A vertically aligned carbon nanotube/fiber based electrode for economic hydrogen production by water electrolysis

Electrolysis is the most mature form of hydrogen production. Unfortunately, water electrolysis has not yet achieved the efficiency and the cost levels required for any practical application. In order to enhance the current density, modification of the electrolyte and the electrode morphology are the most popular approaches. Recently there have been numerous reports on how to improve the efficiency of hydrogen production by water splitting [1-3]. On the electrode side, the use of non-platinum high efficiency electrode materials for water splitting will provide a promising future for the hydrogen economy. An ideal electrode for water electrolysis should have good permeability to water and gas. It should also offer good electrical properties with a long life. A porous graphite plate, when coated with titania, for example, is known to provide a simple and economical electrode for water electrolysis [4]. © 2010 IEEE.

Low on-resistance SOI dual-trench-gate MOSFET

A low specific on-resistance (R-{{\rm on}, {\rm sp}}) integrable silicon-on-insulator (SOI) MOSFET is proposed, and its mechanism is investigated by simulation. The SOI MOSFET features double trenches and dual gates (DTDG SOI): an oxide trench in the drift region, a buried gate inset in the oxide trench, and another trench gate (TG) extended to a buried oxide layer. First, the dual gates form dual conduction channels, and the extended gate widens the vertical conduction area; both of which sharply reduce R-{{\rm on}, {\rm sp}}. Second, the oxide trench folds the drift region in the vertical direction, resulting in a reduced device pitch and R-{{\rm on}, {\rm sp}}. Third, the oxide trench causes multidirectional depletion. This not only enhances the reduced surface field effect and thus reshapes the electric field distribution but also increases the drift doping concentration, leading to a reduced R-{{\rm on}, {\rm sp}} and an improved breakdown voltage (BV). Compared with a conventional SOI lateral Double-diffused metal oxide semiconductor (LDMOS), the DTDG MOSFET increases BV from 39 to 92 V at the same cell pitch or decreases R-{{\rm on}, { \rm sp}} by 77% at the same BV by simulation. Finally, the TG extended synchronously acts as an isolation trench between the high/low-voltage regions in a high-voltage integrated circuit, saving the chip area and simplifying the isolation process. © 2006 IEEE.

Pixel-level tunable liquid crystal lenses for auto-stereoscopic display

Mobile video and gaming are now widely used, and delivery of a glass-free 3D experience is of both research and development interest. The key drawbacks of a conventional 3D display based on a static lenticular lenslet array and parallax barriers are low resolution, limited viewing angle and reduced brightness, mainly because of the need of multiple-pixels for each object point. This study describes the concept and performance of pixel-level cylindrical liquid crystal (LC) lenses, which are designed to steer light to the left and right eye sequentially to form stereo parallax. The width of the LC lenses can be as small as 20-30 μm, so that the associated auto-stereoscopic display will have the same resolution as the 2D display panel in use. Such a thin sheet of tunable LC lens array can be applied directly on existing mobile displays, and can deliver 3D viewing experience while maintaining 2D viewing capability. Transparent electrodes were laser patterned to achieve the single pixel lens resolution, and a high birefringent LC material was used to realise a large diffraction angle for a wide field of view. Simulation was carried out to model the intensity profile at the viewing plane and optimise the lens array based on the measured LC phase profile. The measured viewing angle and intensity profile were compared with the simulation results. © 2014 SPIE.