Enhancement of microfluidic efficiency with nanocrystalline diamond interlayer in the ZnO-based surface acoustic wave device

Ultra-smooth nanocrystalline diamond (UNCD) films with high-acoustic wave velocity were introduced into ZnO-based surface acoustic wave (SAW) devices to enhance their microfluidic efficiency by reducing the acoustic energy dissipation into the silicon substrate and improving the acoustic properties of the SAW devices. Microfluidic efficiency of the ZnO-based SAW devices with and without UNCD inter layers was investigated and compared. Results showed that the pumping velocities increase with the input power and those of the ZnO/UNCD/Si devices are much larger than those of the ZnO/Si devices at the same power. The jetting efficiency of the droplet was improved by introducing the UNCD interlayer into the ZnO/Si SAW device. Improvement in the microfluidic efficiency is mainly attributed to the diamond layer, which restrains the acoustic wave to propagate in the top layer rather than dissipating into the substrate. © 2013 Springer-Verlag Berlin Heidelberg.

Structure-flexoelastic properties of bimesogenic liquid crystals

In this paper, we report on the flexoelastic and viscoelastic ratios for a number of bimesogens compounds with the same generic structure. Values are obtained indirectly by measuring the flexoelectro-optic response in the chiral nematic phase. By varying the molecular structure we alter the bend angle, transverse dipole moment, and length of the molecule. First, to examine the influence of the bend angle we use a homologous series whereby the only alteration in the molecular structure is the number of methylene units in the aliphatic spacer, n. Results show that the flexoelastic ratio, e K, and the effective flexoelectric coefficient, e, both exhibit an odd-even effect with values for n=odd being greater than that for n=even. This is understood in terms of an increase in the bend angle of the molecule and an increase in the transverse dipole moment. Second, in order to investigate the impact of the dipole moment, we have altered the mesogenic units so as to vary the longitudinal dipole moment and used different linkages in the aliphatic spacer in an attempt to alter the transverse dipole moment. Qualitatively, the results demonstrate that the odd-spaced bimesogen with larger transverse dipole moments exhibit larger flexoelastic ratios. © 2007 The American Physical Society.

Scanning transmission electron microscopy investigation of the Si(111)/AlN interface grown by metalorganic vapor phase epitaxy

The structure and chemistry of the interface between a Si(111) substrate and an AlN(0001) thin film grown by metalorganic vapor phase epitaxy have been investigated at a subnanometer scale using high-angle annular dark field imaging and electron energy-loss spectroscopy. 〈1120̄〉AlN ∥ 〈110〉Si and 〈0001〉AlN ∥ 〈111〉 Si epitaxial relations were observed and an Al-face polarity of the AlN thin film was determined. Despite the use of Al deposition on the Si surface prior to the growth, an amorphous interlayer of composition SiNx was identified at the interface. Mechanisms leading to its formation are discussed. © 2010 American Institute of Physics.

Structure-flexoelastic properties of bimesogenic liquid crystals.

In this paper, we report on the flexoelastic and viscoelastic ratios for a number of bimesogens compounds with the same generic structure. Values are obtained indirectly by measuring the flexoelectro-optic response in the chiral nematic phase. By varying the molecular structure we alter the bend angle, transverse dipole moment, and length of the molecule. First, to examine the influence of the bend angle we use a homologous series whereby the only alteration in the molecular structure is the number of methylene units in the aliphatic spacer, n . Results show that the flexoelastic ratio, e/K , and the effective flexoelectric coefficient, e , both exhibit an odd-even effect with values for n=odd being greater than that for n=even . This is understood in terms of an increase in the bend angle of the molecule and an increase in the transverse dipole moment. Second, in order to investigate the impact of the dipole moment, we have altered the mesogenic units so as to vary the longitudinal dipole moment and used different linkages in the aliphatic spacer in an attempt to alter the transverse dipole moment. Qualitatively, the results demonstrate that the odd-spaced bimesogen with larger transverse dipole moments exhibit larger flexoelastic ratios.

Starting-up roadmapping fast

Technology roadmapping is a powerful technique for supporting technology management and planning in the firm. The roadmap enables the evolution of markets, products and technologies to be explored, together with the linkages between the various perspectives. A process called T-Plan, which has been developed to support the rapid initiation of roadmapping and thus address these challenges is described.

Engineering change impact on product development processes

This paper presents a method to manage Engineering Changes (EC) during the product development process, which is seen to be a complex system. The ability to manage engineering changes efficiently reflects the agility of an enterprise. Although there are unnecessary ECs that should be avoided, many of the ECs are actually beneficial. The proposed method explores the linkages between the product development process features and product specifications dependencies. It suggests ways of identifying and managing specification dependencies to support the Engineering Change Management process. Furthermore, the impacts of an EC on the product specifications as well as on the process organization are studied. © 2009 World Scientific Publishing Company.

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Shifting atomic patterns: on the origin of the different atomic-scale patterns of graphite as observed using scanning tunnelling microscopy.

We present an in-depth study of the myriad atomically resolved patterns observed on graphite using the scanning tunnelling microscope (STM) over the past three decades. Through the use of highly resolved atomic resolution images, we demonstrate how the interactions between the different graphene layers comprising graphite affect the local surface atomic charge density and its resulting symmetry orientation, with particular emphasis on interactions that are thermodynamically unstable. Moreover, the interlayer graphene coupling is controlled experimentally by varying the tip-surface interaction, leading to associated changes in the atomic patterns. The images are corroborated by first-principles calculations, further validating our claim that surface graphene displacement, coming both from lateral and vertical displacement of the top graphene layer, forms the basis of the rich variety of atomic patterns observed in STM experiments on graphite.

Active glass-polymer superlattice structure for photonic integration.

We propose an all-laser processing approach allowing controlled growth of organic-inorganic superlattice structures of rare-earth ion doped tellurium-oxide-based glass and optically transparent polydimethyl siloxane (PDMS) polymer; the purpose of which is to illustrate the structural and thermal compatibility of chemically dissimilar materials at the nanometer scale. Superlattice films with interlayer thicknesses as low as 2 nm were grown using pulsed laser deposition (PLD) at low temperatures (100 °C). Planar waveguides were successfully patterned by femtosecond-laser micro-machining for light propagation and efficient Er(3+)-ion amplified spontaneous emission (ASE). The proposed approach to achieve polymer-glass integration will allow the fabrication of efficient and durable polymer optical amplifiers and lossless photonic devices. The all-laser processing approach, discussed further in this paper, permits the growth of films of a multitude of chemically complex and dissimilar materials for a range of optical, thermal, mechanical and biological functions, which otherwise are impossible to integrate via conventional materials processing techniques.