Optimizing the energy output of vertical axis wind turbines for fluctuating wind conditions

The control of a wind turbine to the mean wind speed in a gusty wind results in very poor performance. Fluctuations in wind speed with time constants shorter than the response time of a wind turbine results in operation away from optimum design conditions. The effectiveness of a turbine operating in a gusty wind is shown though the use of an unsteady performance coefficient, C e. This performance coefficient is similar in form to a power coefficient. However in order to accommodate unsteady effects, Ce is defined as a ratio of energy extracted to the total wind energy available over a set time period. The turbine's response to real wind data is modelled, in the first instance, by assuming a constant rotational speed operation. It is shown that a significant increase in energy production can be realized by demanding a Tip Speed Ratio above the steady state optimum. The constant speed model is then further extended to incorporate inertial and controller effects. Parameters dictating how well a turbine can track a demand in Tip Speed Ratio have been identified and combined, to form a non-dimensional turbine response parameter. This parameter characterizes a turbine's ability to track a demand in Tip Speed Ratio dependent on an effective gust frequency. A significant increase in energy output of 42% and 245% is illustrated through the application of this over-speed control. This is for the constant rotational speed and Tip Speed Ratio feedback models respectively. The affect of airfoil choice on energy extraction within a gusty wind has been considered. The adaptive control logic developed enables the application of airfoils demonstrating high maximum L/D values but sharp stalling characteristics to be successfully used in a VAWT design.

Statistical gear health analysis which is robust to fluctuating loads and operating speeds

Condition-based maintenance is concerned with the collection and interpretation of data to support maintenance decisions. The non-intrusive nature of vibration data enables the monitoring of enclosed systems such as gearboxes. It remains a significant challenge to analyze vibration data that are generated under fluctuating operating conditions. This is especially true for situations where relatively little prior knowledge regarding the specific gearbox is available. It is therefore investigated how an adaptive time series model, which is based on Bayesian model selection, may be used to remove the non-fault related components in the structural response of a gear assembly to obtain a residual signal which is robust to fluctuating operating conditions. A statistical framework is subsequently proposed which may be used to interpret the structure of the residual signal in order to facilitate an intuitive understanding of the condition of the gear system. The proposed methodology is investigated on both simulated and experimental data from a single stage gearbox. © 2011 Elsevier Ltd. All rights reserved.

Spectroscopy of neutron-rich Dy168,170: Yrast band evolution close to the NpNn valence maximum

The yrast sequence of the neutron-rich dysprosium isotope Dy168 has been studied using multinucleon transfer reactions following collisions between a 460-MeV Se82 beam and an Er170 target. The reaction products were identified using the PRISMA magnetic spectrometer and the γ rays detected using the CLARA HPGe-detector array. The 2+ and 4+ members of the previously measured ground-state rotational band of Dy168 have been confirmed and the yrast band extended up to 10+. A tentative candidate for the 4+→2+ transition in Dy170 was also identified. The data on these nuclei and on the lighter even-even dysprosium isotopes are interpreted in terms of total Routhian surface calculations and the evolution of collectivity in the vicinity of the proton-neutron valence product maximum is discussed. © 2010 The American Physical Society.

Electronic structure and surface properties of SrBi2Ta2O9 and related oxides

The electronic structure of SrBi2Ta2O9 and related oxides such as SrBi2Nb2O9, Bi2WO6 and Bi3Ti4O12 have been calculated by the tight-binding method. In each case, the band gap is about 4.1 eV and the band edge states occur on the Bi-O layers and consist of mixed O p/Bi s states at the top of the valence band and Bi p states at the bottom of the conduction band. The main difference between the compounds is that Nb 5d and Ti 4d states in the Nb and Ti compounds lie lower than the Ta 6d states in the conduction band. The surface pinning levels are found to pin Schottky barriers 0.8 eV below the conduction band edge.

Electronic structure of the layered ferroelectric perovskite SrBi2Ta2O9

The band structure of the Bi layered perovskite SrBi2Ta2O9 (SBT) has been calculated by the tight binding method. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O block. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response of SBT while the ferroelectric response originates from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for the excellent fatigue properties of SBT.

Electronic structure of the ferroelectric layered perovskite SrBi2Ta2O9

The band structure of the layered perovskite SrBi2Ta2O9 (SBT) was calculated by tight binding and the valence band density of states was measured by x-ray photoemission spectroscopy. We find both the valence and conduction band edges to consist of states primarily derived from the Bi-O layer rather than the perovskite Sr-Ta-O blocks. The valence band maximum arises from O p and some Bi s states, while the conduction band minimum consists of Bi p states, with a wide band gap of 5.1 eV. It is argued that the Bi-O layers largely control the electronic response whereas the ferroelectric response originates mainly from the perovskite Sr-Ta-O block. Bi and Ta centered traps are calculated to be shallow, which may account in part for its excellent fatigue properties. © 1996 American Institute of Physics.

Optical and electronic properties of amorphous diamond

The optical and electronic properties of highly tetrahedral amorphous diamond-like carbon (amorphous diamond, a-D) films were investigated. The structure of the films grown on silicon and glass substrates, under similar deposition conditions using a compact filtered cathodic vacuum arc system, are compared using electron energy loss spectroscopy (EELS). Results from hydrogenation of the films are also reported. The hydrogenated films show two prominent IR absorption peaks centered at 2920 and 2840 cm-1, which are assigned to the stretch mode of the C-H bond in the sp3 configuration on the C-H3 and C-H sites respectively. The high loss EELS spectra show no reduction in the high sp3 content in the hydrogenated films. UV and visible transmission spectra of a-D thin films are also presented. The optical band gap of 2.0-2.2 eV for the a-D films is found to be consistent with the electronic bandgap. The relationship between the intrinsic compressive stress in the films and the refractive index is also presented. The space charge limited current flow is analyzed and coupled with the optical absorption data to give an estimate of 1018 cm-3 eV-1 for the valence band edge density of states.

Tetrahedral amorphous carbon-silicon heterojunction band energy offsets

Non-hydrogenated tetrahedral amorphous carbon (ta-C) has shown superior field emission characteristics. The understanding of the emission mechanism has been hindered by the lack of any directly measured data on the band offsets between ta-C and Si. In this paper results from direct in situ X-ray photoemission spectroscopy (XPS) measurements of the band-offset between ta-C and Si are reported. The measurements were carried out using a filtered cathodic vacuum arc (FCVA) deposition system attached directly to an ultra-high vacuum (UHV) XPS chamber via a load lock chamber. Repeated XPS measurements were carried out after monolayer depositions on in situ cleaned Si substrates. The total film thickness for each set of measurements was approximately 5 nm. Analysis of the data from undoped ta-C on n and p Si show the unexpected result that the conduction band barrier between Si and ta-C remains around 1.0 eV, but that the valence band barrier changes from 0.7 to 0.0 eV. The band line up derived from these barriers suggests that the Fermi level in the ta-C lies 0.3 eV above the valence band on both p and n+Si. The heterojunction barriers when ta-C is doped with nitrogen are also presented. The implications of the heterojunction energy barrier heights for field emission from ta-C are discussed.

Prediction of sound emission from open turbulent premixed flames

The sound emission from open turbulent flames is dictated by the two-point spatial correlation of rate of change of fluctuating heat release rate and this correlation has not been investigated directly in the past studies. Turbulent premixed flame data from DNS and laser diagnostics are analyzed to study this correlation function and the two-point spatial correlation of the fluctuating heat release rate. This shows that the correlation functions have simple Gaussian forms whose integral length scale is related to the laminar flame thickness and amplitude depends on the spatial distribution of the time-mean rate of heat release. These results and RANS-CFD solution of open turbulent premixed flames are post-processed to obtain the far field SPL, which agrees well with measured values. © 2010 by the American Institute of Aeronautics and Astronautics, Inc.

Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.