Short-channel polymer field-effect-transistor fabrication using spin-coating-induced edge template and ink-jet printing

A method to fabricate polymer field-effect transistors with submicron channel lengths is described. A thin polymer film is spin coated on a prepatterned resist with a low resolution to create a thickness contrast in the overcoated polymer layer. After plasma and solvent etching, a submicron-sized line structure, which templates the contour of the prepattern, is obtained. A further lift-off process is applied to define source-drain electrodes of transistors. With a combination of ink-jet printing, transistors with channel length down to 400 nm have been fabricated by this method. We show that drive current density increases as expected, while the on/off current ratio 106 is achieved. © 2005 American Institute of Physics.

High resolution cortical bone thickness measurement from clinical CT data.

The distribution of cortical bone in the proximal femur is believed to be a critical component in determining fracture resistance. Current CT technology is limited in its ability to measure cortical thickness, especially in the sub-millimetre range which lies within the point spread function of today's clinical scanners. In this paper, we present a novel technique that is capable of producing unbiased thickness estimates down to 0.3mm. The technique relies on a mathematical model of the anatomy and the imaging system, which is fitted to the data at a large number of sites around the proximal femur, producing around 17,000 independent thickness estimates per specimen. In a series of experiments on 16 cadaveric femurs, estimation errors were measured as -0.01+/-0.58mm (mean+/-1std.dev.) for cortical thicknesses in the range 0.3-4mm. This compares with 0.25+/-0.69mm for simple thresholding and 0.90+/-0.92mm for a variant of the 50% relative threshold method. In the clinically relevant sub-millimetre range, thresholding increasingly fails to detect the cortex at all, whereas the new technique continues to perform well. The many cortical thickness estimates can be displayed as a colour map painted onto the femoral surface. Computation of the surfaces and colour maps is largely automatic, requiring around 15min on a modest laptop computer.

Can frequency diversity provide performance gains for WSNs at 2.4GHz for the fire hydrant to above ground channel

Wireless Sensor Networks (WSNs) which utilise IEEE 802.15.4 technology offer the potential for low cost deployment and maintenance compared with conventional wired sensor networks, enabling effective and efficient condition monitoring of aged civil engineering infrastructure. We will address wireless propagation for a below to above ground scenario where one of the wireless nodes is located in a below ground fire hydrant chamber to permit monitoring of the local water distribution network. Frequency Diversity (FD) is one method that can be used to combat the damaging effects of multipath fading and so improve the reliability of radio links. However, no quantitative investigation concerning the potential performance gains from the use of FD at 2.4GHz is available for the outlined scenario. In this paper, we try to answer this question by performing accurate propagation measurements using modified and calibrated off-the-shelf 802.15.4 based sensor nodes. These measurement results are also compared with those obtained from simulations that employ our Modified 2D Finite-Difference Time-Domain (FDTD) approach. ©2009 IEEE.

High performance nanocomposite thin film transistors with bilayer carbon nanotube-polythiophene active channel by ink-jet printing

Nanocomposite thin film transistors (TFTs) based on nonpercolating networks of single-walled carbon nanotubes (CNTs) and polythiophene semiconductor [poly [5, 5′ -bis(3-dodecyl-2-thienyl)- 2, 2′ -bithiophene] (PQT-12)] thin film hosts are demonstrated by ink-jet printing. A systematic study on the effect of CNT loading on the transistor performance and channel morphology is conducted. With an appropriate loading of CNTs into the active channel, ink-jet printed composite transistors show an effective hole mobility of 0.23 cm 2 V-1 s-1, which is an enhancement of more than a factor of 7 over ink-jet printed pristine PQT-12 TFTs. In addition, these devices display reasonable on/off current ratio of 105-10 6, low off currents of the order of 10 pA, and a sharp subthreshold slope (<0.8 V dec-1). The work presented here furthers our understanding of the interaction between polythiophene polymers and nonpercolating CNTs, where the CNT density in the bilayer structure substantially influences the morphology and transistor performance of polythiophene. Therefore, optimized loading of ink-jet printed CNTs is crucial to achieve device performance enhancement. High performance ink-jet printed nanocomposite TFTs can present a promising alternative to organic TFTs in printed electronic applications, including displays, sensors, radio-frequency identification (RFID) tags, and disposable electronics. © 2009 American Institute of Physics.

Nanometer scale thermal drift of 4Gbit/s uncooled laser for tight-channel-spacing low-cost WDM

A 4Gbit/s directly modulated DBR laser is demonstrated with nanometre scale thermal tuning over an extended 20-70°C temperature range. >40dB side mode suppression over the entire temperature range is achieved. © 2005 Optical Society of America.

Multi-channel signal separation

The separation of independent sources from mixed observed data is a fundamental and challenging problem. In many practical situations, observations may be modelled as linear mixtures of a number of source signals, i.e. a linear multi-input multi-output system. A typical example is speech recordings made in an acoustic environment in the presence of background noise and/or competing speakers. Other examples include EEG signals, passive sonar applications and cross-talk in data communications. In this paper, we propose iterative algorithms to solve the n × n linear time invariant system under two different constraints. Some existing solutions for 2 × 2 systems are reviewed and compared.

Thickness of the near-interface regions and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films

Thickness of the near-interface regions (NIR) and central bulk ohmic resistivity in lead lanthanum zirconate titanate ferroelectric thin films were investigated. A method to separate the low-resistive near-interface regions (NIRs) from the high-resistive central bulk region (CBR) in ferroelectric thin films was presented. Results showed that the thickness of the NIRs depended on the electrode materials in use and the CBR resistivity depended on the impurity doping levels.

Effect of thickness on the magnetic properties of melt-processed YBCO thick films

The magnetic properties of melt-processed YBa2Cu3O7-δ thick films have been measured and correlated with features in the microstructure at 4.2 and 77 K for film thicknesses between 50 and 140 μm. A qualitative model for the volume magnetization of the films at 4.2 K is proposed in terms of the individual contributions from intra H-S grain, inter H-S grain and granular Jc components.

Advantages of top-gate, high-k dielectric carbon nanotube field-effect transistors

The subthreshold slope, transconductance, threshold voltage, and hysteresis of a carbon nanotube field-effect transistor (CNT FET) were examined as its configuration was changed from bottom-gate exposed channel, bottom-gate covered channel to top-gate FET. An individual single wall CNT was grown by chemical vapor deposition and its gate configuration was changed while determining its transistor characteristics to ensure that the measurements were not a function of different chirality or diameter CNTs. The bottom-gate exposed CNT FET utilized 900 nm SiO2 as the gate insulator. This CNT FET was then covered with TiO2 to form the bottom-gate covered channel CNT FET. Finally, the top-gate CNT FET was fabricated and the device utilized TiO 2 (K ∼ 80, equivalent oxide thickness=0.25 nm) as the gate insulator. Of the three configurations investigated, the top-gate device exhibited best subthreshold slope (67-70 mV/dec), highest transconductance (1.3 μS), and negligible hysteresis in terms of threshold voltage shift. © 2006 American Institute of Physics.