Preliminary laboratory-scale model auger installation and testing of carbonated soil-MgO columns

This paper presents details of the installation and performance of carbonated soil-MgO columns using a laboratory-scale model auger setup. MgO grout was mixed with the soil using the auger and the columns were then carbonated with gaseous CO2 introduced in two different ways: one using auger mixing and the other through a perforated plastic tube system inserted into the treated column. The performance of the columns in terms of unconfined compressive strength (UCS), stiffness, strain at failure and microstructure (using X-ray diffraction and scanning electron microscopy) showed that the soil-MgO columns were carbonated very quickly (in under 1 h) and yielded relatively high strength values, of 2.4-9.4 MPa, which on average were five times that of corresponding 28-day ambient cured uncarbonated columns. This confirmed, together with observations of dense microstructure and hydrated magnesium carbonates, that a good degree of carbonation had taken place. The results also showed that the carbonation method and period have a significant effect on the resulting performance, with the carbonation through the perforated pipe producing the best results. Copyright © 2013 by ASTM International.

Nonequilibrium dynamics of photoexcited electrons in graphene: Collinear scattering, Auger processes, and the impact of screening

We present a combined analytical and numerical study of the early stages (sub-100-fs) of the nonequilibrium dynamics of photoexcited electrons in graphene. We employ the semiclassical Boltzmann equation with a collision integral that includes contributions from electron-electron (e-e) and electron-optical phonon interactions. Taking advantage of circular symmetry and employing the massless Dirac fermion (MDF) Hamiltonian, we are able to perform an essentially analytical study of the e-e contribution to the collision integral. This allows us to take particular care of subtle collinear scattering processes - processes in which incoming and outgoing momenta of the scattering particles lie on the same line - including carrier multiplication (CM) and Auger recombination (AR). These processes have a vanishing phase space for two-dimensional MDF bare bands. However, we argue that electron-lifetime effects, seen in experiments based on angle-resolved photoemission spectroscopy, provide a natural pathway to regularize this pathology, yielding a finite contribution due to CM and AR to the Coulomb collision integral. Finally, we discuss in detail the role of physics beyond the Fermi golden rule by including screening in the matrix element of the Coulomb interaction at the level of the random phase approximation (RPA), focusing in particular on the consequences of various approximations including static RPA screening, which maximizes the impact of CM and AR processes, and dynamical RPA screening, which completely suppresses them. © 2013 American Physical Society.

Characterization of the temperature sensitivity of gain and recombination mechanisms in 1.3-μm AlGaInAs MQW lasers

The potential of 1.3-μm AlGaInAs multiple quantum-well (MQW) laser diodes for uncooled operation in high-speed optical communication systems is experimentally evaluated by characterizing the temperature dependence of key parameters such as the threshold current, transparency current density, optical gain and carrier lifetime. Detailed measurements performed in the 20°C-100°C temperature range indicate a localized T0 value of 68 K at 98°C for a device with a 2.8μm ridge width and 700-μm cavity length. The transparency current density is measured for temperatures from 20°C to 60°C and found to increase at a rate of 7.7 A·cm -2 · °C-1. Optical gain characterizations show that the peak modal gain at threshold is independent of temperature, whereas the differential gain decreases linearly with temperature at a rate of 3 × 10-4 A-1·°C-1. The differential carrier lifetime is determined from electrical impedance measurements and found to decrease with temperature. From the measured carrier lifetime we derive the monomolecular (A), radiative (B), and nonradiative Auger (C) recombination coefficients and determine their temperature dependence in the 20 °C-80 °C range. Our study shows that A is temperature independent, B decreases with temperature, and C exhibits a less pronounced increase with temperature. The experimental observations are discussed and compared with theoretical predictions and measurements performed on other material systems. © 2005 IEEE.

Potential tuning of porous silicon luminescence

Electrochemical investigations were conducted of the effect of potential on the luminescence of porous silico (PS). The use of liquid contacts allows the potential to be controlled during studies of the photoluminescence (PL) and electroluminescence (EI). The PL and EL of PS samples prepared from n-type substrates is considered. To obtain luminescence from such PS it is necessary to generate holes in the valence band. This is achieved by either photoexcitation or an electrochemical process involving the reduction of persulfate. This paper describes the investigations of the effect of potential on the PL and EL of PS. A mechanism of 'potential tuning' based on electron occupancy and Auger quenching is then proposed.

Analysis of the mechanisms for impaired high-temperature, high-speed performance of 1.3 μm InGaAsP lasers

In this paper, the static and dynamic performance of multi quantum-well (MQW) 1.3 μm InGaAsP Fabry Perot lasers is assessed experimentally and theoretically to identify the mechanisms responsible for impaired high speed performance at elevated temperature. Initially, threshold currents and spontaneous emission spectra are characterized for a range of temperatures from room temperature to 85 °C to indicate a significant increase in non-radiative current contributions. Preliminary estimates are made for the contributions of leakage and Auger recombination rates, found from the dependence of integrated spontaneous emission with carrier density. Drift-diffusion modelling is found to accurately predict the trend of threshold currents over temperature. Using gain modelling good agreement is found between the measured and predicted integrated spontaneous emission intensity. Gain measurements at 85 °C indicate a reduction in RIN frequency to 63% of the 25 °C value which matches well with experimental small signal performance.

Influence of the matrix properties on the performances of Er-doped Si nanoclusters light emitting devices

We investigated the properties of light emitting devices whose active layer consists of Er-doped Si nanoclusters (nc) generated by thermal annealing of Er-doped SiOx layers prepared by magnetron cosputtering. Differently from a widely used technique such as plasma enhanced chemical vapor deposition, sputtering allows to synthesize Er-doped Si nc embedded in an almost stoichiometric oxide matrix, so as to deeply influence the electroluminescence properties of the devices. Relevant results include the need for an unexpected low Si excess for optimizing the device efficiency and, above all, the strong reduction of the influence of Auger de-excitation, which represents the main nonradiative path which limits the performances of such devices and their application in silicon nanophotonics. © 2010 American Institute of Physics.