High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

Er3+-doped glass-polymer composite thin films fabricated using combinatorial pulsed laser deposition

Siloxane Polymer exhibits low loss in the 800-1500 nm range which varies between 0.01 and 0.66 dB cm1. It is for such low loss the material is one of the most promising candidates in the application of engineering passive and active optical devices [1, 2]. However, current polymer fabrication techniques do not provide a methodology which allows high structurally solubility of Er3+ ions in siloxane matrix. To address this problem, Yang et al.[3] demonstrated a channel waveguide amplifier with Nd 3+-complex doped polymer, whilst Wong and co-workers[4] employed Yb3+ and Er3+ co-doped polymer hosts for increasing the gain. In some recent research we demonstrated pulsed laser deposition of Er-doped tellurite glass thin films on siloxane polymer coated silica substrates[5]. Here an alternative methodology for multilayer polymer-glass composite thin films using Er3+ - Yb3+ co-doped phosphate modified tellurite (PT) glass and siloxane polymer is proposed by adopting combinatorial pulsed laser deposition (PLD). © 2011 IEEE.

Can frequency diversity provide performance gains for WSNs at 2.4GHz for the fire hydrant to above ground channel

Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology offer the potential for low cost deployment and maintenance compared with conventional wired sensor networks, enabling effective and efficient condition monitoring of aged civil engineering infrastructure. We will address wireless propagation for a below to above ground scenario where one of the wireless nodes is located in a below ground fire hydrant chamber to permit monitoring of the local water distribution network. Frequency Diversity (FD) is one method that can be used to combat the damaging effects of multipath fading and so improve the reliability of radio links. However, no quantitative investigation concerning the potential performance gains from the use of FD at 2.4GHz is available for the outlined scenario. In this paper, we try to answer this question by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor nodes. These measurement results are also compared with those obtained from simulations that employ our Modified 2D Finite-Difference Time-Domain (FDTD) approach. ©2009 IEEE.

Formation of composite organic thin film transistors with nanotubes and nanowires

Plastic electronics is a rapidly expanding topic, much of which has been focused on organic semiconductors. However, it is also of interest to find viable ways to integrate nanomaterials, such as silicon nanowires (SiNWs) and carbon nanotubes (CNTs), into this technology. Here, we present methods of fabrication of composite devices incorporating such nanostructured materials into an organic matrix. We investigate the formation of polymer/CNT composites, for which we use the semiconducting polymer poly(3,3‴-dialkyl-quaterthiophene) (PQT). We also report a method of fabricating polymer/SiNW TFTs, whereby sparse arrays of parallel oriented SiNWs are initially prepared on silicon dioxide substrates from forests of as-grown gold-catalysed SiNWs. Subsequent ink-jet printing of PQT on these arrays produces a polymer/SiNW composite film. We also present the electrical characterization of all composite devices. © 2007 Elsevier B.V. All rights reserved.

Nanometer scale thermal drift of 4Gbit/s uncooled laser for tight-channel-spacing low-cost WDM

A 4Gbit/s directly modulated DBR laser is demonstrated with nanometre scale thermal tuning over an extended 20-70°C temperature range. >40dB side mode suppression over the entire temperature range is achieved. © 2005 Optical Society of America.

Using internal fibre geometry to improve the performance of pin-loaded holes in composite materials

The anisotropic nature of fibre reinforced composites leads to large stress concentrations around pin-loaded holes through standard weave cloths. Proper understanding of how this anisotropic nature affects the load distribution around holes can be utilised to reduce these con-centrations if sufficient thought is given to the internal fibre geometry near to the hole. Such local reinforcements need not be highly complex and can be readily produced without excessive effort, producing significant improvements in performance. © 1996 Kluwer Academic Publishers.