9 resultados para Wet chemical etching

em Cambridge University Engineering Department Publications Database


Relevância:

80.00% 80.00%

Publicador:

Resumo:

Poly-methylmethacrylate suspended dispersion was used to fabricate multiwalled carbon nanotube (MWCNT) bridges. Using this technique, nanotubes could be suspended between metal electrodes without any chemical etching of the substrate. The electrical measurement on suspended MWCNT bridges shows that the room temperature resistance ranges from under a kω to a few Mω.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

This work explored the use of industrial drop-on-demand inkjet printing for masking steel surfaces on engineering components, followed by chemical etching, to produce patterned surfaces. A solvent-based ink was printed on to mild steel samples and the influences of substrate topography and substrate temperature were investigated. Contact angle measurements were used to assess wettability. Regular patterns of circular spots (∼60 /on diameter) and more complex mask patterns were printed. Variation of the substrate temperature had negligible effect on the final size of the printed drops or on the resolution achieved. Colored optical interference fringes were observed on the dried ink deposits and correlated with film thickness measurements by whitelight interferometry.

Relevância:

80.00% 80.00%

Publicador:

Resumo:

Surface texturing has a great potential to improve tribological performance. First, possible texturing methods were identified and classified according to their physical principles. In sequence, some alternative texturing methods are presented. Some of them are already currently used either in industry or in laboratory, and innovations or simplifications are described for them. Others are innovative techniques. Some were explored only tentatively, where basic ideas and simple experimental investigations were developed to check their validity. Others were explored in more detail, so that their practical applicability could be identified. The first texturing method was photochemical texturing using a simple and cheap apparatus. Masking with inkjet printing before chemical etching was also successful to texture metallic samples. A new method involving electrochemical texturing, without the need to previously mask the samples to be textured have been studied in terms of voltage, current, mechanical configuration of the apparatus and electrolyte flushing. Another method aims to generate randomly distributed circular pockets on steel surfaces and involves dispersion of small acid droplets in oil. The final method involves the selective formation of hard areas on a steel surface by locallised diffusion, which should then develop into a texture during wear.

Relevância:

40.00% 40.00%

Publicador:

Resumo:

An improved technique for transferring large area graphene grown by chemical vapor deposition on copper is presented. It is based on mechanical separation of the graphene/copper by H2 bubbles during H2O electrolysis, which only takes a few tens of seconds while leaving the copper cathode intact. A semi-rigid plastic frame in combination with thin polymer layer span on graphene gives a convenient way of handling- and avoiding wrinkles and holes in graphene. Optical and electrical characterizations prove the graphene quality is better than that obtained by traditional wet etching transfer. This technique appears to be highly reproducible and cost efficient. © 2013 American Institute of Physics.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

A technique for pattern transfer onto carbon-diamond films deposited by radio-frequency plasma-enhanced chemical vapour deposition is reported. Such a technique involves standard photolithography processes and reactive ion etching by oxygen and is compatible with present day microelectronic technology. The patterns transferred are well defined with very good resolution. © 1992.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

A one-dimensional analytical model is developed for the steady state, axisymmetric, slender flow of saturated powder in a rotating perforated cone. Both the powder and the fluid spin with the cone with negligible slip in the hoop direction. They migrate up the wall of the cone along a generator under centrifugal force, which also forces the fluid out of the cone through the powder layer and the porous wall. The flow thus evolves from an over-saturated paste at inlet into a nearly dry powder at outlet. The powder is treated as a Mohr-Coulomb granular solid of constant void fraction and permeability. The shear traction at the wall is assumed to be velocity and pressure dependent. The fluid is treated as Newtonian viscous. The model provides the position of the colour line (the transition from over- to under-saturation) and the flow velocity and thickness profiles over the cone. Surface tension effects are assumed negligible compared to the centrifugal acceleration. Two alternative conditions are considered for the flow structure at inlet: fully settled powder at inlet, and progressive settling of an initially homogeneous slurry. The position of the colour line is found to be similar for these two cases over a wide range of operating conditions. Dominant dimensionless groups are identified which control the position of the colour line in a continuous conical centrifuge. Experimental observations of centrifuges used in the sugar industry provide preliminary validation of the model. © 2011 Elsevier Ltd.

Relevância:

30.00% 30.00%

Publicador:

Resumo:

Metal-catalyst-free chemical vapor deposition (CVD) of large area uniform nanocrystalline graphene on oxidized silicon substrates is demonstrated. The material grows slowly, allowing for thickness control down to monolayer graphene. The as-grown thin films are continuous with no observable pinholes, and are smooth and uniform across whole wafers, as inspected by optical-, scanning electron-, and atomic force microscopy. The sp 2 hybridized carbon structure is confirmed by Raman spectroscopy. Room temperature electrical measurements show ohmic behavior (sheet resistance similar to exfoliated graphene) and up to 13 of electric-field effect. The Hall mobility is ∼40 cm 2/Vs, which is an order of magnitude higher than previously reported values for nanocrystalline graphene. Transmission electron microscopy, Raman spectroscopy, and transport measurements indicate a graphene crystalline domain size ∼10 nm. The absence of transfer to another substrate allows avoidance of wrinkles, holes, and etching residues which are usually detrimental to device performance. This work provides a broader perspective of graphene CVD and shows a viable route toward applications involving transparent electrodes. © 2012 American Institute of Physics.