Polarisation dependent all-optical nonlinearity far from the bandedge in active GaAs/AlGaAs quantum well waveguides

This paper describes a measurement on a GaAs quantum well waveguide with a high built in field across the quantum wells at a wavelength far from the bandedge. The device structure used for the measurement has been fabricated at STC Technology Ltd and is that of a standard laser ridge structure. In fabrication double heterostructure layers are grown on a [001] n + GaAs substrate, with the active region containing two intrinsic GaAs quantum wells of 10nm thickness separated by 10nm. A 4μm wide ridge is etched to provide transverse optical guiding. The experimental work has involved the use of 1.06μm wavelength light from a Q-switched Nd:YAG laser. Any induced change in refractive index is determined by measuring the change in transmission of the quantum well waveguide Fabry-Perot cavity. The waveguide is placed on a Peltier temperature controller to allow thermal tuning.

Changes in the Mg profile and in dislocations induced by high temperature annealing of blue LEDs

The efficiency of the injection and recombination processes in InGaN/GaN LEDs is governed by the properties of the active region of the devices, which strongly depend on the conditions used for the growth of the epitaxial material. To improve device quality, it is very important to understand how the high temperatures used during the growth process can modify the quality of the epitaxial material. With this paper we present a study of the modifications in the properties of InGaN/GaN LED structures induced by high temperature annealing: thermal stress tests were carried out at 900 °C, in nitrogen atmosphere, on selected samples. The efficiency and the recombination dynamics were evaluated by photoluminescence measurements (both integrated and time-resolved), while the properties of the epitaxial material were studied by Secondary Ion Mass Spectroscopy (SIMS) and Rutherford Backscattering (RBS) channeling measurements. Results indicate that exposure to high temperatures may lead to: (i) a significant increase in the photoluminescence efficiency of the devices; (ii) a decrease in the parasitic emission bands located between 380 nm and 400 nm; (iii) an increase in carrier lifetime, as detected by time-resolved photoluminescence measurements. The increase in device efficiency is tentatively ascribed to an improvement in the crystallographic quality of the samples. © 2013 SPIE.

Enhanced efficiency of near-UV emitting LEDs for solid-state lighting applications

The performance of a series of near-UV (∼385 nm) emitting LEDs, consisting of high efficiency InGaN/AlInGaN QWs in the active region, was investigated. Significantly reduced roll-over of efficiency at high current density was found compared to InGaN/GaN LEDs emitting at a similar wavelength. The importance of optical cavity effects in flip-chip geometry devices has also been investigated. The light output was enhanced by more than a factor of 2 when the lightemitting region was located at an anti-node position with respect to a high reflectivity current injection mirror. A power of 0.49 mW into a numerical aperture of 0.5 was obtained for a junction area of 50μm in diameter and a current of 30 mA, corresponding to a radiance of 30 W/cm2/str.

High-efficiency InGaN/GaN quantum well structures on large area silicon substrates

The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiN x interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiN x interlayer at the interface about 2nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

A fast 600-V Tandem PiN Schottky (TPS) rectifier with ultra-low on-state voltage

The Tandem PiN Schottky (TPS) rectifier features lowly-doped p-layers in both active and termination regions, and is applied in 600-V rating for the first time. In the active region, the Schottky contact is in series connection with a transparent p-layer, leading to a superior forward performance than the conventional diodes. In addition, due to the benefit of moderate hole injection from the p-layer, the TPS offers a better trade-off between the on-state voltage and the switching speed. The active p-layer also helps to stabilise the Schottky contact, and hence the electrical data distributions are more concentrated. Regarding the floating p-layer in the termination region, its purpose is to reduce the peak electric fields, and the TPS demonstrates a high breakdown voltage with a compact termination width, less than 70% of the state-of-the-art devices on the market. Experimental results have shown that the 600-V TPS rectifier has an ultra-low on-state voltage of 0.98 V at 250 A/cm 2, a fast turn-off time of 75 ns by the standard RG1 test (I F=0.5A, I R=1A, and I RR=0.25A) and a breakdown voltage over 720 V. It is noteworthy that the p-layers in the active and termination regions can be formed at no extra cost for the use of self-alignment process. © 2012 IEEE.

Quantum dots and nanowires for photonics applications

We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective-area metal organic chemical vapor deposition (MOCVD) is used to grow the active region with quantum dots emitting at different wavelengths for fabrication of the integrated devices. We will also review the structural and optical properties of III-V nanowires, and axial and radial nanowire heterostructures grown by MOCVD. In addition to binary nanowires, such as GaAs, InAs, and InP, we have demonstrated ternary InGaAs and AlGaAs nanowires. Core-shell nanowires consisting of GaAs cores with AlGaAs shells, and core-multishell nanowires with several alternating shells of AlGaAs and GaAs, exhibit strong photoluminescence. Axial segments of InGaAs have been incorporated within GaAs nanowires to form GaAs/InGaAs nanowire superlattices.

Critical current anisotropy in high temperature superconductors

After nearly 15 years of research effort, High Temperature Superconductors (HTS) are finding a wide range of practical applications. A clear understanding of the factors controlling the current carrying capacity of these materials is a prerequisite to their successful technological development. The critical current density (Jc) in HTS is directly dependent on the structure and pinning of the Flux Line Lattice (FLL) in these materials. This thesis presents an investigation of the Jc anisotropy in HTS. The use of thin films grown on off c-axis (vicinal) substrates allowed the effect of current directions outside the cuprate planes to be studied. With this experimental geometry Berghuis, et al. (Phys. Rev. Lett. 79, 12, pg. 2332) observed a striking flux channelling effect in vicinal YBa2Cu3O7-δ (YBCO) films. By confirming, and extending, this observation, it is demonstrated that this is an intrinsic effect. The results obtained, appear to fit well with the predictions of a field angle dependent cross-over from a three dimensional rectilinear FLL to a kinked lattice of strings and pancakes. The pinning force density for movement of strings inside the cuprate planes is considerably less than that on vortex pancake elements. When the FLL is entirely string-like this reduced pinning leads to the observed channelling minima. It is observed that anti-phase boundaries enhance the Jc in vicinal YBCO films by strongly pinning vortex strings. The effect on the FLL structure cross-over of increasing anisotropy has been elucidated using de-oxygenated vicinal YBCO films. Intriguingly, the counter intuitive prediction that the range of applied field angle for which the kinked lattice is fully developed reduces with increasing anisotropy, appears to be confirmed. Although vortex channelling cannot be observed in c-axis YBCO films, the pinning force density for vortex string channelling has been extracted by observing string dragging. By studying the effect of rotating the applied field at a constant angle to the cuprate planes, it is possible to observe the cross-over into the string pancake regime in c-axis films. In the 3D region, the observed behaviour is well explained by the anisotropic Ginzburg-Landau model. Measurements were also made on thin films of the much more anisotropic Bi 2Sr2CaCu2O8+x material, grown on vicinal substrates. The absence of any flux channelling effect and clear adherence to the expected Kes-Law behaviour in the observed Jc characteristics does not provide evidence for the existence of the predicted ‘crossing lattice’ in Bi 2Sr2CaCu2O8+x .

Conduction bottleneck in silicon nanochain single electron transistors operating at room temperature

Single electron transistors are fabricated on single Si nanochains, synthesised by thermal evaporation of SiO solid sources. The nanochains consist of one-dimensional arrays of ~10nm Si nanocrystals, separated by SiO 2 regions. At 300 K, strong Coulomb staircases are seen in the drain-source current-voltage (I ds-V ds) characteristics, and single-electron oscillations are seen in the drain-source current-gate voltage (I ds-V ds) characteristics. From 300-20 K, a large increase in the Coulomb blockade region is observed. The characteristics are explained using singleelectron Monte Carlo simulation, where an inhomogeneous multiple tunnel junction represents a nanochain. Any reduction in capacitance at a nanocrystal well within the nanochain creates a conduction " bottleneck", suppressing current at low voltage and improving the Coulomb staircase. The single-electron charging energy at such an island can be very high, ~20k BT at 300 K. © 2012 The Japan Society of Applied Physics.

Measurements and calculations of transport AC loss in second generation high temperature superconducting pancake coils

Theoretical and experimental AC loss data on a superconducting pancake coil wound using second generation (2 G) conductors are presented. An anisotropic critical state model is used to calculate critical current and the AC losses of a superconducting pancake coil. In the coil there are two regions, the critical state region and the subcritical region. The model assumes that in the subcritical region the flux lines are parallel to the tape wide face. AC losses of the superconducting pancake coil are calculated using this model. Both calorimetric and electrical techniques were used to measure AC losses in the coil. The calorimetric method is based on measuring the boil-off rate of liquid nitrogen. The electric method used a compensation circuit to eliminate the inductive component to measure the loss voltage of the coil. The experimental results are consistent with the theoretical calculations thus validating the anisotropic critical state model for loss estimations in the superconducting pancake coil. © 2011 American Institute of Physics.

Graphene field-effect transistors as room-temperature terahertz detectors

The unique optoelectronic properties of graphene make it an ideal platform for a variety of photonic applications, including fast photodetectors, transparent electrodes in displays and photovoltaic modules, optical modulators, plasmonic devices, microcavities, and ultra-fast lasers. Owing to its high carrier mobility, gapless spectrum and frequency-independent absorption, graphene is a very promising material for the development of detectors and modulators operating in the terahertz region of the electromagnetic spectrum (wavelengths in the hundreds of micrometres), still severely lacking in terms of solid-state devices. Here we demonstrate terahertz detectors based on antenna-coupled graphene field-effect transistors. These exploit the nonlinear response to the oscillating radiation field at the gate electrode, with contributions of thermoelectric and photoconductive origin. We demonstrate room temperature operation at 0.3 THz, showing that our devices can already be used in realistic settings, enabling large-area, fast imaging of macroscopic samples. © 2012 Macmillan Publishers Limited. All rights reserved.

New ventilation efficiency measures based on buoyancy removal

New measures for estimating the efficiency of transient ventilation flows are proposed. These measures are developed by considering how effectively a ventilation system removes buoyancy from a space. This approach is distinct from standard efficiency measures which are, in general, based on the removal of a neutrally-buoyant passive tracer. Our new measures, based on (active) buoyancy removal, allow both the instantaneous and time-averaged efficiency of the entire space, or of any region within it, to be determined. In addition, expressions for determining vertical profiles of efficiency are proposed. These new measures enable the effectiveness of different flows to be compared directly and are applicable providing density (temperature) differences exist between the interior environment and the replacement air. Thus, they may be used to contrast the effectiveness of a broad range of building ventilation flows including natural, hybrid and forced ventilation.

Room temperature all-silicon photonic crystal nanocavity light emitting diode at sub-bandgap wavelengths

Silicon is now firmly established as a high performance photonic material. Its only weakness is the lack of a native electrically driven light emitter that operates CW at room temperature, exhibits a narrow linewidth in the technologically important 1300-1600 nm wavelength window, is small and operates with low power consumption. Here, an electrically pumped all-silicon nano light source around 1300-1600 nm range is demonstrated at room temperature. Using hydrogen plasma treatment, nano-scale optically active defects are introduced into silicon, which then feed the photonic crystal nanocavity to enhance the electrically driven emission in a device via Purcell effect. A narrow (Δλ=0.5 nm) emission line at 1515 nm wavelength with a power density of 0.4mW/cm2 is observed, which represents the highest spectral power density ever reported from any silicon emitter. A number of possible improvements are also discussed, that make this scheme a very promising light source for optical interconnects and other important silicon photonics applications. © 2012 by WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Subbandgap photoluminescence of Si photonic crystal nanocavity at room temperature

Using a photonic crystal cavity and a hydrogen plasma treatment, we enhance the photoluminescence (PL) from optically active defects in silicon by a factor of 3000 compared to the as-bought material at room temperature. © 2011 IEEE.