The parameter space of graphene chemical vapor deposition on polycrystalline Cu

A systematic study of the parameter space of graphene chemical vapor deposition (CVD) on polycrystalline Cu foils is presented, aiming at a more fundamental process rationale in particular regarding the choice of carbon precursor and mitigation of Cu sublimation. CH 4 as precursor requires H 2 dilution and temperatures ≥1000 °C to keep the Cu surface reduced and yield a high-quality, complete monolayer graphene coverage. The H 2 atmosphere etches as-grown graphene; hence, maintaining a balanced CH 4/H 2 ratio is critical. Such balance is more easily achieved at low-pressure conditions, at which however Cu sublimation reaches deleterious levels. In contrast, C 6H 6 as precursor requires no reactive diluent and consistently gives similar graphene quality at 100-150 °C lower temperatures. The lower process temperature and more robust processing conditions allow the problem of Cu sublimation to be effectively addressed. Graphene formation is not inherently self-limited to a monolayer for any of the precursors. Rather, the higher the supplied carbon chemical potential, the higher the likelihood of film inhomogeneity and primary and secondary multilayer graphene nucleation. For the latter, domain boundaries of the inherently polycrystalline CVD graphene offer pathways for a continued carbon supply to the catalyst. Graphene formation is significantly affected by the Cu crystallography; i.e., the evolution of microstructure and texture of the catalyst template form an integral part of the CVD process. © 2012 American Chemical Society.

THE SENSITIVITY OF 2D COMPRESSOR INCIDENCE RANGE TO IN-SERVICE GEOMETRIC VARIATION

The loss mechanisms which control 2D incidence range are discussed with an emphasis on determining which real in-service geometric variations will have the largest impact. For the majority of engine compressor blades (Minlet>0.55) both the negative and positive incidence limits are controlled by supersonic patches. It is shown that these patches are highly sensitive to the geometric variations close to, and around the leading edge. The variations used in this study were measured from newly manufactured as well as ex-service blades. Over most the high pressure compressor considered, it was shown that manufacture variations dominated. The first part of the paper shows that, despite large geometric variations (~10% of leading edge thickness), the incidence range responded in a linear way. The result of this is that the geometric variations have little effect on the mean incidence range of a row of blades. In the second part of the paper a region of the design space is identified where non-linear behavior can result in a 10% reduction in positive incidence range. The mechanism for this is reported and design guidelines for its avoidance offered. In the final part of the paper, the linear behavior at negative incidence and the transonic nature of the flow is exploited to design a robust asymmetric leading edge with a 5% increase in incidence range.

Development of the 2003 CU-HTK conversational telephone speech transcription system

This paper describes the development of the 2003 CU-HTK large vocabulary speech recognition system for Conversational Telephone Speech (CTS). The system was designed based on a multi-pass, multi-branch structure where the output of all branches is combined using system combination. A number of advanced modelling techniques such as Speaker Adaptive Training, Heteroscedastic Linear Discriminant Analysis, Minimum Phone Error estimation and specially constructed Single Pronunciation dictionaries were employed. The effectiveness of each of these techniques and their potential contribution to the result of system combination was evaluated in the framework of a state-of-the-art LVCSR system with sophisticated adaptation. The final 2003 CU-HTK CTS system constructed from some of these models is described and its performance on the DARPA/NIST 2003 Rich Transcription (RT-03) evaluation test set is discussed.