some subtle differences between the shock dynamics measured in experiments and those predicted by Computational Fluid Dynamics (CFD) exist. There is evidence from experiments that variations in shock / boundary layer interaction (SBLI) structure caused by shock motion are responsible for a change in the nature of shock dynamics between low and high frequency. In contrast, numerical results at low and high frequencies do not differ significantly and this suggests that the numerical method is not fully capturing the physics of the unsteady flow. Possible reasons for this are considered and a number of areas where CFD is unable to replicate experimental observations are identified. Significantly, CFD predicts changes in SBLI structure due to shock motion that are much too large and this may explain why none of the subtle effects on shock dynamics seen in experiments occur in CFD. Further work developing numerical methods that demonstrate a more realistic sensitivity of SBLI structure to unsteady shock motion is required. Copyright © 2010 by P.J.K. Bruce.

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This paper addresses a major gap in reported research on open innovation (OI): how do companies implement open innovation? To answer this question a sample of 43 cross-sector firms were reviewed for their OI implementation approaches. The study analyzed how firms moved from practising closed to open innovation, classifying the adoption path according to the impetus for the adoption of the OI paradigm and the coordination of the OI implementation. The way firms adopted OI was found to vary according to (1) their innovation requirements, (2) the timing of the implementation and (3) their organizational culture. © 2011 Elsevier Ltd. All rights reserved.

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The goal of this work was to investigate stability in relation to the magnitude and direction of forces applied by the hand. The endpoint stiffness and joint stiffness of the arm were measured during a postural task in which subjects exerted up to 30% maximum voluntary force in each of four directions while controlling the position of the hand. All four coefficients of the joint stiffness matrix were found to vary linearly with both elbow and shoulder torque. This contrasts with the results of a previous study, which employed a force control task and concluded that the joint stiffness coefficients varied linearly with either shoulder or elbow torque but not both. Joint stiffness was transformed into endpoint stiffness to compare the effect on stability as endpoint force increased. When the joint stiffness coefficients were modeled as varying with the net torque at only one joint, as in the previous study, we found that hand position became unstable if endpoint force exceeded about 22 N in a specific direction. This did not occur when the joint stiffness coefficients were modeled as varying with the net torque at both joints, as in the present study. Rather, hand position became increasingly more stable as endpoint force increased for all directions of applied force. Our analysis suggests that co-contraction of biarticular muscles was primarily responsible for the increased stability. This clearly demonstrates how the central nervous system can selectively adapt the impedance of the arm in a specific direction to stabilize hand position when the force applied by the hand has a destabilizing effect in that direction.

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The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.