The influence of peel angle on the mechanics of peeling flexible adherends with arbitrary load-extension characteristics

The peel test is commonly used to determine the strength of adhesive joints. In its simplest form, a thin flexible strip which has been bonded to a rigid surface is peeled from the substrate at a constant rate and the peeling force which is applied to the debonding surfaces by the tension in the tape is measured. Peeling can be carried out with the peel angle, i.e. the angle made by the peel force with the substrate surface, from any value above about 10° although peeling tests at 90 and 180° are most common. If the tape is sufficiently thin for its bending resistance to be negligibly small then as well as the debonding or decohesion energy associated with the adhesive in and around the point of separation, the relation between the peeling force and the peeling angle is influenced both by the mechanical properties of the tape and any pre-strain locked into the tape during its application to the substrate. The analytic solution for a tape material which can be idealised as elastic perfectly-plastic is well established. Here, we present a more general form of analysis, applicable in principle to any constitutive relation between tape load and tape extension. Non-linearity between load and extension is of increasing significance as the peel angle is decreased: the model presented is consistent with existing equations describing the failure of a lap joint between non-linear materials. The analysis also allows for energy losses within the adhesive layer which themselves may be influenced by both peel rate and peel angle. We have experimentally examined the application of this new analysis to several specific peeling cases including tapes of cellophane, poly-vinyl chloride and PTFE. © 2005 Elsevier Ltd. All rights reserved.

Analytical techniques for indentation of viscoelastic materials

Indentation of linearly viscoelastic materials is explored using elastic-viscoelastic correspondence analysis for both conical-pyramidal and spherical indentation. Boltzmann hereditary integrals are used to generate displacement-time solutions for loading at constant rate and creep following ramp loading. Experimental data for triangle- and trapezoidal-loading are examined for commercially-available polymers and compared with analytical solutions. Emphasis is given to the use of multiple experiments to test the fidelity and predictive capability of the obtained material creep function. Plastic deformation occurs in sharp indentation of glassy polymers and is found to complicate the viscoelastic analysis. A new method is proposed for estimating a material time-constant from peak displacement or hardness data obtained in pyramidal indentation tests performed at different loading rates.

Second-order rate region of constant-composition codes for the multiple-access channel

This paper presents an achievable second-order rate region for the discrete memoryless multiple-access channel. The result is obtained using a random-coding ensemble in which each user's codebook contains codewords of a fixed composition. It is shown that this ensemble performs at least as well as i.i.d. random coding in terms of second-order asymptotics, and an example is given where a strict improvement is observed. © 2013 IEEE.

External-cavity mode-locked quantum-dot laser diodes for low repetition rate, sub-picosecond pulse generation

This paper presents an investigation of the mode-locking performance of a two-section external-cavity mode-locked InGaAs quantum-dot laser diode, focusing on repetition rate, pulse duration and pulse energy. The lowest repetition rate to-date of any passively mode-locked semiconductor laser diode is demonstrated (310 MHz) and a restriction on the pulse energy (at 0.4 pJ) for the shortest pulse durations is identified. Fundamental mode-locking from 310 MHz to 1.1 GHz was investigated, and harmonic mode-locking was achieved up to a repetition rate of 4.4 GHz. Fourier transform limited subpicosecond pulse generation was realized through implementation of an intra-cavity glass etalon, and pulse durations from 930fs to 8.3ps were demonstrated for a repetition rate of 1 GHz. For all investigations, mode-locking with the shortest pulse durations yielded constant pulse energies of ∼0.4 pJ, revealing an independence of the pulse energy on all the mode-locking parameters investigated (cavity configuration, driving conditions, pulse duration, repetition rate, and output power). © 2011 IEEE.

High-density remote plasma sputtering of high-dielectric-constant amorphous hafnium oxide films

Hafnium oxide (HfOx) is a high dielectric constant (k) oxide which has been identified as being suitable for use as the gate dielectric in thin film transistors (TFTs). Amorphous materials are preferred for a gate dielectric, but it has been an ongoing challenge to produce amorphous HfOx while maintaining a high dielectric constant. A technique called high target utilization sputtering (HiTUS) is demonstrated to be capable of depositing high-k amorphous HfOx thin films at room temperature. The plasma is generated in a remote chamber, allowing higher rate deposition of films with minimal ion damage. Compared to a conventional sputtering system, the HiTUS technique allows finer control of the thin film microstructure. Using a conventional reactive rf magnetron sputtering technique, monoclinic nanocrystalline HfOx thin films have been deposited at a rate of ∼1.6nmmin-1 at room temperature, with a resistivity of 1013Ωcm, a breakdown strength of 3.5MVcm-1 and a dielectric constant of ∼18.2. By comparison, using the HiTUS process, amorphous HfOx (x=2.1) thin films which appear to have a cubic-like short-range order have been deposited at a high deposition rate of ∼25nmmin-1 with a high resistivity of 1014Ωcm, a breakdown strength of 3MVcm-1 and a high dielectric constant of ∼30. Two key conditions must be satisfied in the HiTUS system for high-k HfOx to be produced. Firstly, the correct oxygen flow rate is required for a given sputtering rate from the metallic target. Secondly, there must be an absence of energetic oxygen ion bombardment to maintain an amorphous microstructure and a high flux of medium energy species emitted from the metallic sputtering target to induce a cubic-like short range order. This HfOx is very attractive as a dielectric material for large-area electronic applications on flexible substrates. A remote plasma sputtering process (high target utilization sputtering, HiTUS) has been used to deposit amorphous hafnium oxide with a very high dielectric constant (∼30). X-ray diffraction shows that this material has a microstructure in which the atoms have a cubic-like short-range order, whereas radio frequency (rf) magnetron sputtering produced a monoclinic polycrystalline microstructure. This is correlated to the difference in the energetics of remote plasma and rf magnetron sputtering processes. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.