External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation

This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

Passively harmonically mode-locked vertical-external-cavity surface-emitting laser emitting 1.1 ps pulses at 147 GHz repetition rate

Coupled-cavity passive harmonic mode-locking of a quantum well based vertical-external-cavity surface-emitting laser has been demonstrated, yielding an output pulse train of 1.5 ps pulses at a repetition rate of 80 GHz and with an average power of 80 mW. Harmonic mode-locking results from coupling between the main laser cavity and a cavity formed within the substrate of the saturable absorber structure. Mode-locking on the second harmonic of the substrate cavity allows a train of 1.1 ps pulses to be generated at a repetition rate of 147 GHz with 40 mW average power. © 2010 American Institute of Physics.

Low short term timing jitter in an integrated monolithic extended cavity semiconductor mode-locked laser

Jitter measurements were performed on a monolithically integrated active/passive cavity multiple quantum well laser, actively mode-locked at 10 GHz via modulation of an absorber section. Sub-10 ps pulses were produced upon optimization of the drive conditions to the gain, distributed Bragg reflector, and absorber sections. A model was also developed using travelling wave rate equations. Simulation results suggest that spontaneous emission is the dominant cause of jitter, with carrier dynamics having a time constant of the order of 1 ns.

Variable repetition frequency femtosecond-pulse surface emitting semiconductor laser

We report a femtosecond-pulse vertical-external-cavity surface-emitting laser with a continuous repetition frequency tuning range of 8 near 1 GHz. A constant average output power of 56 ± 1 mW and near-transform-limited pulse duration of 450 ± 20 fs were observed across the entire tuning range. © 2011 American Institute of Physics.

Phase-conjugation broad area twin-contact semiconductor laser

Experimental demonstration of lasing in a broad area twin-contact semiconductor laser which operates as a phase-conjugation (PC) mirror in an external cavity configuration is reported. This allows "self-aligned" and self-pumped spatially nondegenerate four-wave mixing to be achieved without the need for external optical signals. The external cavity laser system is very insensitive to tilt misalignments of the external mirror in the PC regime and exhibits very good mechanical stability. The resonant frequency of the external cavity lies in the GHz range which corresponds to a subnanosecond time response of phase conjugation processes in the semiconductor laser. © 1997 American Institute of Physics.

Ultrafast and widely tuneable vertical-external-cavity surface-emitting laser, mode-locked by a graphene-integrated distributed Bragg reflector

We report a versatile and cost-effective way of controlling the unsaturated loss, modulation depth and saturation fluence of graphene-based saturable absorbers (GSAs), by changing the thickness of a spacer between SLG and a high-reflection mirror. This allows us to modulate the electric field intensity enhancement at the GSA from 0 up to 400%, due to the interference of incident and reflected light at the mirror. The unsaturated loss of the SLG-mirror-assembly can be reduced to$\sim$0. We use this to mode-lock a VECSEL from 935 to 981nm. This approach can be applied to integrate SLG into various optical components, such as output coupler mirrors, dispersive mirrors, dielectric coatings on gain materials. Conversely, it can also be used to increase absorption (up to 10%) in various graphene based photonics and optoelectronics devices, such as photodetectors.

Multi-wavelength picosecond pulse generation using a monolithically integrated Multi-wavelength Grating Cavity (MGC) laser

Multi-wavelength picosecond pulses are demonstrated using a single monolithically integrated Multi-wavelength Grating Cavity (MGC) laser. This is achieved on two WDM wavelength channels at a repetition rate of 7.63 GHz.