Application of electron beams in thermal processing of semiconductor materials and devices

Rapid and effective thermal processing methods using electron beams are described in this paper. Heating times ranging from a fraction of a second to several seconds and temperatures up to 1400°C are attainable. Applications such as the annealing of ion implanted material, both without significant dopant diffusion and with highly controlled diffusion of impurities, are described. The technique has been used successfully to activate source/drain regions for fine geometry NMOS transistors. It is shown that electron beams can produce localised heating of semiconductor substrates and a resolution of approximately 1 μm has been achieved. Electron beam heating has been applied to improving the crystalline quality of silicon-on sapphire used in CMOS device fabrication. Silicon layers with defect levels approaching bulk material have been obtained. Finally, the combination of isothermal and selective annealing is shown to have application in recrystallisation of polysilicon films on an insulating layer. The approach provides the opportunity of producing a silicon-on-insulator substrate with improved crystalline quality compared to silicon-on-sapphire at a potentially lower cost. It is suggested that rapid heating methods are expected to provide a real alternative to conventional furnace processing of semiconductor devices in the development of fabrication technology. © 1984 Benn electronics Publications Ltd, Luton.

Application of a laminar flamelet model to confined explosion hazards

The majority of computational studies of confined explosion hazards apply simple and inaccurate combustion models, requiring ad hoc corrections to obtain realistic flame shapes and often predicting an order of magnitude error in the overpressures. This work describes the application of a laminar flamelet model to a series of two-dimensional test cases. The model is computationally efficient applying an algebraic expression to calculate the flame surface area, an empirical correlation for the laminar flame speed and a novel unstructured, solution adaptive numerical grid system which allows important features of the solution to be resolved close to the flame. Accurate flame shapes are predicted, the correct burning rate is predicted near the walls, and an improvement in the predicted overpressures is obtained. However, in these fully turbulent calculations the overpressures are still too high and the flame arrival times too low, indicating the need for a model for the early laminar burning phase. Due to the computational expense, it is unrealistic to model a laminar flame in the complex geometries involved and therefore a pragmatic approach is employed which constrains the flame to propagate at the laminar flame speed. Transition to turbulent burning occurs at a specified turbulent Reynolds number. With the laminar phase model included, the predicted flame arrival times increase significantly, but are still too low. However, this has no significant effect on the overpressures, which are predicted accurately for a baffled channel test case where rapid transition occurs once the flame reaches the first pair of baffles. In a channel with obstacles on the centreline, transition is more gradual and the accuracy of the predicted overpressures is reduced. However, although the accuracy is still less than desirable in some cases, it is much better than the order of magnitude error previously expected.