Binary excitation of a high-Q bulk acoustic microresonator by actuation polarity inversion

We present a technique for independently exciting two resonant modes of vibration in a single-crystal silicon bulk mode microresonator using the same electrode configuration through control of the polarity of the DC actuation voltage. Applications of this technique may include built-in temperature compensation by the simultaneous selective excitation of two closely spaced modes that may have different temperature coefficients of resonant frequency. The technique is simple and requires minimum circuit overhead for implementation. The technique is implemented on square plate resonators with quality factors as high as 3.06 × 106. Copyright © 2008 by ASME.

Capacitive nanoelectromechanical switch based on suspended carbon nanotube array

We present the fabrication and high frequency characterization of a capacitive nanoelectromechanical system (NEMS) switch using a dense array of horizontally aligned single-wall carbon nanotubes (CNTs). The nanotubes are directly grown onto metal layers with prepatterned catalysts with horizontal alignment in the gas flow direction. Subsequent wetting-induced compaction by isopropanol increases the nanotube density by one order of magnitude. The actuation voltage of 6 V is low for a NEMS device, and corresponds to CNT arrays with an equivalent Young's modulus of 4.5-8.5 GPa, and resistivity of under 0.0077 Ω·cm. The high frequency characterization shows an isolation of -10 dB at 5 GHz. © 2010 American Institute of Physics.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Fabrication and control of miniature McKibben actuators

This paper investigates the development of miniature McKibben actuators. Due to their compliancy, high actuation force, and precision, these actuators are on the one hand interesting for medical applications such as prostheses and instruments for surgery and on the other hand for industrial applications such as for assembly robots. During this research, pneumatic McKibben actuators have been miniaturized to an outside diameter of 1.5 mm and a length ranging from 22 mm to 62 mm. These actuators are able to achieve forces of 6 N and strains up to about 15% at a supply pressure of 1 MPa. The maximal actuation speed of the actuators measured during this research is more than 350 mm/s. Further, positioning experiments with a laser interferometer and a PI controller revealed that these actuators are able to achieve sub-micron positioning resolution. © 2010 Published by Elsevier B.V. All rights reserved.

Microsized piston-cylinder pneumatic and hydraulic actuators fabricated by lithography

Future microrobotic applications require actuators that can generate a high actuation force in a limited volume. Up to now, little research has been performed on the development of pneumatic or hydraulic microactuators, although they offer great prospects in achieving high force densities. In addition, large actuation strokes and high actuation speeds can be achieved by these actuators. This paper describes a fabrication process for piston-cylinder pneumatic and hydraulic actuators based on etching techniques, UV-definable polymers, and low-temperature bonding. Prototype actuators with a piston area of 0.15 mm2 have been fabricated in order to validate the production process. These actuators achieve actuation forces of more than 0.1 N and strokes of 750 μm using pressurized air or water as driving fluid. © 2009 IEEE.

Development of a hybrid ferrofluid seal technology for miniature pneumatic and hydraulic actuators

Future microrobotic applications require actuators that can generate a high actuation force and stroke in a limited volume. Up to now, little research has been performed on the development of pneumatic and hydraulic microactuators, although they offer great prospects in achieving high force densities. One of the main technological barriers in the development of these actuators is the fabrication of powerful seals with low leakage. This paper presents a seal technology for linear fluidic microactuators based on ferrofluids. A design and simulation method for these seals has been developed and validated by measurements on miniaturized actuator prototypes. These actuators have an outside diameter of 2 mm, a length of 13 mm and have been tested using both pressurized air and water. Our current actuator prototypes are able to operate at pressures up to 1.6 MPa without leakage. At these pressures, forces up to 0.65 N have been achieved. The stroke of the actuators is 10 mm. © 2009 Elsevier B.V. All rights reserved.

Design and characteristion of a hydraulic microactuator fabricated by lithography

To improve the force output of microactuators, this work focuses on actuators driven by pressurized gasses or liquids. Despite their well known ability to generate high actuation forces, hydraulic actuators remain uncommon in microsystems. This is both due to the difficulty of fabricating these microactuators with the existing micromachining processes and to the lack of adequate microseals. This paper describes how to overcome these limitations with a combination of anisotropic micromachining, UV definable polymers and low temperature bonding. The functionality of these actuators is proven by extensive measurements which showed that actuation forces of 0.1 N can be achieved for actuators with an active cross-section of 0.15 mm2. This is an order of magnitude higher than what is reported for classic MEMS actuators of similar size.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.