Relay node placement for wireless sensor networks deployed in tunnels

Node placement plays a significant role in the effective and successful deployment of Wireless Sensor Networks (WSNs), i.e., meeting design goals such as cost effectiveness, coverage, connectivity, lifetime and data latency. In this paper, we propose a new strategy to assist in the placement of Relay Nodes (RNs) for a WSN monitoring underground tunnel infrastructure. By applying for the first time an accurate empirical mean path loss propagation model along with a well fitted fading distribution model specifically defined for the tunnel environment, we address the RN placement problem with guaranteed levels of radio link performance. The simulation results show that the choice of appropriate path loss model and fading distribution model for a typical environment is vital in the determination of the number and the positions of RNs. Furthermore, we adapt a two-tier clustering multi-hop framework in which the first tier of the RN placement is modelled as the minimum set cover problem, and the second tier placement is solved using the search-and-find algorithm. The implementation of the proposed scheme is evaluated by simulation, and it lays the foundations for further work in WSN planning for underground tunnel applications. © 2010 IEEE.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.