15 resultados para dopants

em Cambridge University Engineering Department Publications Database


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The twist elastic constant, K2, and the rotational viscosity coefficient, γ1, are of importance when the response lime for the in-plane switching mode is studied. Since adding dopants is one technique to improve the response characteristics, the effect of dopants on these physical properties is significant. The effect on K2 and γ1 of adding alkyl(alkoxy) phenylcyclopentenones and alkyl(alkoxy) cyanobiphenyls to the base mixture ZLI-4792 together with their temperature dependence have been investigated using different temperature scales. The reduced temperature scale showed the effect of these dopants on K2 is small. On the other hand, the temperature dependence of γ1 depends on both the absolute temperature scale and the reduced temperature scale. Therefore, it is clear that the choice of temperature scale with which to compare γ1 for different systems raises fundamental questions which way not have a unique answer. 2000 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.

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Doping in hydrogenated amorphous silicon occurs by a process of an ionised donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favoured because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

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Doping in hydrogenated amorphous silicon occurs by a process of an ionized donor atom partially compensated by a charged dangling bond. The total energies of various dopant and dopant/bonding combinations are calculated for tetrahedral amorphous carbon. It is found that charged dangling bonds are less favored because of the stronger Coulombic repulsion in ta-C. Instead the dopants can be compensated by weak bond states in the lower gap associated with odd-membered π-rings or odd-numbered π-chains. The effect is that the doping efficiency is low but there are not charged midgap recombination centres, to reduce photoconductivity or photoluminescence with doping, as occurs in a-Si:H.

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A novel pair of the E- and Z-isomeric 1R,4R-2-(4-heptyloxyphenyl)-benzylidene-p-menthan-3-ones has been prepared and the influence of distinctions in their molecular geometry on macroscopic properties of liquid crystal systems with the induced supra-molecular helical structure has been studied. The significantly lower helical twisting power of the chiral Z-isomer in comparison with that of E- one has been confirmed in the case of induced cholesteric systems based on 4-pentyl-4-cyanobiphenyl. The phase behavior and ferroelectric characteristics have been investigated for smectic-C* compositions based on the eutectic mixture of the homological 4-hexyloxyphenyl-4'-hexyloxy- and 4-hexyloxyphenyl-4'-octyloxybenzoates containing the novel isomeric chiral dopants. The spontaneous polarisation of the opposite signs induced by the isomeric chiral components has been revealed for the compositions studied. Distinctions in phase states, absolute values of the spontaneous polarization, smectic tilt angle and rotation viscosity of the systems obtained are discussed.

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Some 1R,4R-2-(4-phenylbenzylidene)-p-menthane-3-one derivatives containing the ether or ester linking group between benzene rings of the arylidene fragment have been studied as chiral dopants in ferroelectric liquid crystal systems based on the eutectic mixture (1:1) of two phenylbenzoate derivatives CmH2m+1OC6H4COOC6 H4OCnH2n+1 (n = 6; m = 8, 10). The ferroelectric properties of these compositions (spontaneous polarization, rotation viscosity, smectic tilt angle as well as quantitative characteristics of their concentration dependences) were compared with those for systems including chiral dopants containing no linking group. Ferroelectric parameters of the induced ferroelectric compositions studied have been shown to depend essentially on the presence of the linking group between benzene rings and its nature as well as on the number of the benzene rings in the rigid molecular core of the chiral dopants used. For all ferroelectric liquid crystal systems studied, the influence of the chiral dopants on the thermal stability of N*, SmA and SmC* mesophases has been quantified. The influence of the linking group nature in the dopant molecules on the characteristics of the systems studied is discussed taking into account results of the conformational analysis carried out by the semi-empirical AM1 and PM3 methods.

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New chiral compounds 3R-methylcyclohexanone derivatives were synthesized. These compounds were revealed to exhibit the mesomorphic behavior within rather wide temperature ranges. Types of formed mesophases and phase transition temperatures were determined by polarizing microscopy, differential scanning calorimetry and small angle scattering of X-ray. Mesomorphic properties of the new chiral compounds were compared with those for the chiral 2-arylidene derivatives of 3R,6R-3-methyl-6-isopropylcyclohexanone (d-isomenthone) studied earlier. Distinctions between these two types of compounds in an ability to form mesophases and also in twisting properties as chiral dopants in induced cholesteric mesophases are considered.

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New 2-arylidene-p-menthane-3-ones containing the ether bridging group in the arylidene fragment have been synthesized and studied as chiral dopants in ferroelectric liquid crystal mixtures. The ferroelectric properties of these compositions were compared with those for compositions including chiral dopants that do not contain any bridging group. The influence of bridging group and terminal alkyl substituent length in the dopant molecule on the ferroelectric parameters of systems studied is discussed. © 2001 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint, a member of the Taylor & Francis Group,.

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Recent progress in material science has proved that high-temperature superconductors, such as bulk melt-processed yttrium barium copper oxide (YBCO) single domains, have a great potential to trap significant magnetic fields. In this paper, we will describe a novel method of YBCO magnetization that only requires the applied field to be at the level of a permanent magnet. Instead of applying a pulsed high magnetic field on the YBCO, a thermally actuated material (TAM), such as Mg0.15}hbox{Cu}0.15} hbox{Zn0.7 Ti0.04}Fe1.96boxO4, has been used as an intermedium to create a travelling magnetic field by changing the local temperature so that the local permeability is changed to build up the magnetization of the YBCO gradually after multiple pumping cycles. It is well known that the relative permeability of ferrite is a function of temperature and its electromagnetic properties can be greatly changed by adding dopants such as Mg or Ti; therefore, it is considered to be the most promising TAM for future flux pumping technology. Ferrite samples were fabricated by means of the conventional ceramic method with different dopants. Zinc and iron oxides were used as raw materials. The samples were sintered at 1100 C, 1200 C} , and 1300 C. The relative permeability of the samples was measured at temperatures ranging from 77 to 300 K. This work investigates the variation of the magnetic properties of ferrites with different heat treatments and doping elements and gives a smart insight into finding better ferrites suitable for flux pumping technology. © 2002-2011 IEEE.

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The presence of liquid fuel inside the engine cylinder is believed to be a strong contributor to the high levels of hydrocarbon emissions from spark ignition (SI) engines during the warm-up period. Quantifying and determining the fate of the liquid fuel that enters the cylinder is the first step in understanding the process of emissions formation. This work uses planar laser induced fluorescence (PLIF) to visualize the liquid fuel present in the cylinder. The fluorescing compounds in indolene, and mixtures of iso-octane with dopants of different boiling points (acetone and 3-pentanone) were used to trace the behavior of different volatility components. Images were taken of three different planes through the engine intersecting the intake valve region. A closed valve fuel injection strategy was used, as this is the strategy most commonly used in practice. Background subtraction and masking were both performed to reduce the effect of any spurious fluorescence. The images were analyzed on both a time and crank angle (CA) basis, showing the time of maximum liquid fuel present in the cylinder and the effect of engine events on the inflow of liquid fuel. The results show details of the liquid fuel distribution as it enters the engine as a function of crankangle degree, volatility and location in the cylinder. A. semi-quantitative analysis based on the integration of the image intensities provides additional information on the temporal distribution of the liquid fuel flow. © 1998 Society of Automotive Engineers, Inc.

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The mechanisms and kinetics of axial Ge-Si nanowire heteroepitaxial growth based on the tailoring of the Au catalyst composition via Ga alloying are studied by environmental transmission electron microscopy combined with systematic ex situ CVD calibrations. The morphology of the Ge-Si heterojunction, in particular, the extent of a local, asymmetric increase in nanowire diameter, is found to depend on the Ga composition of the catalyst, on the TMGa precursor exposure temperature, and on the presence of dopants. To rationalize the findings, a general nucleation-based model for nanowire heteroepitaxy is established which is anticipated to be relevant to a wide range of material systems and device-enabling heterostructures.

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We report the demonstration of an optically activated shutter based upon a short-pitch chiral nematic liquid crystal (LC) device sandwiched between crossed polarizers. This LC is comprised of photo-active chiral dopants. In the trans-state, the LC appears dark between crossed polarizers due to the very short pitch. As the pitch is extended through exposure to ultraviolet light, the device becomes transmissive reaching a maximum for a particular value of the pitch. As a result, it is possible to switch between the light and dark states by subjecting the device to visible light so as to cause a cis-trans photo-isomerisation. © 2013 AIP Publishing LLC.

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Metallic silicides have been used as contact materials on source/drain and gate in metal-oxide semiconductor (MOS) structure for 40 years. Since the 65 nm technology node, NiSi is the preferred material for contact in microelectronic due to low resistivity, low thermal budget, and low Si consumption. Ni(Pt)Si with 10 at.% Pt is currently employed in recent technologies since Pt allows to stabilize NiSi at high temperature. The presence of Pt and the very low thickness (<10 nm) needed for the device contacts bring new concerns for actual devices. In this work, in situ techniques [X-ray diffraction (XRD), X-ray reflectivity (XRR), sheet resistance, differential scanning calorimetry (DSC)] were combined with atom probe tomography (APT) to study the formation mechanisms as well as the redistribution of dopants and alloy elements (Pt, Pd.) during the silicide formation. Phenomena like nucleation, lateral growth, interfacial reaction, diffusion, precipitation, and transient phase formation are investigated. The effect of alloy elements (Pt, Pd.) and dopants (As, B.) as well as stress and defects induced by the confinement in devices on the silicide formation mechanism and alloying element redistribution is examined. In particular APT has been performed for the three-dimensional (3D) analysis of MOSFET at the atomic scale. The advances in the understanding of the mechanisms of formation and redistribution are discussed. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

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The Ni silicide formed at low temperature on Si nanowire has been analyzed by atom probe tomography (APT) thanks to a special technique for sample preparation. A method of preparation has been developed using the focused ion beam (FIB) for the APT analysis of nanowires (NWs). This method allow for the measurement of the radial distribution when a NW is cut, buried in a protective metal matrix, and finally mounted on the APT support post. This method was used for phosphorous doped Si NWs with or without a silicide shell, and allows obtaining the concentration and distribution of chemical elements in three-dimensions (3D) in the radial direction of the NWs. The distribution of atoms in the NWs has been measured including dopants and Au contamination. These measurements show that δ-Ni2Si phase is formed on Si NW, Au is found as cluster at the Ni/δ-Ni2Si interface and P is segregated at the δ-Ni2Si/ Si NW interface. The results obtained on NWs after silicidation were compared with the silicide on the Si substrate, showing that the same silicide phase δ-Ni2Si formed in both cases (NWs and substrate). © 2013 Elsevier B.V. All rights reserved.