Characterization of the surface acoustic wave devices based on ZnO/nanocrystalline diamond structures

Nanocrystalline ZnO films with strong (0002) texture and fine grains were deposited onto ultra-nanocrystalline diamond (UNCD) layers on silicon using high target utilization sputtering technology. The unique characteristic of this sputtering technique allows room temperature growth of smooth ZnO films with a low roughness and low stress at high growth rates. Surface acoustic wave (SAW) devices were fabricated on ZnO/UNCD structure and exhibited good transmission signals with a low insertion loss and a strong side-lobe suppression for the Rayleigh mode SAW. Based on the optimization of the layered structure of the SAW device, a good performance with a coupling coefficient of 5.2% has been realized, promising for improving the microfluidic efficiency in droplet transportation comparing with that of the ZnO/Si SAW device. An optimized temperature coefficient of frequency of -23.4 ppm°C-1 was obtained for the SAW devices with the 2.72 μm-thick ZnO and 1.1 μm-thick UNCD film. Significant thermal effect due to the acoustic heating has been redcued which is related to the temperature stability of the ZnO/UNCD SAW device. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metastability mechanisms in thin film transistors quantitatively resolved using post-stress relaxation of threshold voltage

A new approach is presented to resolve bias-induced metastability mechanisms in hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). The post stress relaxation of threshold voltage (V(T)) was employed to quantitatively distinguish between the charge trapping process in gate dielectric and defect state creation in active layer of transistor. The kinetics of the charge de-trapping from the SiN traps is analytically modeled and a Gaussian distribution of gap states is extracted for the SiN. Indeed, the relaxation in V(T) is in good agreement with the theory underlying the kinetics of charge de-trapping from gate dielectric. For the TFTs used in this work, the charge trapping in the SiN gate dielectric is shown to be the dominant metastability mechanism even at bias stress levels as low as 10 V.

Post-earthquake behaviour of footings employing densification to mitigate liquefaction

In situ densification is a popular technique to protect shallow foundations from the effects of earthquake-induced liquefaction, current design being based on semiempirical rules. Poor understanding of the mechanisms governing the performance of soil-structure systems during and after earthquakes inhibits the use of narrow densified zones, which could contribute to optimise the use of densification if the increase in post-earthquake settlement is restrained. Therefore this paper investigates the long-term behaviour of a footing built on densified ground and surrounded by liquefiable ground, centrifuge experiments being used to identify the mechanisms occurring in the ground during and after a seismic simulation. The differential excess pore pressure generated in the ground during the shaking and the processes of vertical stress concentration and subsequent redistribution observed under the footing dominate the system behaviour. The results enlighten the complex mechanisms determining the post-earthquake settlement when densification is carried out to mitigate liquefaction effects. The improvement in performance resulting from widening the zone of densification is rationally explained which encourages the development of new design concepts that may enhance the future use of densification as a liquefaction resistance measure. © 2007 Thomas Telford Ltd.

Automated Detection of Exposed Reinforcement in Post-Earthquake Safety and Structural Evaluations

The world is at the threshold of emerging technologies, where new systems in construction, materials, and civil and architectural design are poised to make the world better from a structural and construction perspective. Exciting developments, that are too many to name individually, take place yearly, affecting design considerations and construction practices. This edited book brings together modern methods and advances in structural engineering and construction, fulfilling the mission of ISEC Conferences, which is to enhance communication and understanding between structural and construction engineers for successful design and construction of engineering projects. The articles in this book are those accepted for publication and presentation at the 6th International Structural Engineering and Construction Conference in Zurich. The 6th ISEC Conference in Zurich, Switzerland, follows the overwhelming reception and success of previous ISEC conference in Las Vegas, USA in 2009; Melbourne, Australia in 2007; Shunan, Japan in 2005; Rome, Italy in 2003; and Honolulu, USA in 2001. Many topics are covered in this book, ranging from legal affairs and contracting, to innovations and risk analysis in infrastructure projects, analysis and design of structural systems, materials, architecture, and construction. The articles here are a lasting testimony to the excellent research being undertaken around the world. These articles provide a platform for the exchange of ideas, research efforts and networking in the structural engineering and construction communities. We congratulate and thank the authors for these articles that were selected after intensive peer-review, and our gratitude extends to all reviewers and members of the International Technical Committee. It is their combined contributions that have made this book a reality.