Effect of hydrogen dilution on the deposition of carbon-rich a-SiC:H films by the electron cyclotron resonance method

The deposition of hydrogenated amorphous silicon carbide (a-SiC:H) films from a mixture of silane, acetylene and hydrogen gas using the electron cyclotron resonance chemical vapour deposition (ECR-CVD) process is reported. The variation in the deposition and film characteristics such as the deposition rate, optical band gap and IR absorption as a function of the hydrogen dilution is investigated. The deposition rate increases to a maximum value of about 250 Å min-1 at a hydrogen dilution ratio of about 20 (hydrogen flow (sccm)/acetylene + silane flow (sccm)) and decreases in response to a further increase in the hydrogen dilution. There is no strong dependence of the optical band gap on the hydrogen dilution within the dilution range investigated (10-60) and the optical band gap calculated from the E04 method varied marginally from about 2.85 to 3.17 eV. The room temperature photoluminescence (PL) peak energy and intensity showed a prominent shift to a maximum value of about 2.17 eV corresponding to maximum PL intensity at a moderate hydrogen dilution of about 30. The PL intensity showed a strong dependence on the hydrogen dilution variation.

Investigation of the dilution process for measurement of particulate matter from spark-ignition engines

Measurements of particulate matter (PM) from spark ignition (SI) engine exhaust using dilution tunnels will become more prevalent as emission standards are tightened. Hence, a study of the dilution process was undertaken in order to understand how various dilution related parameters affect the accuracy with which PM sizes and concentrations can be determined. A SI and a compression ignition (CI) engine were separately used to examine parameters of the dilution process; the present work discusses the results in the context of SI exhaust dilution. A Scanning Mobility Particle Sizer (SMPS) was used to measure the size distribution, number density, and volume fraction of PM. Temperature measurements in the exhaust pipe and dilution tunnel reveal the degree of mixing between exhaust and dilution air, the effect of flowrate on heat transfer from undiluted and diluted exhaust to the environment, and the minimum permissible dilution ratio for a maximum sample temperature of 52°C. Measurements of PM concentrations as a function of dilution ratio show the competing effects of temperature and particle/vapor concentrations on particle growth dynamics, which result in a range of dilution ratios-from 13 to 18-where the effect of dilution ratio, independent of flowrate, is kept to a minimum. This range of dilution ratios is therefore optimal in order to achieve repeatable PM concentration measurements. Particle dynamics during transit through the tunnel operating at the optimal dilution ratio was found statistically insignificant compared to data scatter. Such small differences in number concentration may be qualitatively representative of particle losses for SI exhaust, but small increases in PM volume fraction during transit through the tunnel may significantly underestimate accretion of mass due to unburned hydrocarbons (HCs) emitted by SI engines. The fraction of SI-derived PM mass due to adsorbed/absorbed vapor, estimated from these data, is consistent with previous chemical analyses of PM. © 1998 Society of Automotive Engineers, Inc.

Semi-insulating layer for novel high voltage polysilicon thin film transistors

This work describes the deposition and characterisation of semi-insulating oxygen-doped silicon films for the development of high voltage polycrystalline silicon (poly-Si) circuitry on glass. The performance of a novel poly-Si High Voltage Thin Film Transistor (HVTFT) structure, incorporating a layer of semi-insulating material, has been investigated using a two dimensional device simulator. The semi-insulating layer increases the operating voltage of the HVTFT structure by linearising the potential distribution in the device offset region. A glass compatible semi-insulating layer, suitable for HVTFT applications, has been deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The as-deposited films are furnace annealed at 600°C which is the maximum process temperature. By varying the N2O/SiH4 ratio the conductivity of the annealed films can be accurately controlled up to a maximum of around 10-7 Ω-1cm-1. Helium dilution of the reactant gases improves both film uniformity and reproducibility. Raman analysis shows the as-deposited and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-Doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties.

Low-temperature (≤600 °C) semi-insulating oxygen-doped silicon films by the PECVD technique for large-area power applications

This work describes the deposition, annealing and characterisation of semi-insulating oxygen-doped silicon films at temperatures compatible with polysilicon circuitry on glass. The semi-insulating layers are deposited by the plasma enhanced chemical vapour deposition technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures at a temperature of 350 °C. The as-deposited films are then furnace annealed at 600 °C which is the maximum process temperature. Raman analysis shows the as-deposited and annealed films to be completely amorphous. The most important deposition variable is the N2O SiH4 gas ratio. By varying the N2O SiH4 ratio the conductivity of the annealed films can be accurately controlled, for the first time, down to a minimum of ≈10-7Ω-1cm-1 where they exhibit a T -1 4 temperature dependence indicative of a hopping conduction mechanism. Helium dilution of the reactant gases is shown to improve both film uniformity and reproducibility. A model for the microstructure of these semi-insulating amorphous oxygen-doped silicon films is proposed to explain the observed physical and electrical properties. © 1995.

Low temperature (≤ 600°C) semi-insulating oxygen-doped silicon films by the PECVD technique for large area power applications

This work describes the annealing and characterisation of semi-insulating oxygen-doped silicon films deposited by the Plasma Enhanced Chemical Vapour Deposition (PECVD) technique from silane (SiH4), nitrous oxide (N2O) and helium (He) gas mixtures. The maximum process temperature is chosen to be compatible with large area polycrystalline silicon (poly-Si) circuitry on glass. The most important deposition variable is shown to be the N2O SiH4 gas ratio. Helium dilution results in improved film uniformity and reproducibility. Raman analysis shows the 'as-deposited' and annealed films to be completely amorphous. A model for the microstructure of these Semi-Insulating Amorphous Oxygen-doped Silicon (SIAOS) films is proposed to explain the observed physical and electrical properties. © 1995.

Material properties and tribological performance of rf-PECVD deposited DLC coatings

Diamond-like carbon (DLC) coatings were deposited on to silicon, glass and metal substrates, using an rf-plasma enhanced chemical vapour deposition (rf-PECVD) process. The resultant film properties were evaluated in respect of material and interfacial property control, based on bias voltage variation and the introduction of inert (He and Ar) and reactive (N2) diluting gases in a CH4 plasma. The analysis techniques used to assess the material properties of the films included AFM, EELS, RBS/ERDA, spectroscopic, electrical, stress, microhardness, and adhesion. These were correlated to the tribological performance of the coatings using wear measurements. The most important observation is that He dilution (>90%) promotes enhanced adhesion with respect to all substrate material studies. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1dilution (>90%) promotes enhanced adhesion with respect to all substrate materials studied. Coatings typically exhibit a microhardness of the order of 10-20 GPa in films 0.1 < d < 2 μm thick, with associated electrical resistivity in the range 108 < ρ < 1012 Ω·cm, coefficient of friction <0.1 and surface RMS roughness as low as 2 A. The results are discussed with respect to surface pre-treatment, ion surface bombardment, interfacial reactivity and changes in plasma gas breakdown processes.

An improved technique to measure axial variation in wall flow along the channels of a diesel particulate filter

A technique to measure wall flow variation in Diesel Particle Filters (DPFs) is described. In a recent paper, it was shown how the flow distribution in DPFs could be measured in a non-destructive manner. This involved measuring the progressive dilution of a tracer gas introduced at the "outlet" channel upstream end. In the present paper, a significant further improvement to this technique is described, in which only a single probe is required, rather than the two of the previous technique. The single, traversable, probe consists of a controllable flow sink, and slightly downstream, a tracer gas supply. By controlling the sink flow rate such that a very small concentration of tracer gas is aspirated into it, the total flow up to that location in the channel is determined. Typical results showing the axial variation in the wall flow for known wall blockage cases are presented. It is suggested that this technique could be used to interpret the soot loading in the filter channels in a non-intrusive way.

Characterisation and fluidisation of synthetic pit latrine sludge

Half of the world’s urban population will live in informal settlements or “slums” by 2030. Affordable urban sanitation presents a unique set of challenges as the lack of space and resources to construct new latrines makes the de-sludging of existing pits necessary and is something that is currently done manually with significant associated health risks. Therefore various mechanised technologies have been developed to facilitate pit emptying, with the majority using a vacuum system to remove material from the top of the pit. However, this results in the gradual accumulation of unpumpable sludge in the pit, which eventually fills the latrine and forces it to be abandoned. This study has developed a method for fluidising unpumpable pit latrine sludge, based on laboratory experiments using a harmless synthetic sludge. Such a sludge consisting of clay and compost was developed to replicate the physical characteristics of pit latrine sludges characterised in Botswana during the 1980s. Undrained shear strength and density are identified as the critical parameters in controlling pumpability and a method of sludge characterisation based on these parameters is reported. In a series of fluidisation tests using a one fifth scale pit emptying device the reduction in sludge shear strength was found to be caused by i) dilution, which increases water content, and ii) remoulding, which involves mechanical agitation to break down the structure of the material. The tests demonstrated that even the strongest of sludges could be rendered “pumpable” by sufficient dilution. Additionally, air injection alone produced a three-fold decrease in strength of consolidated samples as a result of remoulding at constant water content. The implications for sludge treatment and disposal are discussed, and the classification of sludges according to the equipment required to remove them from the latrine is proposed. Possible field tests to estimate sludge density and shear strength are suggested. The feasibility of using low cost vacuum cleaners to replace expensive vane pumps is demonstrated. This offers great potential for the development of affordable pit emptying technologies that can remove significantly stronger sludges than current devices through fluidising the wastes at the bottom of the pit before emptying

The parameter space of graphene chemical vapor deposition on polycrystalline Cu

A systematic study of the parameter space of graphene chemical vapor deposition (CVD) on polycrystalline Cu foils is presented, aiming at a more fundamental process rationale in particular regarding the choice of carbon precursor and mitigation of Cu sublimation. CH 4 as precursor requires H 2 dilution and temperatures ≥1000 °C to keep the Cu surface reduced and yield a high-quality, complete monolayer graphene coverage. The H 2 atmosphere etches as-grown graphene; hence, maintaining a balanced CH 4/H 2 ratio is critical. Such balance is more easily achieved at low-pressure conditions, at which however Cu sublimation reaches deleterious levels. In contrast, C 6H 6 as precursor requires no reactive diluent and consistently gives similar graphene quality at 100-150 °C lower temperatures. The lower process temperature and more robust processing conditions allow the problem of Cu sublimation to be effectively addressed. Graphene formation is not inherently self-limited to a monolayer for any of the precursors. Rather, the higher the supplied carbon chemical potential, the higher the likelihood of film inhomogeneity and primary and secondary multilayer graphene nucleation. For the latter, domain boundaries of the inherently polycrystalline CVD graphene offer pathways for a continued carbon supply to the catalyst. Graphene formation is significantly affected by the Cu crystallography; i.e., the evolution of microstructure and texture of the catalyst template form an integral part of the CVD process. © 2012 American Chemical Society.

On the application of the light-attenuation technique as a tool for non-intrusive buoyancy measurements

This article describes the application of the light-attenuation technique as a tool for measuring dilution occurring in buoyancy-driven flows. Whilst this technique offers the experimental fluid dynamicist the ability to make rapid synoptic buoyancy measurements non-intrusively, its successful application requires careful selection of chemical dye, dye concentration, illumination and optics. After establishing the advantages offered by methylene blue as a dyeing agent, we assess the accuracy of buoyancy measurements made using this technique compared with direct measurements made with density meters. Density measurements obtained using light-attenuation differ from those obtained using the density meter by typically less than 3%. It is hoped that this article will provide useful advice with regards to its implementation in the field of buoyancy-driven flows. © 2011 Elsevier Inc.

DNS of EGR-type turbulent flame in MILD condition

Three-dimensional direct numerical simulation (DNS) of exhaust gas recirculation (EGR)-type turbulent combustion operated in moderate and intense low-oxygen dilution (MILD) condition has been carried out to study the flame structure and flame interaction. In order to achieve adequate EGR-type initial/inlet mixture fields, partially premixed mixture fields which are correlated with the turbulence are carefully preprocessed. The chemical kinetics is modelled using a skeletal mechanism for methane-air combustion. The results suggest that the flame fronts have thin flame structure and the direct link between the mean reaction rate and scalar dissipation rate remains valid in the EGR-type combustion with MILD condition. However, the commonly used canonical flamelet is not fully representative for MILD combustion. During the flame-flame interactions, the heat release rate increases higher than the maximum laminar flame value, while the gradient of progress variable becomes smaller than laminar value. It is also proposed that the reaction rate and the scalar gradient can be used as a marker for the flame interaction. © 2012 The Combustion Institute. Published by Elsevier Inc. All rights reserved.