Design and simulations of SOI CMOS micro-hotplate gas sensors

This paper describes a new generation of integrated solid-state gas-sensors embedded in SOI micro-hotplates. The micro-hotplates lie on a SOI membrane and consist of MOSFET heaters that elevate the operating temperature, through self-heating, of a gas sensitive material. These sensors are fully compatible with SOI CMOS or BiCMOS technologies, offer ultra-low power consumption (under 100 mW), high sensitivity, low noise, low unit cost, reproducibility and reliability through the use of on-chip integration. In addition, the new integrated sensors offer a nearly uniform temperature distribution over the active area at its operating temperatures at up to about 300-350°C. This makes SOI-based gas-sensing devices particularly attractive for use in handheld battery-operated gas monitors. This paper reports on the design of a chemo-resistive gas sensor and proposes for the first time an intelligent SOI membrane microcalorimeter using active micro-FET heaters and temperature sensors. A comprehensive set of numerical and analogue simulations is also presented including complex 2D and 3D electro-thermal numerical analyses. © 2001 Elsevier Science B.V. All rights reserved.

High sensitive NO2 gas sensor with low power consumption using selectively grown ZnO nanorods.

The noble gas sensor using multiple ZnO nanorods was fabricated with CMOS compatible process and sol-gel growth method on selective area and gas response characteristics to NO2 gas of the sensor device were investigated. We confirmed the sensors had high sensitive response denoted by the sensitivity of several tens for NO2 gas sensing and also showed pretty low power consumption close to 20 mW even though the recovery of resistance come up to almost the initial value.

Thin film monitoring with silicon bulk acoustic resonators

Abstract-This paper reports a single-crystal silicon mass sensor based on a square-plate resonant structure excited in the wine glass bulk acoustic mode at a resonant frequency of 2.065 MHz and an impressive quality factor of 4 million at 12 mtorr pressure. Mass loading on the resonator results in a linear downshift in the resonant frequency of this device, wherein the measured sensitivity is found to be 175 Hz cm2/μg. The silicon resonator is embedded in an oscillator feedback loop, which has a short-term frequency stability of 3 mHz (approximately 1.5 ppb) at an operating pressure of 3.2 mtorr, corresponding to an equivalent mass noise floor of 17 pg/cm2. Possible applications of this device include thin film monitoring and gas sensing, with the potential added benefits of scalability and integration with CMOS technology. © 2008 IEEE.

On-chip deposition of carbon nanotubes using CMOS microhotplates.

The direct deposition of carbon nanotubes on CMOS microhotplates is demonstrated in this paper. Tungsten microhotplates, fabricated on thin SOI membranes aside CMOS control circuitry, are used to locally grow carbon nanotubes by chemical vapour deposition. Unlike bulk heating of the entire chip, which could cause degradation to CMOS devices and interconnects due to high growth temperatures in excess of 500 °C, this novel technique allows carbon nanotubes to be grown on-chip in localized regions. The microfabricated heaters are thermally isolated from the rest of the CMOS chip as they are on the membranes. This allows carbon nanotubes to be grown alongside CMOS circuitry on the same wafer without any external heating, thus enabling new applications (e.g. smart gas sensing) where the integration of CMOS and carbon nanotubes is required.

Hydrogen sensor based on silicon carbide (SiC) MOS capacitor

Silicon carbide (SiC) based MOS capacitor devices are used for gas sensing in high temperature and chemically reactive environments. A SiC MOS capacitor structure used as hydrogen sensor is defined and simulated. The effects of hydrogen concentration, temperature and interface traps on C-V characteristics were analysed. A comparison between structures with different oxide layer types (SiO2, TiO2 and ZnO) and thicknesses (50..10nm) was conducted. The TiO2 based structure has better performance than the SiO2 and ZnO structures. Also, the performance of the SiC MOS capacitor increases at thinner oxide layers. © 2012 IEEE.

Soft-lithographic processed soluble micropatterns of reduced graphene oxide for wafer-scale thin film transistors and gas sensors

PDMS based imprinting is firstly developed for patterning of rGO on a large area. High quality stripe and square shaped rGO patterns are obtained and the electrical properties of the rGO film can be adjusted by the concentration of GO suspension. The arrays of rGO electronics are fabricated from the patterned film by a simple shadow mask method. Gas sensors, which are based on these rGO electronics, show high sensitivity and recyclable usage in sensing NH 3. © 2012 The Royal Society of Chemistry.

SOI sensing technologies for harsh environment

This paper reviews and addresses certain aspects of Silicon-On-Insulator (SOI) technologies for a harsh environment. The paper first describes the need for specialized sensors in applications such as (i) domestic and other small-scale boilers, (ii) CO2 Capture and Sequestration, (iii) oil & gas storage and transportation, and (iv) automotive. We describe in brief the advantages and special features of SOI technology for sensing applications requiring temperatures in excess of the typical bulk silicon junction temperatures of 150oC. Finally we present the concepts, structures and prototypes of simple and smart micro-hotplate and Infra Red (IR) based emitters for NDIR (Non Dispersive IR) gas sensors in harsh environments. © 2012 IEEE.

A high temperature and low power SOI CMOS MEMS based thermal conductivity gas sensor

The design, 3D FEM modelling and measurement results of a novel high temperature, low power SOI CMOS MEMS thermal conductivity gas sensor are presented here. The sensor consists of a circular membrane with an embedded tungsten micro-heater. The high sensing capability is based on the temperature sensitivity of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm 2. The circular membrane has a 600 μm diameter while the heating element has a 320 μm diameter. Measurement results show that for a constant power consumption of 75 mW the heater temperature was 562.4°C in air, 565.9°C in N2, 592.5°C for 1 % H2 in Ar and 599.5°C in Ar. © 2013 IEEE.

A dual mode SOI CMOS MEMS based thermal conductivity and IR absorption gas sensor

Design, FEM modelling and characterization of a novel dual mode thermal conductivity and infrared absorption sensor using SOI CMOS technology is reported. The dual mode sensing capability is based on the temperature sensitivity and wideband infrared radiation emission of the resistive heating element. The sensor was fabricated at a commercial foundry using a 1 μm process and measures only 1×1 mm2. Infrared detectors usually use thermopiles in addition to a separate IR source. A single highly responsive dual mode source and sensing element targeting not only low molecular mass gases but also greenhouse gases, while consuming 40 mW power at 700°C in synthetic air, thus makes this sensor particularly viable for battery powered handheld devices. © 2013 IEEE.

Low power consumption and high sensitivity carbon monoxide gas sensor using indium oxide nanowire.

In this paper, micro gas sensor was fabricated using indium oxide nanowire for effective gas detection and monitoring system. Indium oxide nanowire was grown using thermal CVD, and their structural properties were examined by the SEM, XRD and TEM. The electric properties for microdropped indium oxide nanowire device were measured, and gas response characteristics were examined for CO gas. Sensors showed high sensitivity and stability for CO gas. And with below 20 mw power consumption, 5 ppm CO could be detected.