Non-destructive optical characterization of phase separation in bulk heterojunction organic photovoltaic cells

The dithiophene donor-acceptor copolymers that are bridged either with carbon (C-PCPDTBT) or silicon atoms (Si-PCPDTBT) belong to a promising family of materials for use in photoactive layers for organic photovoltaic cells (OPVs). In this work, we implement the non-destructive Spectroscopic Ellipsometry technique in the near infrared to the far ultraviolet spectral region in combination with advanced theoretical modeling to investigate the vertical distribution of the C-PCPDTBT and Si-PCPDTBT polymer and fullerene ([6,6]-phenyl C71-butyric acid methyl ester - PC70BM) phases in the blend, as well as the effect of the polymer-to-fullerene ratio on the distribution mechanism. It was found that the C-PCPDTBT:PC70BM blends have donor-enriched top regions and acceptor-enriched bottom regions, whereas the donor and acceptor phases are more homogeneously intermixed in the Si-PCPDTBT:PC70BM blends. We suggest that the chemical incompatibility of the two phases as expressed by the difference in their surface energy, may be a key element in promoting the segregation of the lower surface phase to the top region of the photoactive layer. We found that the increase of the photoactive layer thickness reduces the polymer enrichment at the cathode, producing a more homogeneous phase distribution of donor and acceptor in the bulk that leads to the increase of the OPV efficiency. © 2014 Elsevier B.V.

Bias-dependent recovery time of all-optical resonant nonlinearity in InGaAsP/InGaAsP MQW waveguide

We have investigated a resonant refractive nonlinearity in a semiconductor waveguide by measuring intensity dependent phase shifts and bias-dependent recovery times. The measurements were performed on an optimized 750-μm-long AR coated buried heterostructure MQW p-i-n waveguide with a bandedge at 1.48 μm. Figure 1 shows the experimental arrangement. The mode-locked color center laser was tuned to 50 meV beyond the bandedge and 8 ps pulses with peak incident power up to 57 W were coupled into the waveguide. Some residual bandtail absorption remains at this wavelength and this is sufficient to cause carriers to be photogenerated and these give rise to a refractive nonlinearity, predominantly by plasma and bandfilling effects. A Fabry-Perot interferometer is used to measure the spectrum of the light which exits the waveguide. The nonlinearity within the guide causes self phase modulation (SPM) of the light and a study of the spectrum allows information to be recovered on the magnitude and recovery time of the nonlinear phase shift with a reasonable degree of accuracy. SPM spectra were recorded for a variety of pulse energies coupled into he unbiased waveguide. Figure 2 shows the resultant phase shift measured from the SPM spectra as a function of pulse energy. The relationship is a linear one, indicating that no saturation of the nonlinearity occurs for coupled pulse energies up to 230 pJ. A π phase shift, the minimum necessary for an all-optical switch, is obtained for a coupled pulse energy of 57 pJ while the maximum phase shift, 4 π, was measured for 230 pJ. The SPM spectra were highly asymmetric with pulse energy shifted to higher frequencies. Such spectra are characteristic of a slow, negative nonlinearity. This relatively slow speed is expected for the unbiased guide as the recovery time will be of the order of the recombination time of the photogenerated electrons, about 1 ns for InGaAsP material. In order to reduce the recovery time of the nonlinearity, it is necessary to remove the photogenerated carriers from the waveguide by a process other than recombination. One such technique is to apply a reverse bias to the waveguide in order to sweep the carriers out. Figure 3 shows the effect on the recovery time of the nonlinearity of applying reverse bias to the waveguide for 230 pJ coupled power. The recovery time was reduced from one much longer than the length of the pulse, estimated to be about 1 ns, at zero bias to 18 ± 3 ps for a bias voltage greater than -4 V. This compares with a value of 24 ps obtained in a bulk waveguide.

Thin film shape memory alloys for optical sensing applications

Based on shape memory effect of the sputtered thin film shape memory alloys, different types of micromirror structures were designed and fabricated for optical sensing application. Using surface micromachining, TiNi membrane mirror structure has been fabricated, which can be actuated based on intrinsic two-way shape memory effect of the free-standing TiNi film. Using bulk micromachining, TiNi/Si and TiNi/Si 3N 4microcantilever mirror structures were fabricated. © 2007 IOP Publishing Ltd.

Magneto-Optical Imaging of Superconductors for Liquid Hydrogen Applications

Restricted deposits of fossil fuels and ecological problems created by their extensive use require a transition to renewable energy resources and clean fuel free from emissions of CO2. This fuel is likely to be liquid hydrogen. An important feature of liquid hydrogen is that it allows wide use of superconductivity. Superconductors provide compactness, high efficiency, savings in energy and a range of new applications not possible with other materials. The benefits of superconductivity justify use of low temperatures and facilitate development of fossil-free energy economy. The widespread use of superconductors requires a simple and reliable technique to monitor their properties. Magneto-optical imaging (MOI) is currently the only direct technique allowing visualization of the superconducting properties of materials. We report the application of this technique to key superconducting materials suitable for the hydrogen economy: MgB2 and high temperature superconductors (HTS) in bulk and thin-film form. The study shows that the MOI technique is well suited to the study of these materials. It demonstrates the advantage of HTS at liquid hydrogen temperatures and emphasizes the benefits of MgB2, in particular. © 2012 Springer Science+Business Media New York.

Measurement of the magnetic field inside the holes of a drilled bulk high-Tc superconductor

We use macroscopic holes drilled in a bulk YBCO superconductor to probe its magnetic properties in the volume of the sample. The sample is subjected to an AC magnetic flux with a density ranging from 30mT to 130mT and the flux in the superconductor is probed by miniature coils inserted in the holes. In a given hole, three different penetration regimes can be observed: (i) the shielded regime, where no magnetic flux threads the hole; (ii) the gradual penetration regime, where the waveform of the magnetic field has a clipped sine shape whose fundamental component scales with the applied field; and (iii) the flux concentration regime, where the waveform of the magnetic field is nearly a sine wave, with an amplitude exceeding that of the applied field by up to a factor of two. The distribution of the penetration regimes in the holes is compared with that of the magnetic flux density at the top and bottom surfaces of the sample, and is interpreted with the help of optical polarized light micrographs of these surfaces. We show that the measurement of the magnetic field inside the holes can be used as a local characterization of the bulk magnetic properties of the sample.