Plasma enhanced chemical vapour deposited carbon nanotubes for field emission applications

Plasma Enhanced Chemical Vapour Deposition is an extremely versatile technique for directly growing multiwalled carbon nanotubes onto various substrates. We will demonstrate the deposition of vertically aligned nanotube arrays, sparsely or densely populated nanotube forests, and precisely patterned arrays of nanotubes. The high-aspect ratio nanotubes (∼50 nm in diameter and 5 microns long) produced are metallic in nature and direct contact electrical measurements reveal that each nanotube has a current carrying capacity of 107-108 A/cm2, making them excellent candidates as field emission sources. We examined the field emission characteristics of dense nanotube forests as well as sparse nanotube forests and found that the sparse forests had significantly lower turn-on fields and higher emission currents. This is due to a reduction in the field enhancement of the nanotubes due to electric field shielding from adjacent nanotubes in the dense nanotube arrays. We thus fabricated a uniform array of single nanotubes to attempt to overcome these issues and will present the field emission characteristics of this.

Guided propagation of surface acoustic waves and piezoelectric field enhancement in ZnO/GaAs systems

The characteristics and dispersion of the distinct surface acoustic waves (SAWs) propagating in ZnO/GaAs heterostructures have been studied experimentally and theoretically. Besides the Rayleigh mode, strong Sezawa modes, which propagate confined in the overlayer, arise due to the smaller sound velocity in ZnO than in the substrate. The design parameters of the structure providing the strongest piezoelectric field at a given depth within the layered system for the different modes have been determined. The piezoelectric field of the Rayleigh mode is shown to be more than 10 times stronger at the interface region of the tailored ZnO/GaAs structure than at the surface region of the bulk GaAs, whereas the same comparison for the first Sezawa mode yields a factor of 2. This enhancement, together with the capacity of selecting waves with different piezoelectric and strain field depth profiles, will facilitate the development of SAW-modulated optoelectronic applications in GaAs-based systems. © 2011 American Institute of Physics.