A starting point for addressing product innovativeness in the Fuzzy Front-End

Product innovativeness is a primary contingent factor to be addressed for the development of flexible management for the front-end. However, due to complexity of this early phase of the innovation process, the definition of which attributes to customise is critical to support a contingent approach. Therefore, this study investigates front-end attributes that need to be customised to permit effective management for different degrees of innovation. To accomplish this aim, a literature review and five case studies were performed. The findings highlighted the front-end strategic and operational levels as factors influencing the front-end attributes related to product innovativeness. In conclusion, this study suggests that two front-end attributes should be customised: development activities and decision-making approach. Copyright © 2011 Inderscience Enterprises Ltd.

Novel growth and properties of GaAs nanowires on Si substrates.

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A double layer structure, consisting of a thin initial layer grown at low V/III ratio and low temperature followed by a layer grown at high V/III ratio and high temperature, is crucial for achieving straight, vertically aligned GaAs nanowires on Si(111) substrates. An in situ annealing step at high temperature after buffer layer growth improves the surface and structural properties of the buffer layer, which further improves the morphology of the GaAs nanowire growth. Through such optimizations we show that vertically aligned GaAs nanowires can be fabricated on Si(111) substrates and achieve the same structural and optical properties as GaAs nanowires grown directly on GaAs(111)B substrates.