Large scale heterogeneous networks, the Davis-Wielandt shell, and graph separation

We consider a large scale network of interconnected heterogeneous dynamical components. Scalable stability conditions are derived that involve the input/output properties of individual subsystems and the interconnection matrix. The analysis is based on the Davis-Wielandt shell, a higher dimensional version of the numerical range with important convexity properties. This can be used to allow heterogeneity in the agent dynamics while relaxing normality and symmetry assumptions on the interconnection matrix. The results include small gain and passivity approaches as special cases, with the three dimensional shell shown to be inherently connected with corresponding graph separation arguments. © 2012 Society for Industrial and Applied Mathematics.

Observation of large-scale features on graphite by scanning tunnelling microscopy

Superlattice structures and rippling fringes were imaged on two separate pieces of graphite (HOPG) by scanning tunnelling microscopy (STM). We observed the corrugation conservation phenomenon on one of the superlattice structures where an overlayer does not attenuate the corrugation amplitude of the superlattice. Such a phenomenon may illustrate an implication that nanoscale defects a few layers underneath the surface may propagate through many layers without decay and form the superlattice structure on the topmost surface. Some rippling fringes with periodicities of 20 nm and 30 nm and corrugations of 0.1 nm and 0.15nm were observed in the superlattice area and in nearby regions. Such fringes are believed to be due to physical buckling of the surface. The stress required to generate such structures is estimated, and a possible cause is discussed. An equation relating the attenuation factor to the number of overlayers is proposed. © 2005 The Japan Society of Applied Physics.

Nanoelectromechanical DRAM for ultra-large-scale integration (ULSI)

A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. A vertical nanotube structure is employed to form the electromechanical switch and capacitor structure. The mechanical movement of the nanotube defines 'On' and 'OFF' states and the electrical signals which result lead to charge storage in a vertical capacitor structure as in a traditional DRAM. The vertical structure contributes greatly to a decrease in cell dimension. The main concept of the NEM switch and capacitor can be applied to other memory devices as well. © 2005 IEEE.