The descriptive epidemiology of congenital and acquired cryptorchidism in a UK infant cohort.

INTRODUCTION: Recent studies in other European countries suggest that the prevalence of congenital cryptorchidism continues to increase. This study aimed to explore the prevalence and natural history of congenital cryptorchidism in a UK centre. METHODS: Between October 2001 and July 2008, 784 male infants were born in the prospective Cambridge Baby Growth Study. 742 infants were examined by trained research nurses at birth; testicular position was assessed using standard techniques. Follow-up assessments were completed at ages 3, 12, 18 and 24 months in 615, 462, 393 and 326 infants, respectively. RESULTS: The prevalence of cryptorchidism at birth was 5.9% (95% CI 4.4% to 7.9%). Congenital cryptorchidism was associated with earlier gestational age (p<0.001), lower birth weight (p<0.001), birth length (p<0.001) and shorter penile length at birth (p<0.0001) compared with other infants, but normal size after age 3 months. The prevalence of cryptorchidism declined to 2.4% at 3 months, but unexpectedly rose again to 6.7% at 12 months as a result of new cases. The cumulative incidence of "acquired cryptorchidism" by age 24 months was 7.0% and these cases had shorter penile length during infancy than other infants (p = 0.003). CONCLUSIONS: The prevalence of congenital cryptorchidism was higher than earlier estimates in UK populations. Furthermore, this study for the first time describes acquired cryptorchidism or "ascending testis" as a common entity in male infants, which is possibly associated with reduced early postnatal androgen activity.

Characterization of defect removal in hydrogenated and deuterated amorphous silicon thin film transistors

Thin film transistors (TFTs) utilizing an hydrogenated amorphous silicon (a-Si:H) channel layer exhibit a shift in the threshold voltage with time under the application of a gate bias voltage due to the creation of metastable defects. These defects are removed by annealing the device with zero gate bias applied. The defect removal process can be characterized by a thermalization energy which is, in turn, dependent upon an attempt-to-escape frequency for defect removal. The threshold voltage of both hydrogenated and deuterated amorphous silicon (a-Si:D) TFTs has been measured as a function of annealing time and temperature. Using a molecular dynamics simulation of hydrogen and deuterium in a silicon network in the H2 * configuration, it is shown that the experimental results are consistent with an attempt-to-escape frequency of (4.4 ± 0.3) × 1013 Hz and (5.7 ± 0.3) × 1013 Hz for a-Si:H and a-Si:D respectively which is attributed to the oscillation of the Si-H and Si-D bonds. Using this approach, it becomes possible to describe defect removal in hydrogenated and deuterated material by the thermalization energies of (1.552 ± 0.003) eV and (1.559 ± 0.003) eV respectively. This correlates with the energy per atom of the Si-H and Si-D bonds. © 2006 Elsevier B.V. All rights reserved.